Method of forming semiconductor device
First Claim
Patent Images
1. A method of forming a semiconductor device, comprising:
- providing a substrate having a first area and a second area;
sequentially forming a target layer and a hard mask layer on the substrate in the first area and in the second area;
forming a plurality of transfer patterns in a spacer form on the hard mask layer in the first area;
forming a photoresist layer directly on the hard mask layer, wherein the photoresist layer covers the transfer patterns and the hard mask layer in the first area and in the second area;
removing the photoresist layer in the first area; and
patterning the hard mask layer by using the transfer patterns as a mask.
1 Assignment
0 Petitions
Accused Products
Abstract
A method of forming a semiconductor device is disclosed. A substrate having a first area and a second area is provided. A target layer and a hard mask layer are sequentially formed on the substrate in the first area and in the second area. Transfer patterns are formed in a spacer form on the hard mask layer in the first area. A photoresist layer is formed directly on the hard mask layer, and covers the transfer patterns and the hard mask layer in the first area and in the second area. The photoresist layer in the first area is removed. The hard mask layer is patterned by using the transfer patterns as a mask.
-
Citations
20 Claims
-
1. A method of forming a semiconductor device, comprising:
-
providing a substrate having a first area and a second area; sequentially forming a target layer and a hard mask layer on the substrate in the first area and in the second area; forming a plurality of transfer patterns in a spacer form on the hard mask layer in the first area; forming a photoresist layer directly on the hard mask layer, wherein the photoresist layer covers the transfer patterns and the hard mask layer in the first area and in the second area; removing the photoresist layer in the first area; and patterning the hard mask layer by using the transfer patterns as a mask. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
-
-
14. A method of forming a semiconductor device, comprising:
-
forming an opaque hard mask layer on a target layer; forming a plurality of separate transfer patterns on the hard mask layer, wherein the transfer patterns have slightly tilted sidewalls; coating a photoresist layer directly on the hard mask layer covering the transfer patterns; and performing an exposure step and a development step to the photoresist layer, so as to expose the transfer patterns, wherein the transfer patterns upon the development step have the same slightly tilted sidewalls. - View Dependent Claims (15, 16, 17, 18, 19, 20)
-
Specification