Methods of forming single and double diffusion breaks on integrated circuit products comprised of FinFET devices and the resulting products
First Claim
1. A method of forming a double diffusion break (DDB) isolation structure and a single diffusion break (SDB) isolation structure in a semiconductor substrate, comprising:
- forming a plurality of sacrificial gate structures above a plurality of fins defined in said semiconductor substrate;
forming a multi-layer patterned masking layer above said substrate, said multi-layer patterned masking layer comprising a first layer of material and a second layer of material positioned above said first layer of material and first and second openings that extend through both of said first and second layers of material, wherein said first opening is positioned above a first area of said substrate between a first and a second of said plurality of sacrificial gate structures where said DDB isolation structure will be formed and said second opening is positioned above a second area of said substrate under a third of said plurality of sacrificial gate structures where said SDB isolation structure will be formed;
performing at least one first process operation through said first opening in both said first and second layers of material to form said DDB break isolation structure in said substrate in said first area;
performing at least one second process operation to remove said second layer of material from above said first layer of material and to expose said first opening formed in said first layer of material; and
performing at least one third process operation through said second opening in said first layer of material to form said SDB isolation structure in said substrate in said second area.
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Abstract
One illustrative method disclosed herein includes, among other things, forming a multi-layer patterned masking layer comprised of first and second layers of material and first and second openings that extend through both of the first and second layers of material, wherein the first opening is positioned above a first area of the substrate where the DDB isolation structure will be formed and the second opening is positioned above a second area of the substrate where the SDB isolation structure will be formed. The method also includes performing a first process operation through the first opening to form the DDB isolation structure, performing a second process operation to remove the second layer of material and to expose the first opening in the first layer of material, and performing a third process operation through the second opening to form the SDB isolation structure.
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Citations
22 Claims
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1. A method of forming a double diffusion break (DDB) isolation structure and a single diffusion break (SDB) isolation structure in a semiconductor substrate, comprising:
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forming a plurality of sacrificial gate structures above a plurality of fins defined in said semiconductor substrate; forming a multi-layer patterned masking layer above said substrate, said multi-layer patterned masking layer comprising a first layer of material and a second layer of material positioned above said first layer of material and first and second openings that extend through both of said first and second layers of material, wherein said first opening is positioned above a first area of said substrate between a first and a second of said plurality of sacrificial gate structures where said DDB isolation structure will be formed and said second opening is positioned above a second area of said substrate under a third of said plurality of sacrificial gate structures where said SDB isolation structure will be formed; performing at least one first process operation through said first opening in both said first and second layers of material to form said DDB break isolation structure in said substrate in said first area; performing at least one second process operation to remove said second layer of material from above said first layer of material and to expose said first opening formed in said first layer of material; and performing at least one third process operation through said second opening in said first layer of material to form said SDB isolation structure in said substrate in said second area. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method of forming a double diffusion break (DDB) isolation structure and a single diffusion break (SDB) isolation structure in a semiconductor substrate, comprising:
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forming a plurality of sacrificial gate structures above a plurality of fins defined in said semiconductor substrate; forming a multi-layer patterned masking layer above said substrate, said multi-layer patterned masking layer comprising a first layer of material and a second layer of material positioned above said first layer of material and first and second openings that extend through said first and second layers of material, wherein said first opening is positioned above a first area of said substrate between a first and a second of said plurality of sacrificial gate structures where said DDB isolation structure will be formed and said second opening is positioned above a second area of said substrate under a third of said plurality of sacrificial gate structures where said SDB isolation structure will be formed; performing a conformal deposition process to form a conformal layer of material in said first and second openings, wherein said conformal layer of material substantially fills said second opening; performing an isotropic etching process to remove said conformal layer of material from within said first opening while leaving material of said conformal layer positioned within said second opening so as to block said second opening; with said second opening blocked, performing at least one first etching process through said first opening in both said first and second layers of material to define a double diffusion break trench in said substrate; performing at least one first process operation to form said DDB isolation structure in said double diffusion break trench; performing at least one second process operation to remove said second layer of material from above an upper surface of said first layer of material and to remove said material of said conformal layer positioned within said second opening in said first layer of material; performing at least one second etching process through said second opening in said first layer of material to define a single diffusion break trench in said substrate; and performing at least one third process operation to form said SDB isolation structure in said single diffusion break trench. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22)
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Specification