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Power semiconductor device

  • US 9,412,679 B1
  • Filed: 10/28/2015
  • Issued: 08/09/2016
  • Est. Priority Date: 03/16/2015
  • Status: Active Grant
First Claim
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1. A power semiconductor device, comprising:

  • a housing;

    at least one insulating substrate that is attached to said housing, has a radiating surface and a mounting surface opposite to said radiating surface, and has convex warpage in said radiating surface at ambient temperature, said mounting surface being housed in said housing, said insulating substrate includinga base portion that comprises metal and serves as said radiating surface,an insulating layer located on said base portion, anda circuit pattern that is located on said insulating layer and serves as said mounting surface;

    at least one power semiconductor element mounted on said circuit pattern of said insulating substrate;

    at least one wiring portion that connects said power semiconductor element and a portion of said circuit pattern of said insulating substrate remote from said power semiconductor element;

    a plurality of electrodes that are attached to said housing and are electrically connected with at least any one of said circuit pattern of said insulating substrate and said power semiconductor element;

    a sealing material that seals said power semiconductor element on said insulating substrate in said housing, said sealing material having a thickness greater than a thickness of said insulating substrate in a perpendicular direction to said mounting surface of said insulating substrate, said sealing material having a linear expansion coefficient greater than a linear expansion coefficient of said insulating substrate in an in-plane direction of said mounting surface of said insulating substrate; and

    a heat conduction layer that is located on said radiating surface and is solid at ambient temperature and is liquid at a temperature higher than or equal to a phase-change temperature higher than ambient temperature.

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