Method of manufacturing semiconductor package
First Claim
1. A method of manufacturing stacked semiconductor packages, the method comprising:
- preparing a wafer substrate comprising a first surface in which an active area is formed and a second surface that is opposite to the first surface;
forming a first through electrode extending by a predetermined length from the second surface toward the first surface;
trimming an edge of the second surface in predetermined intervals and by a predetermined thickness, thereby forming a trimmed wafer substrate surface;
forming a protection layer that covers the second surface and a first portion of the trimmed wafer substrate surface such that a second portion of the trimmed wafer substrate surface is exposed;
forming an adhesive layer on a wafer carrier;
attaching the wafer substrate and the protection layer on the adhesive layer such that the adhesive layer covers an upper surface and a side surface of the protection layer;
exposing an upper portion of the first through electrode by grinding the first surface;
stacking a plurality of semiconductor chips on the first surface, at least one of which is electrically connected to the first through electrode;
forming a molding element to cover the first surface of the wafer substrate and the plurality of semiconductor chips, wherein a diameter of the molding element is greater than a diameter of the wafer substrate and less than respective diameters of the protection layer and the adhesive layer; and
sequentially removing the wafer carrier and the adhesive layer.
1 Assignment
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Accused Products
Abstract
Embodiments of the inventive aspect include a method of manufacturing a semiconductor package including a plurality of stacked semiconductor chips in which edges of a semiconductor wafer substrate may be prevented from being damaged or cracked when the semiconductor package is manufactured at a wafer level, while a diameter of a molding element is greater than a diameter of the semiconductor wafer substrate. The molding element may cover a surface of the wafer substrate and the plurality of stacked semiconductor chips. Embodiments may include a wafer level semiconductor package including a circular substrate having a first diameter, a circular passivation layer attached to the circular substrate, the passivation layer having the first diameter, and a circular molding element covering surfaces of the plurality of semiconductor chips, and covering an active area of the substrate. The circular molding element may have a second diameter that is greater than the first diameter.
27 Citations
19 Claims
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1. A method of manufacturing stacked semiconductor packages, the method comprising:
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preparing a wafer substrate comprising a first surface in which an active area is formed and a second surface that is opposite to the first surface; forming a first through electrode extending by a predetermined length from the second surface toward the first surface; trimming an edge of the second surface in predetermined intervals and by a predetermined thickness, thereby forming a trimmed wafer substrate surface; forming a protection layer that covers the second surface and a first portion of the trimmed wafer substrate surface such that a second portion of the trimmed wafer substrate surface is exposed; forming an adhesive layer on a wafer carrier; attaching the wafer substrate and the protection layer on the adhesive layer such that the adhesive layer covers an upper surface and a side surface of the protection layer; exposing an upper portion of the first through electrode by grinding the first surface; stacking a plurality of semiconductor chips on the first surface, at least one of which is electrically connected to the first through electrode; forming a molding element to cover the first surface of the wafer substrate and the plurality of semiconductor chips, wherein a diameter of the molding element is greater than a diameter of the wafer substrate and less than respective diameters of the protection layer and the adhesive layer; and sequentially removing the wafer carrier and the adhesive layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of manufacturing a semiconductor package, the method comprising:
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forming a first semiconductor chip comprising a first surface on which an external access terminal is formed, and a first through electrode that penetrates at least a portion of an area between the first surface and a second surface that is opposite to the first surface; trimming an edge of the first surface in predetermined intervals and by a predetermined thickness; forming a first protection layer to cover a side surface of a trimmed edge of the first surface; forming a second protection layer to cover an exposed upper surface of the trimmed edge of the first surface and an upper surface and a side surface of the first protection layer; stacking a plurality of second semiconductor chips, at least one of which is connected to the first through electrode, on the second surface; forming a molding element such that upper surfaces and side surfaces of the plurality of second semiconductor chips are covered and the first and second protection layers are partially exposed; removing the second protection layer; trimming an edge of the first protection layer such that an edge of the molding element is partially exposed; and removing the first protection layer. - View Dependent Claims (12, 13, 14, 15)
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16. A wafer level semiconductor package, comprising:
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a circular substrate having a first diameter; a circular passivation layer attached to the circular substrate, the passivation layer having the first diameter; a plurality of access terminals arranged on the passivation layer; a plurality of first access pads each connected to a corresponding one of the access terminals; a plurality of first through electrodes each electrically connected to a corresponding one of the first access pads, the plurality of first through electrodes extending through the passivation layer and the substrate; a plurality of second access pads each electrically connected to a corresponding one of the first through electrodes; a plurality of first semiconductor chips each electrically connected to a corresponding one of the first through electrodes via a corresponding one of the second access pads; a plurality of second through electrodes each passing through a corresponding one of the plurality of first semiconductor chips; a plurality of second semiconductor chips each electrically connected to a corresponding one of the second through electrodes; and a circular molding element covering surfaces of the plurality of first semiconductor chips and the plurality of second semiconductor chips, and covering an active area of the substrate, the circular molding element having a second diameter that is greater than the first diameter. - View Dependent Claims (17, 18, 19)
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Specification