Structured substrate for LEDs with high light extraction
First Claim
1. A device for back-scattering of an incident light ray, comprising:
- a host substrate;
a structured layer comprising;
a first face which faces a front face of the host substrate,a second, flat, face provided on a light incident side of the device and which is parallel or substantially parallel to the first face, anda first material A and a second material B, which form, in a mixed plane, alternating surfaces which form random structured patterns with dimensions of these surfaces being between 350 nm and 600 nm, or of an order of the wavelength of the incident light along the mixed plane, wherein the mixed plane is between the first and second face of the structured layer, and the refractive index of the first and of the second material are different; and
a specific layer covering the structured layer such that a boundary between the specific layer and the structured layer is flat, the specific layer being made of a material C which is different from material A of the structured layer and also different from material B of the structured layer, wherein the specific layer is crystalline and semi-conductive, with a thickness of less than one micrometer, or less than 500 nm.
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Abstract
A device for back-scattering an incident light ray, including: a host substrate; a structured layer; a first face in contact with a front face of the host substrate; a second flat face parallel to the first face; a first material and a second material which form, in a mixed plane, alternating surfaces at least one of whose dimensions is between 300 nm and 800 nm, the mixed plane is between the first and second face of the structured layer; wherein the refractive index of the first and of the second material are different, the structured layer is covered by a specific layer, the specific layer is made of a material which is different from the first and second materials of the structured layer, and the specific layer is crystalline and semi-conductive.
16 Citations
27 Claims
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1. A device for back-scattering of an incident light ray, comprising:
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a host substrate; a structured layer comprising; a first face which faces a front face of the host substrate, a second, flat, face provided on a light incident side of the device and which is parallel or substantially parallel to the first face, and a first material A and a second material B, which form, in a mixed plane, alternating surfaces which form random structured patterns with dimensions of these surfaces being between 350 nm and 600 nm, or of an order of the wavelength of the incident light along the mixed plane, wherein the mixed plane is between the first and second face of the structured layer, and the refractive index of the first and of the second material are different; and a specific layer covering the structured layer such that a boundary between the specific layer and the structured layer is flat, the specific layer being made of a material C which is different from material A of the structured layer and also different from material B of the structured layer, wherein the specific layer is crystalline and semi-conductive, with a thickness of less than one micrometer, or less than 500 nm. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A method for manufacturing a device for back-scattering of an incident light, comprising:
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forming a host substrate; forming a structured layer comprising; a first face which faces a front face of the host substrate, a second, flat, face provided on a light incident side of the device and which is parallel or substantially parallel to the first face, and a first material A and a second material B, which form, in a mixed plane, alternating surfaces which form random structured patterns with dimensions of these surfaces being between 350 nm and 600 nm, or of an order of the wavelength of the incident light along the mixed plane, wherein the mixed plane is between the first and second face of the structured layer, and the refractive index of the first and of the second material are different; and a specific layer covering the structured layer such that a boundary between the specific layer and the structured layer is flat, the specific layer being made of a material C which is different from material A of the structured layer and also different from material B of the structured layer, wherein the specific layer is crystalline and semi-conductive, with a thickness of less than one micrometer, or less than 500 nm, the method comprising; a) formation of the structured layer such that the first face is in contact with the front face of a host substrate, where step a) comprises; a1) deposition of the first material A on said front face; a2) deposition of the second material B so that the first material A and the second material B form, in a mixed plane, said alternating surfaces; and b) transfer of said specific layer onto the second face of the structured layer. - View Dependent Claims (23, 24, 25)
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26. A manufacturing method for a light emitting device, comprising:
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forming a host substrate; forming a structured layer comprising; a first face which faces a front face of the host substrate, a second, flat, face provided on a light incident side of the device and which is parallel or substantially parallel to the first face, and a first material A and a second material B, which form, in a mixed plane, alternating surfaces which form random structured patterns with dimensions of these surfaces being between 350 nm and 600 nm, or of an order of the wavelength of the incident light along the mixed plane, wherein the mixed plane is between the first and second face of the structured layer, and the refractive index of the first and of the second material are different; and a specific layer covering the structured layer such that a boundary between the specific layer and the structured layer is flat, the specific layer being made of a material C which is different from material A of the structured layer and also different from material B of the structured layer, wherein the specific layer is crystalline and semi-conductive, with a thickness of less than one micrometer, or less than 500 nm, a device for back-scattering of an incident light ray, a multi-layer structure of LED type, comprising a first crystalline layer formed on the specific layer, wherein lattice parameters of the first layer and of the specific layer are close or identical, the method compising; formation by epitaxy of a first crystalline layer belonging to an LED-type multi-layer structure, on said specific layer belonging to said device for back-scattering of an incident light-ray. - View Dependent Claims (27)
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Specification