Hybrid waveguide lasers and methods for fabricating hybrid waveguide lasers

• US 9,413,139 B2
• Filed: 07/01/2014
• Issued: 08/09/2016
• Est. Priority Date: 07/01/2013
• Status: Active Grant

• Current Assignee: IMEC International, Universiteit Gent Vzw
• Original Assignee: IMEC International, Universiteit Gent Vzw
• Inventors: Van Thourhout, Dries, Wang, Zhechao, Van Campenhout, Joris, Pantouvaki, Maria Ioanna
• Primary Examiner(s): NIU, XINNING
• Application Number:
  US14/321,711
• Publication Number:
  US 20150333481A1
• Time in Patent Office: 770 Days
• US Class Current: 1/1
• CPC Class Codes: G02B 2006/12078 Gallium arsenide or alloys (GaAs, GaAlAs, GaAsP, GaInAs)
• CPC Class Codes: G02B 2006/12121 Laser
• CPC Class Codes: G02B 6/12004 Combinations of two or more optical elements
• CPC Class Codes: G02B 6/1228 Tapered waveguides, e.g. integrated spot-size transformers for coupling with fibres G02B6/305
• CPC Class Codes: H01S 2301/176 Specific passivation layers on surfaces other than the emission facet
• CPC Class Codes: H01S 5/0203 Etching
• CPC Class Codes: H01S 5/021 Silicon based substrates
• CPC Class Codes: H01S 5/02315 Support members, e.g. bases or carriers
• CPC Class Codes: H01S 5/0233 Mounting configuration of laser chips
• CPC Class Codes: H01S 5/0235 Method for mounting laser chips
• CPC Class Codes: H01S 5/026 Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers stabilisation of output H01S5/06
• CPC Class Codes: H01S 5/042 Electrical excitation ; Circuits therefor monolithically integrated laser drive components H01S5/0261
• CPC Class Codes: H01S 5/2027 Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes
• CPC Class Codes: H01S 5/2077 using lateral bandgap control during growth, e.g. selective growth, mask induced
• CPC Class Codes: H01S 5/2214 based on oxides or nitrides
• CPC Class Codes: H01S 5/2218 having special optical properties
• CPC Class Codes: H01S 5/2272 grown by a mask induced selective growth
• CPC Class Codes: H01S 5/3013 AIIIBV compounds

Abstract

The present disclosure relates to a method for integrating a sub-micron III-V waveguide laser on a semiconductor photonics platform as well as to a corresponding device/system. The method comprises providing on a semiconductor substrate an electrically insulating layer, etching a trench having a width in the range between 50 nm and 800 nm through the electrically insulating layer, thereby locally exposing the silicon substrate, providing a III-V layer stack in the trench by local epitaxial growth to form a channel waveguide, and providing a light confinement element for confining radiation in the local-epitaxial-grown channel waveguide.

Claims

1. A sub-micron III-V waveguide laser comprising:

a local-epitaxy-grown channel waveguide having a width in the range between 50 nm and 800 nm and a height in the range between 500 nm and 1200 nm, wherein the channel waveguide has a first lateral side and a second lateral side;

a lateral cladding layer adjacent to the first lateral side and the second lateral side of the channel waveguide; and

a light confinement element for confining light in the local-epitaxy-grown channel waveguide, wherein the light confinement element comprises an overlay covering the channel waveguide and containing a high refractive index material having a refractive index that is higher than a refractive index of the lateral cladding layer.

2. The sub-micron III-V waveguide laser according to claim 1, wherein the channel waveguide comprises a III-V layer stack including a lower cladding layer, an active region, and an upper cladding layer.

3. The sub-micron III-V waveguide laser according to claim 1, wherein the laser is integrated on a semiconductor photonics platform.

4. The submicron III-V waveguide laser according to claim 1, wherein the high refractive index material comprises amorphous silicon, polycrystalline silicon, or silicon nitride.

5. The submicron III-V waveguide laser according to claim 1, wherein the light confinement element comprises a plateau being provided in the lateral cladding layer at the first lateral side and at the second lateral side of the channel waveguide.

6. The submicron III-V waveguide laser according to claim 5, wherein the channel waveguide has a T-shaped cross section.

7. The submicron III-V waveguide laser according to claim 6, wherein the channel waveguide contains a first, narrow waveguide portion having a width in the range between 50 nm and 200 nm and a height in the range between 400 nm and 600 nm, and a second, wider waveguide portion overlaying the first waveguide portion, wherein the second waveguide portion has a width in the range between 500 nm and 800 nm and a height between 250 nm and about 600 nm.

8. The submicron III-V waveguide laser according to claim 2, further comprising a first metal comprising contact in electrical contact with the lower cladding layer and a second metal comprising contact in electrical contact with the upper cladding layer,. wherein the first metal comprising contact and the second metal comprising contact are configured for electrical injection of charge carriers in the active region of the channel waveguide.

9. The submicron III-V waveguide laser according to claim 1, wherein the laser is optically connected to an output waveguide.

14. The sub-micron III-V waveguide laser according to claim 1, wherein the channel waveguide comprises an active region having a first lateral side and a second lateral side, and wherein the overlay covers the first lateral side and the second lateral side of the active region.

15. The submicron III-V waveguide laser according to claim 1, wherein the channel waveguide has a width in the range between 500 nm and 800 nm.

16. The submicron III-V waveguide laser according to claim 9, wherein the output waveguide comprises a high refractive index material having a refractive index that is higher than a refractive index of the lateral cladding layer, wherein the output waveguide has a longitudinal axis substantially parallel to a longitudinal axis of the channel waveguide, and wherein the laser is coupled to the output waveguide by evanescent coupling.

10. A method for integrating a sub-micron III-V waveguide laser on a semiconductor photonics platform, the method comprising:

providing on a semiconductor substrate an electrically insulating layer;

etching a trench having a width in the range between 50 nm and 800 nm through the electrically insulating layer, thereby locally exposing the silicon substrate;

providing a III-V layer stack in the trench by local epitaxial growth to form a channel waveguide; and

providing a light confinement element for confining radiation in the local-epitaxial-grown channel waveguide, wherein providing the light confinement element includes providing an overlay, wherein the overlay is a layer overlaying the III-V layer stack and containing a high refractive index material having a refractive index that is higher than a refractive index of the electrically insulting layer.

11. The method according to claim 10 wherein the high refractive index material comprises amorphous silicon, polycrystalline silicon, or silicon nitride.

12. The method according to claim 10, wherein providing the light confinement element further includes etching a trench in the electrically insulating layer, wherein the trench has a plateau at both lateral sides of the trench such that, after providing the III-V layer stack in the trench, a channel waveguide having a T-shaped cross section is obtained, wherein the channel waveguide has a first, narrow waveguide portion with a width in the range between 50 nm and 200 nm and a height in the range between 400 nm and 600 nm, and a second, wider waveguide portion overlaying the first waveguide portion, wherein the second waveguide portion has a width in the range between 500 nm and 800 nm and a height between 250 nm and 600 nm.

13. The method according to claim 10, further comprising providing, for charge carrier injection in the channel waveguide, a first metal comprising contact and a second metal comprising contact.

17. The method according to claim 10, wherein the channel waveguide comprises an active region having a first lateral side and a second lateral side, and wherein the overlay covers the first lateral side and second lateral side of the active region.

18. The method according to claim 10, wherein the trench has a width in the range between 500 nm and 800 nm.

19. A sub-micron III-V waveguide laser comprising:

a local-epitaxy-grown channel waveguide having a width in the range between 50 nm and 800 nm and a height in the range between 500 nm and 1200 nm, wherein the channel waveguide has a first lateral side and a second lateral side;

a lateral cladding layer adjacent to the first lateral side and the second lateral side of the channel waveguide; and

a light confinement element for confining light in the local-epitaxy-grown channel waveguide, wherein the light confinement element comprises a plateau provided in the lateral cladding layer at the first lateral side and at the second lateral side of the channel waveguide.

20. The submicron III-V waveguide laser according to claim 19, wherein the channel waveguide has a T-shaped cross section, wherein the channel waveguide contains a first, narrow waveguide portion having a width in the range between 50 nm and 200 nm and a height in the range between 400 nm and 600 nm, and a second, wider waveguide portion overlaying the first waveguide portion, and wherein the second waveguide portion has a width in the range between 500 nm and 800 nm and a height between 250 nm and 600 nm.