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Substrate processing device equipped with semicircle shaped antenna

  • US 9,416,451 B2
  • Filed: 10/06/2011
  • Issued: 08/16/2016
  • Est. Priority Date: 10/06/2010
  • Status: Active Grant
First Claim
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1. A substrate processing apparatus comprising:

  • a chamber where processes with respect to a substrate are carried out;

    a substrate support on which the substrate is placed, the substrate support being disposed within the chamber;

    an antenna disposed in an upper portion of the chamber to form an electric field within the chamber; and

    a showerhead in which an inlet for supplying reaction gas into the chamber and an outlet for discharging the reaction gas supplied into the chamber are disposed in symmetry to each other,wherein the antenna comprises a first antenna and a second antenna, which are disposed in rotational symmetry with respect to a preset center,the first antenna comprises a first inner antenna and a first intermediate antenna which respectively have semi-circular shapes and first and second radii and are respectively disposed on one side and the other side with respect to the preset center line and a first connection antenna connecting the first inner antenna to the first intermediate antenna, andthe second antenna comprises a second intermediate antenna and a second inner antenna which respectively have semi-circular shapes and have first and second radii and are respectively disposed on one side and the other side with respect to the center line and a second connection antenna connecting the second intermediate antenna to the second inner antenna, andthe showerhead includesa plurality of diffusion passages vertically stacked apart from each other and connected to the inlet in order that the reaction gas flows along an inner space of the diffusion passages, each of the diffusion passages having a sectional area gradually increasing along a flow direction of the reaction gas thereby diffusing the reaction gas, andinflow connection passages connecting the diffusion passages such that all the diffusion passages are connected in series as a whole, whereby the supplied reaction gas flows into the chamber through all of the diffusion passages and the inflow connection passages.

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