Substrate processing device equipped with semicircle shaped antenna

• US 9,416,451 B2
• Filed: 10/06/2011
• Issued: 08/16/2016
• Est. Priority Date: 10/06/2010
• Status: Active Grant

• Current Assignee: Eugene Technology Co., Ltd.
• Original Assignee: Eugene Technology Co., Ltd.
• Inventors: Je, Sung Tae, Yang, Il Kwang, Song, Byung Gyu, Park, Song Hwan
• Primary Examiner(s): Baldwin, Gordon R
• Assistant Examiner(s): Javed, Mirza Israr
• Application Number:
  US13/822,434
• Publication Number:
  US 20130180453A1
• Time in Patent Office: 1,776 Days
• Field of Search: 118/715, 156/345.33, 156/34
• US Class Current: 1/1
• CPC Class Codes: C23C 16/4412 Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
• CPC Class Codes: C23C 16/45504 Laminar flow
• CPC Class Codes: C23C 16/45536 Use of plasma, radiation or electromagnetic fields
• CPC Class Codes: C23C 16/45563 Gas nozzles
• CPC Class Codes: C23C 16/50 using electric discharges generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34
• CPC Class Codes: C23C 16/507 using external electrodes, e.g. in tunnel type reactors
• CPC Class Codes: H01J 37/3211 Antennas, e.g. particular shapes of coils
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow
• CPC Class Codes: H01L 21/02617 Deposition types
• CPC Class Codes: H01L 21/32105 Oxidation of silicon-containing layers
• CPC Class Codes: H01L 21/3211 Nitridation of silicon-containing layers
• CPC Class Codes: H05H 1/46 using applied electromagnetic fields, e.g. high frequency or microwave energy H05H1/26 takes precedence
• CPC Class Codes: H05H 1/4652 using inductive coupling means, e.g. coils

Abstract

Provided is a substrate processing apparatus. The substrate processing apparatus includes a chamber where processes with respect to a substrate are carried out, a substrate support on which the substrate is placed, the substrate support being disposed within the chamber, and an antenna disposed in an upper portion of the chamber to form an electric field within the chamber. The antenna includes a first antenna and a second antenna, which are disposed in rotational symmetry with respect to a preset center. The first antenna includes a first inner antenna and a first intermediate antenna which respectively have semi-circular shapes and first and second radii and are respectively disposed on one side and the other side with respect to the preset center line and a first connection antenna connecting the first inner antenna to the first intermediate antenna. The second antenna includes a second intermediate antenna and a second inner antenna which respectively have semi-circular shapes and have first and second radii and are respectively disposed on one side and the other side with respect to the center line and a second connection antenna connecting the second intermediate antenna to the second inner antenna.

Claims

1. A substrate processing apparatus comprising:

a chamber where processes with respect to a substrate are carried out;

a substrate support on which the substrate is placed, the substrate support being disposed within the chamber;

an antenna disposed in an upper portion of the chamber to form an electric field within the chamber; and

a showerhead in which an inlet for supplying reaction gas into the chamber and an outlet for discharging the reaction gas supplied into the chamber are disposed in symmetry to each other,

wherein the antenna comprises a first antenna and a second antenna, which are disposed in rotational symmetry with respect to a preset center,

the first antenna comprises a first inner antenna and a first intermediate antenna which respectively have semi-circular shapes and first and second radii and are respectively disposed on one side and the other side with respect to the preset center line and a first connection antenna connecting the first inner antenna to the first intermediate antenna, and

the second antenna comprises a second intermediate antenna and a second inner antenna which respectively have semi-circular shapes and have first and second radii and are respectively disposed on one side and the other side with respect to the center line and a second connection antenna connecting the second intermediate antenna to the second inner antenna, and

the showerhead includes

a plurality of diffusion passages vertically stacked apart from each other and connected to the inlet in order that the reaction gas flows along an inner space of the diffusion passages, each of the diffusion passages having a sectional area gradually increasing along a flow direction of the reaction gas thereby diffusing the reaction gas, and

inflow connection passages connecting the diffusion passages such that all the diffusion passages are connected in series as a whole, whereby the supplied reaction gas flows into the chamber through all of the diffusion passages and the inflow connection passages.

2. The substrate processing apparatus of claim 1, wherein the first antenna further comprises a semicircular-type first outer antenna having a third radius and disposed on one side of the center line,

the second antenna further comprises a semicircular-type second outer antenna having the third radius and disposed on the other side of the center line,

the first intermediate antenna is disposed between the second inner antenna and the second outer antenna, and

the second intermediate antenna is disposed between the first inner antenna and the first outer antenna.

3. The substrate processing apparatus of claim 1, wherein the antenna has a flat shape on which the first and second antennae are flush with each other.

4. The substrate processing apparatus of claim 1, wherein the chamber comprises a lower chamber having an opened upper side, a chamber cover disposed under the antenna to open and close the upper side of the lower chamber, and an adjustment plate disposed between the antenna and the chamber cover to adjust the electric field formed within the chamber.

5. The substrate processing apparatus of claim 4, wherein a thickness of the adjustment plate is determined by a process rate within the chamber.

6. The substrate processing apparatus of claim 1, wherein the diffusion passages are vertically disposed.

7. The substrate processing apparatus of claim 1, wherein the showerhead comprises a plurality of convergent passages connected to the outlet and having a sectional area gradually decreasing along a flow direction of the reaction gas and outflow connection passages connecting the convergent passages in series to each other.