Large area deposition and doping of graphene, and products including the same

• US 9,418,770 B2
• Filed: 07/16/2013
• Issued: 08/16/2016
• Est. Priority Date: 08/07/2009
• Status: Active Grant

• Current Assignee: Guardian Glass LLC (KOCH Industries Incorporated)
• Original Assignee: Guardian Industries Corporation (KOCH Industries Incorporated)
• Inventors: Veerasamy, Vijayen S.
• Primary Examiner(s): MCCRACKEN, DANIEL
• Application Number:
  US13/942,726
• Publication Number:
  US 20130309475A1
• Time in Patent Office: 1,127 Days
• Field of Search: 423/448, 428/220
• US Class Current: 1/1
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: C01B 32/188 by epitaxial growth
• CPC Class Codes: C30B 29/02 Elements
• CPC Class Codes: C30B 31/02 by contacting with diffusion materials in the solid state
• CPC Class Codes: C30B 31/04 by contacting with diffusion materials in the liquid state
• CPC Class Codes: C30B 31/22 by ion-implantation
• CPC Class Codes: H01B 1/04 mainly consisting of carbon-silicon compounds, carbon or silicon

Abstract

Certain example embodiments of this invention relate to the use of graphene as a transparent conductive coating (TCC). In certain example embodiments, graphene thin films grown on large areas hetero-epitaxially, e.g., on a catalyst thin film, from a hydrocarbon gas (such as, for example, C₂H₂, CH₄, or the like). The graphene thin films of certain example embodiments may be doped or undoped. In certain example embodiments, graphene thin films, once formed, may be lifted off of their carrier substrates and transferred to receiving substrates, e.g., for inclusion in an intermediate or final product. Graphene grown, lifted, and transferred in this way may exhibit low sheet resistances (e.g., less than 150 ohms/square and lower when doped) and high transmission values (e.g., at least in the visible and infrared spectra).

Claims

1. A doped graphene thin film structure including a graphene thin film and a metal catalyst thin film, the doped graphene thin film structure comprising:

the doped graphene thin film directly or indirectly on the metal catalyst thin film having a substantially single-orientation large-grain crystal structure,

wherein the graphene thin film is 1-10 atomic layers thick, and

wherein the doped graphene thin film has a sheet resistance less than 150 ohms/square.

2. The doped graphene thin film structure of claim 1, wherein the doped graphene thin film includes n-type dopants.

3. The doped graphene thin film structure of claim 1, wherein the doped graphene thin film includes p-type dopants.

4. The doped graphene thin film structure of claim 1, wherein the doped graphene thin film is doped with any one or more of:

nitrogen, boron, phosphorous, fluorine, lithium, potassium, and sulfur.

5. The doped graphene thin film structure of claim 1, wherein the doped graphene thin film has a sheet resistance of 10-20 ohms/square.