×

Methods for bonding semiconductor wafers

  • US 9,418,830 B2
  • Filed: 06/27/2014
  • Issued: 08/16/2016
  • Est. Priority Date: 06/27/2014
  • Status: Active Grant
First Claim
Patent Images

1. A method of bonding, in a chamber, a cap wafer to a device wafer, comprising:

  • heating the device wafer and the cap wafer in the chamber;

    cooling the device wafer and the cap wafer in the chamber;

    pressurizing the chamber by introducing gas into the chamber to accelerate a rate of one of a group consisting of the heating and the cooling;

    applying pressure to the device wafer and the cap wafer while a bond is formed between the device wafer and the cap wafer, andafter the cooling, raising a temperature of the chamber to enhance forming the bond, wherein the bond is a eutectic bond.

View all claims
  • 17 Assignments
Timeline View
Assignment View
    ×
    ×