Methods for bonding semiconductor wafers
First Claim
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1. A method of bonding, in a chamber, a cap wafer to a device wafer, comprising:
- heating the device wafer and the cap wafer in the chamber;
cooling the device wafer and the cap wafer in the chamber;
pressurizing the chamber by introducing gas into the chamber to accelerate a rate of one of a group consisting of the heating and the cooling;
applying pressure to the device wafer and the cap wafer while a bond is formed between the device wafer and the cap wafer, andafter the cooling, raising a temperature of the chamber to enhance forming the bond, wherein the bond is a eutectic bond.
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Abstract
A method of bonding a cap wafer to a device wafer includes heating the device wafer and the cap wafer in the chamber, cooling the device wafer and the cap wafer in the chamber, pressurizing the chamber, introducing gas into the chamber while the chamber is pressurized to accelerate a rate of one of a group consisting of the heating and the cooling, and applying pressure to the device wafer and the cap wafer while a bond is formed between the device wafer and the cap wafer.
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Citations
15 Claims
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1. A method of bonding, in a chamber, a cap wafer to a device wafer, comprising:
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heating the device wafer and the cap wafer in the chamber; cooling the device wafer and the cap wafer in the chamber; pressurizing the chamber by introducing gas into the chamber to accelerate a rate of one of a group consisting of the heating and the cooling; applying pressure to the device wafer and the cap wafer while a bond is formed between the device wafer and the cap wafer, and after the cooling, raising a temperature of the chamber to enhance forming the bond, wherein the bond is a eutectic bond. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method of bonding, in a chamber, a cap wafer that is paired with a device wafer spaced apart by a plurality of spacers, comprising:
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pressurizing the chamber and heating the chamber to induce outgassing from the cap wafer and the device wafer; evacuating the chamber to remove residual absorbed gases resulting from the outgassing; pressurizing the chamber and cooling the cap wafer and the device wafer; removing the plurality of spacers; and forming a bond between the cap wafer and the device wafer. - View Dependent Claims (14, 15)
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Specification