Semiconductor component having through-silicon vias and method of manufacture
First Claim
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1. A semiconductor component comprising:
- a semiconductor substrate having an opening, wherein the opening has a top portion and a bottom portion;
a first dielectric liner disposed over an interior surface of the opening, the first dielectric liner having a thickness T1 on the top portion and a thickness T2 on the bottom portion, wherein R1 is a ratio of T1 to T2;
a second dielectric liner disposed over the first dielectric liner, the second dielectric liner having a thickness T3 on the top portion and a thickness T4 on the bottom portion, wherein R2 is a ratio of T3 to T4, and R1 is greater than R2; and
a conductive material disposed over the second dielectric liner.
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Abstract
A semiconductor component includes a semiconductor substrate having an opening A first dielectric liner having a first compressive stress is disposed in the opening. A second dielectric liner having a tensile stress is disposed on the first dielectric liner. A third dielectric liner having a second compressive stress disposed on the second dielectric liner.
69 Citations
7 Claims
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1. A semiconductor component comprising:
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a semiconductor substrate having an opening, wherein the opening has a top portion and a bottom portion; a first dielectric liner disposed over an interior surface of the opening, the first dielectric liner having a thickness T1 on the top portion and a thickness T2 on the bottom portion, wherein R1 is a ratio of T1 to T2; a second dielectric liner disposed over the first dielectric liner, the second dielectric liner having a thickness T3 on the top portion and a thickness T4 on the bottom portion, wherein R2 is a ratio of T3 to T4, and R1 is greater than R2; and a conductive material disposed over the second dielectric liner. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Specification