Semiconductor package and method of manufacturing the same

• US 9,418,943 B2
• Filed: 06/15/2015
• Issued: 08/16/2016
• Est. Priority Date: 09/17/2014
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Kim, Yeongseok
• Primary Examiner(s): Thai, Luan C
• Application Number:
  US14/739,060
• Publication Number:
  US 20160079178A1
• Time in Patent Office: 428 Days
• Field of Search: 257/773
• US Class Current: 1/1
• CPC Class Codes: H01L 21/4853 Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
• CPC Class Codes: H01L 21/565 Moulds
• CPC Class Codes: H01L 2223/54433 containing identification or tracking information
• CPC Class Codes: H01L 2223/54486 Located on package parts, e.g. encapsulation, leads, package substrate
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48472 the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
• CPC Class Codes: H01L 2224/73204 the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 23/3114 the device being a chip scale package, e.g. CSP
• CPC Class Codes: H01L 23/3121 a substrate forming part of the encapsulation
• CPC Class Codes: H01L 23/49811 Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads H01L23/49827 takes precedence
• CPC Class Codes: H01L 23/544 Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps test patterns for characterising or monitoring manufacturing processes H01L22/00
• CPC Class Codes: H01L 23/564 Details not otherwise provided for, e.g. protection against moisture getters H01L23/26
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/181 Encapsulation

Abstract

A semiconductor package including a marking film and a method of fabricating the same are provided wherein a marking film including a thermoreactive layer may be applied to a molding layer to protect a semiconductor chip under the molding layer and to efficiently perform a marking process. The thickness of the molding layer may thereby be reduced so the entire thickness of the semiconductor package may be reduced. Also, it is possible to prevent warpage of the semiconductor package through the marking film, provide the surface of the semiconductor package with gloss and freely adjust the color of the surface of the semiconductor package.

Claims

1. A semiconductor package comprising:

a package substrate on which a semiconductor chip is mounted;

a molding layer that covers the package substrate and molds the semiconductor chip; and

a marking film disposed on the molding layer, wherein the marking film comprises a thermoreactive layer that reacts to an electromagnetic wave;

wherein the thermoreactive layer comprises both thermoreactive material and reflector material;

the thermoreactive material includes a discoloration material and/or a carbonization material, and the thermoreactive material has a crystal structure comprising first crystal grains; and

,

the reflector material reflects the electromagnetic wave and has a crystal structure comprising second crystal grains, and the second crystal grains are dispersed in a space between the first crystal grains.

2. The semiconductor package of claim 1, wherein:

the electromagnetic wave comprises a laser, an ultraviolet ray or a combination of the laser and the ultraviolet ray;

the discoloration material is discolored by reaction with the electromagnetic wave and is selected from the group consisting of thermochromic material, photochromic material, ionochromic material, electrochromic material, solvatochromic material, piezochromic material, gasochromic material, vapochromic material and chronochromic material; and

the carbonization material is selected from a carbonizable polymer group and is carbonized by reaction with the electromagnetic wave.

3. The semiconductor package of claim 2, wherein the thermoreactive material includes a discoloration material selected from a thermochromic material or a photochromic material that comprises a leuco dye.

4. The semiconductor package of claim 1, wherein the thermoreactive layer further comprises reinforcement material enhancing the strength of the marking film.

5. The semiconductor package of claim 1, wherein a thickness of the marking film is about 5 μ

m to about 40 μ

m.

6. The semiconductor package of claim 1, further comprising one or more wires electrically connecting the semiconductor chip to the package substrate, wherein the molding layer covers the semiconductor chip and the wires, and wherein a distance between a top surface of the molding layer and a top surface of the semiconductor chip is about 50 μ

m to about 150 μ

m.

7. The semiconductor package of claim 1, further comprising connection members interposed between the semiconductor chip and the package substrate to electrically connect the semiconductor chip to the package substrate, wherein the molding layer covers the semiconductor chip and the connection members, and wherein a distance between a top surface of the molding layer and a top surface of the semiconductor chip is about 1 μ

m to about 40 μ

m.

8. A semiconductor package comprising:

a package substrate on which a semiconductor chip is mounted;

a molding layer that covers the package substrate and molds the semiconductor chip; and

a marking film disposed on the molding layer, wherein the marking film comprises a thermoreactive layer that reacts to an electromagnetic wave and reflectors consisting of reflector material that reflects the electromagnetic wave;

wherein the thermoreactive layer is substantially free of carbonization material and comprises a discoloration material that is discolored by reaction with the electromagnetic wave and is selected from the group consisting of thermochromic material, photochromic material, ionochromic material, electrochromic material, solvatochromic material, piezochromic material, gasochromic material, vapochromic material and chronochromic material.

9. The semiconductor package of claim 8 wherein the reflectors are in a reflection layer between the thermoreactive layer of the marking film and the molding layer.

10. The semiconductor package of claim 9 wherein the reflection layer further comprises an adhesive material.

11. The semiconductor package of claim 8 wherein the reflectors are included in the thermoreactive layer of the marking film.

12. The semiconductor package of claim 8 wherein the reflector material is selected from the group consisting of Sb₂O₃, BaSO₄, (PbCO₃)₂.Pb(OH)₂, TiO₂, ZnO, ZnS, Al₂O₃, SiO₂ or mixtures thereof.

13. The semiconductor package of claim 8 wherein the discoloration material is selected from a thermochromic material or a photochromic material that comprises a leuco dye.

14. The semiconductor package of claim 8 wherein the discoloration material is selected from:

an ionochromic material that includes at least one material selected from the group consisting of phthalides, leucotriarylmethanes, azo dyes, styryl dyes, chelates, crown ethers, sulfones, mono- and di-vinylphthalides, and lactams;

an electrochromic material that includes tungsten trioxide or molybdenum trioxide;

a solvatochromic material that includes pyridinium phenol betaine;

a piezochromic material that includes cholesterol ester;

a gasochromic material that includes at least one materials selected from the group consisting of tungsten oxide, tungstate, nioboxide, molybden oxide, molybtate, nickel oxide, titanium oxide, banadium oxide, iridium oxide, manganese oxide and cobalt oxide; and

a vapochromic material that includes tetra-alkyl metallo porphyrins with para substituents.