Fin field effect transistor (FinFET) device structure
First Claim
1. A fin field effect transistor (FinFET) device structure, comprising:
- a substrate, wherein the substrate comprises a first region and a second region;
an isolation structure formed on the substrate;
first fin structures formed on the first region,second fin structures formed on the second region, wherein the number of the first fin structures is greater than the number of the second fin structures; and
remaining fin structures formed on the second region, wherein the remaining fin structures are completely covered by the isolation structure;
wherein the first fin structures have a first height which is measured from a top surface of the isolation structure to a top surface of the first fin structures;
the second fin structures have a second height which is measured from a top surface of the isolation structure to a top surface of the second fin structures, anda gap between the first height and the second height is in a range from about 0.4 nm to about 4 nm.
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Abstract
A fin field device structure and method for forming the same are provided. The FinFET device structure includes a substrate, and the substrate includes a first region and a second region. The FinFET device structure includes an isolation structure formed on the substrate and first fin structures formed on the first region. The FinFET device structure also includes second fin structures formed on the second region, and the number of the first fin structures is greater than the number of the second fin structures. The first fin structures have a first height, the second fin structures have a second height, and a gap between the first height and the second height is in a range from about 0.4 nm to about 4 nm.
68 Citations
19 Claims
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1. A fin field effect transistor (FinFET) device structure, comprising:
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a substrate, wherein the substrate comprises a first region and a second region; an isolation structure formed on the substrate; first fin structures formed on the first region, second fin structures formed on the second region, wherein the number of the first fin structures is greater than the number of the second fin structures; and remaining fin structures formed on the second region, wherein the remaining fin structures are completely covered by the isolation structure; wherein the first fin structures have a first height which is measured from a top surface of the isolation structure to a top surface of the first fin structures; the second fin structures have a second height which is measured from a top surface of the isolation structure to a top surface of the second fin structures, and a gap between the first height and the second height is in a range from about 0.4 nm to about 4 nm. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A fin field effect transistor (FinFET) device structure, comprising:
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a substrate, wherein the substrate comprises a first region and a second region; first fin structures formed on the substrate in the first region; second fin structures formed on the substrate in the second region; remaining fin structures formed on the second region, wherein the remaining fin structures are covered by the isolation structure; and an isolation structure formed on the substrate, wherein the isolation structures comprise a first portion located between two adjacent first fin structures and a second portion located between two adjacent second fin structures, and wherein a gap between a top surface of the first portion and a top surface of the second portion is in a range from about 0.4 nm to about 4 nm. - View Dependent Claims (9, 10, 11)
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12. A method for forming a fin field effect transistor (FinFET) device structure, comprising:
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providing a substrate, wherein the substrate has a first region and a second region; forming the first fin structures and the second fin structures on the first region and the second region, respectively, wherein the number of the first fin structures is greater than the number of the second fin structure; forming a sacrificial layer on the first fin structures and the second fin structures, wherein a first thickness which is measured from a top surface of the first fin structures to a top surface of the sacrificial layer, and wherein the first thickness is in a range from about 10 nm to about 50 nm; and performing an etching process to the sacrificial layer to form an isolation structure on the substrate, wherein the first fin structures have a first height which is measured from a top surface of the isolation structure to a top surface of the first fin structures, the second fin structures have a second height which is measured from a top surface of the isolation structure to a top surface of the second fin structures, and a gap between the first height and the second height is in a range from about 0.4 nm to about 4 nm. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19)
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Specification