Analog circuit and semiconductor device
First Claim
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1. A semiconductor device comprising:
- a first transistor, the first transistor comprising an oxide semiconductor in a channel region;
a second transistor, the second transistor comprising;
a gate over a substrate;
a gate insulating layer over the gate;
an oxide semiconductor layer over the gate insulating layer, wherein the oxide semiconductor layer and the gate are overlapped with each other;
an oxide insulating layer over the oxide semiconductor layer, wherein the oxide insulating layer and the gate are overlapped with each other; and
a source and a drain over the oxide insulating layer,a third transistor;
a capacitor;
a light-emitting element;
a first line; and
a second line,wherein one of a source and a drain of the first transistor is electrically connected to the first line,wherein the other one of the source and the drain of the first transistor is electrically connected to the gate of the second transistor and one terminal of the capacitor,wherein the other one terminal of the capacitor is electrically connected to one of the source and the drain of the second transistor, one of a source and a drain of the third transistor, and the light-emitting element,wherein the other one of the source and the drain of the second transistor is electrically connected to the second line,wherein the oxide semiconductor layer comprises In, Ga, and Zn, andwherein a gate of the first transistor is not directly connected to a gate of the third transistor.
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Abstract
An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×1019 atoms/cm3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.
170 Citations
23 Claims
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1. A semiconductor device comprising:
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a first transistor, the first transistor comprising an oxide semiconductor in a channel region; a second transistor, the second transistor comprising; a gate over a substrate; a gate insulating layer over the gate; an oxide semiconductor layer over the gate insulating layer, wherein the oxide semiconductor layer and the gate are overlapped with each other; an oxide insulating layer over the oxide semiconductor layer, wherein the oxide insulating layer and the gate are overlapped with each other; and a source and a drain over the oxide insulating layer, a third transistor; a capacitor; a light-emitting element; a first line; and a second line, wherein one of a source and a drain of the first transistor is electrically connected to the first line, wherein the other one of the source and the drain of the first transistor is electrically connected to the gate of the second transistor and one terminal of the capacitor, wherein the other one terminal of the capacitor is electrically connected to one of the source and the drain of the second transistor, one of a source and a drain of the third transistor, and the light-emitting element, wherein the other one of the source and the drain of the second transistor is electrically connected to the second line, wherein the oxide semiconductor layer comprises In, Ga, and Zn, and wherein a gate of the first transistor is not directly connected to a gate of the third transistor. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device comprising:
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a first transistor; a second transistor, the second transistor comprising; a gate over a substrate; a gate insulating layer over the gate; an oxide semiconductor layer over the gate insulating layer, wherein the oxide semiconductor layer and the gate are overlapped with each other; an oxide insulating layer over the oxide semiconductor layer, wherein the oxide insulating layer and the gate are overlapped with each other; and a source and a drain over the oxide insulating layer, a third transistor; a capacitor; a light-emitting element; a first line; and a second line, wherein one of a source and a drain of the first transistor is electrically connected to the first line, wherein the other one of the source and the drain of the first transistor is electrically connected to the gate of the second transistor and one terminal of the capacitor, wherein the other one terminal of the capacitor is electrically connected to one of the source and the drain of the second transistor, one of a source and a drain of the third transistor, and the light-emitting element, wherein the other one of the source and the drain of the second transistor is electrically connected to the second line, wherein the oxide semiconductor layer comprises In, Ga, and Zn, and wherein a gate of the first transistor is not directly connected to a gate of the third transistor. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A semiconductor device comprising:
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a first transistor, the first transistor comprising an oxide semiconductor in a channel region; a second transistor, the second transistor comprising; a first gate over a substrate; a first gate insulating layer over the first gate; an oxide semiconductor layer over the first gate insulating layer; a source and a drain over the oxide semiconductor layer; a second gate insulating layer over the source and the drain; and a second gate over the second gate insulating layer, a third transistor; a capacitor; a light-emitting element; a first line; and a second line, wherein one of a source and a drain of the first transistor is electrically connected to the first line, wherein the other one of the source and the drain of the first transistor is electrically connected to the first gate of the second transistor and one terminal of the capacitor, wherein the other one terminal of the capacitor is electrically connected to one of the source and the drain of the second transistor, one of a source and a drain of the third transistor, and the light-emitting element, wherein the other one of the source and the drain of the second transistor is electrically connected to the second line, wherein the oxide semiconductor layer comprises In, Ga, and Zn, wherein a potential of the second gate is same as a potential of the first gate, and wherein a gate of the first transistor is not directly connected to a gate of the third transistor. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23)
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Specification