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Analog circuit and semiconductor device

  • US 9,419,020 B2
  • Filed: 07/24/2014
  • Issued: 08/16/2016
  • Est. Priority Date: 10/21/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first transistor, the first transistor comprising an oxide semiconductor in a channel region;

    a second transistor, the second transistor comprising;

    a gate over a substrate;

    a gate insulating layer over the gate;

    an oxide semiconductor layer over the gate insulating layer, wherein the oxide semiconductor layer and the gate are overlapped with each other;

    an oxide insulating layer over the oxide semiconductor layer, wherein the oxide insulating layer and the gate are overlapped with each other; and

    a source and a drain over the oxide insulating layer,a third transistor;

    a capacitor;

    a light-emitting element;

    a first line; and

    a second line,wherein one of a source and a drain of the first transistor is electrically connected to the first line,wherein the other one of the source and the drain of the first transistor is electrically connected to the gate of the second transistor and one terminal of the capacitor,wherein the other one terminal of the capacitor is electrically connected to one of the source and the drain of the second transistor, one of a source and a drain of the third transistor, and the light-emitting element,wherein the other one of the source and the drain of the second transistor is electrically connected to the second line,wherein the oxide semiconductor layer comprises In, Ga, and Zn, andwherein a gate of the first transistor is not directly connected to a gate of the third transistor.

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