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Lateral devices containing permanent charge

  • US 9,419,085 B2
  • Filed: 11/09/2015
  • Issued: 08/16/2016
  • Est. Priority Date: 07/30/2008
  • Status: Active Grant
First Claim
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1. A lateral semiconductor device, comprising:

  • a first-conductivity-type source region;

    a second-conductivity-type body region, interposed between said source region and a first-conductivity-type drift region, said body region being capacitively coupled to a gate electrode lying at least partially in a trench;

    a first-conductivity-type drain region;

    permanent charge embedded in an insulating region which vertically adjoins said drift region, said permanent charge having a polarity which tends to deplete adjacent semiconductor material;

    wherein said gate electrode is separated from the adjacent semiconductor material by a layer of gate oxide; and

    wherein the gate oxide adjacent to said drift region is thicker than the gate oxide adjacent to said body region.

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