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Diodes and methods of manufacturing diodes

  • US 9,419,116 B2
  • Filed: 10/21/2015
  • Issued: 08/16/2016
  • Est. Priority Date: 01/22/2014
  • Status: Active Grant
First Claim
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1. A diode, comprising:

  • a cathode assembly including;

    a cathode electrode,a N+ substrate layer on the cathode electrode,a N buffer layer on the N+ substrate layer, anda N−

    bulk layer on the N buffer layer, wherein the N buffer layer is disposed between the N+ substrate layer and the N−

    bulk layer, and the N buffer layer includes at least one damaged sublayer having crystal damage configured to provide recombination centers for charge carriers and at least one undamaged sublayer; and

    an anode assembly adjacent to the N−

    bulk layer.

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