Diode for a printable composition

• US 9,419,179 B2
• Filed: 08/07/2015
• Issued: 08/16/2016
• Est. Priority Date: 05/31/2007
• Status: Expired due to Term

• Current Assignee: NthDegree Technologies Worldwide Inc.
• Original Assignee: NthDegree Technologies Worldwide Inc.
• Inventors: Lowenthal, Mark David, Ray, William Johnstone, Shotton, Neil O., Blanchard, Richard A., Oraw, Brad
• Primary Examiner(s): Patel, Vip
• Application Number:
  US14/821,452
• Publication Number:
  US 20150349206A1
• Time in Patent Office: 375 Days
• Field of Search: 313/506, 313/498, 313/509, 313/512
• US Class Current: 1/1
• CPC Class Codes: H01L 31/022408 for devices characterised by at least one potential jump barrier or surface barrier
• CPC Class Codes: H01L 31/028 including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 31/0304 including, apart from doping materials or other impurities, only AIIIBV compounds
• CPC Class Codes: H01L 31/035281 Shape of the body
• CPC Class Codes: H01L 31/048 Encapsulation of modules
• CPC Class Codes: H01L 31/18 Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H10K 2102/351 Thickness
• CPC Class Codes: H10K 30/80 Constructional details
• CPC Class Codes: H10K 30/81 Electrodes
• CPC Class Codes: H10K 50/80 Constructional details
• CPC Class Codes: H10K 50/81 Anodes
• CPC Class Codes: H10K 50/82 Cathodes
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: H10K 85/111 comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
• CPC Class Codes: H10K 85/114 Poly-phenylenevinylene; Derivatives thereof
• CPC Class Codes: H10K 85/115 Polyfluorene; Derivatives thereof
• CPC Class Codes: H10K 85/141 comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
• CPC Class Codes: H10K 85/143 : Polyacetylene; Derivatives thereof
• CPC Class Codes: H10K 85/151 : Copolymers
• CPC Class Codes: Y02E 10/50 : Photovoltaic [PV] energy
• CPC Class Codes: Y02E 10/549 : Organic PV cells

Abstract

An exemplary printable composition of a liquid or gel suspension of diodes comprises a plurality of diodes, a first solvent and/or a viscosity modifier. An exemplary diode comprises: a light emitting or absorbing region having a diameter between about 20 and 30 microns and a height between 2.5 to 7 microns; a plurality of first terminals spaced apart and coupled to the light emitting region peripherally on a first side, each first terminal of the plurality of first terminals having a height between about 0.5 to 2 microns; and one second terminal coupled centrally to a mesa region of the light emitting region on the first side, the second terminal having a height between 1 to 8 microns.

Claims

1. A diode comprising:

a light emitting or absorbing region;

at least one first terminal coupled to the light emitting or absorbing region on a first side; and

a second terminal coupled to the light emitting or absorbing region on the first side, a contact of the second terminal being spaced apart from a contact of the at least one first terminal by about 1 to 7 microns in height;

wherein the diode is less than about 50 microns in any dimension.

2. The diode of claim 1, wherein:

the light emitting or absorbing region further comprises a mesa region;

the at least one first terminal is located peripherally to the mesa region on the light emitting or absorbing region; and

the second terminal is coupled centrally to the mesa region of the light emitting or absorbing region.

3. The diode of claim 1, wherein the light emitting or absorbing region has a lateral dimension less than about 50 microns and a height less than about 7 microns.

4. The diode of claim 1, wherein:

the light emitting or absorbing region further comprises a mesa region; and

the at least one first terminal further comprises a plurality of first terminals, the plurality of first terminals spaced apart from each other and coupled to the light emitting or absorbing region peripherally to the mesa region on the first side.

5. The diode of claim 4, wherein, wherein each first terminal of the plurality of first terminals comprises via metal, has a height less than about 2 microns and has a width or length less than about 11 microns.

6. The diode of claim 1, wherein the second terminal has a height between about 1 to 8 microns.

7. The diode of claim 1, wherein the light emitting or absorbing region further comprises a mesa region having a height of 0.5 to 2 microns and a lateral dimension less than about 50 microns.

8. The diode of claim 1, wherein the diode has a lateral dimension between about 10 to 50 microns and a height between about 5 to 25 microns.

9. The diode of claim 1, wherein the diode is substantially hexagonal laterally, has a lateral dimension between about 10 to 50 microns measured opposing face-to-face, a height between about 5 to 25 microns, and wherein each lateral side of the diode has a substantially sigmoidal curvature and terminates in a curved point.

10. The diode of claim 1, wherein the light emitting or absorbing region of the diode has a shape selected from the group consisting of:

substantially hexagonal, substantially square, substantially triangular, substantially rectangular, substantially lobed, substantially stellate, substantially toroidal, and combinations thereof.

11. The diode of claim 1, wherein the light emitting or absorbing region of the diode has a surface texture selected from the group consisting of:

a plurality of circular rings, a plurality of substantially curvilinear trapezoids, a plurality of parallel stripes, a stellate pattern, and combinations thereof.

12. The diode of claim 1, wherein the diode comprises at least one inorganic semiconductor selected from the group consisting of:

silicon, gallium arsenide (GaAs), gallium nitride (GaN), GaP, InAlGaP, AlInGaAs, InGaNAs, AlInGaSb, and combinations thereof.

13. The diode of claim 1, wherein the diode comprises at least one organic semiconductor selected from the group consisting of:

π

-conjugated polymers, poly(acetylene)s, poly(pyrrole)s, poly(thiophene)s, polyanilines, polythiophenes, poly(p-phenylene sulfide), poly(para-phenylene vinylene)s (PPV) and PPV derivatives, poly(3-alkylthiophenes), polyindole, polypyrene, polycarbazole, polyazulene, polyazepine, poly(fluorene)s, polynaphthalene, polyaniline, polyaniline derivatives, polythiophene, polythiophene derivatives, polypyrrole, polypyrrole derivatives, polythianaphthene, polythianaphthane derivatives, polyparaphenylene, polyparaphenylene derivatives, polyacetylene, polyacetylene derivatives, polydiacethylene, polydiacetylene derivatives, polyparaphenylenevinylene, polyparaphenylenevinylene derivatives, polynaphthalene, polynaphthalene derivatives, polyisothianaphthene (PITN), polyheteroarylenvinylene (ParV) in which the heteroarylene group is thiophene, furan or pyrrol, polyphenylene-sulphide (PPS), polyperinaphthalene (PPN), polyphthalocyanine (PPhc), and their derivatives, copolymers thereof and mixtures thereof.

14. A diode comprising:

a light emitting or absorbing region;

at least one first terminal coupled to the light emitting or absorbing region on a first side, the at least one first terminal having a height less than about 2 microns; and

a second terminal coupled to the light emitting or absorbing region on the first side, the second terminal having a height less than about 8 microns;

wherein the diode has a lateral dimension less than about 50 microns and a height less than about 25 microns.

15. The diode of claim 14, wherein:

the light emitting or absorbing region further comprises a mesa region;

the at least one first terminal is located peripherally to the mesa region on the light emitting or absorbing region; and

the second terminal is coupled centrally to the mesa region of the light emitting or absorbing region.

16. The diode of claim 14, wherein a contact of the second terminal is spaced apart from a contact of the at least one first terminal by about 1 to 7 microns in height.

17. The diode of claim 14, wherein:

the light emitting or absorbing region further comprises a mesa region; and

the at least one first terminal further comprises a plurality of first terminals, the plurality of first terminals spaced apart from each other and coupled to the light emitting or absorbing region peripherally to the mesa region on the first side.

18. The diode of claim 14, wherein each lateral side of the diode has a substantially sigmoidal curvature and terminates in a curved point.

19. The diode of claim 14, wherein the diode comprises at least one inorganic semiconductor selected from the group consisting of:

silicon, gallium arsenide (GaAs), gallium nitride (GaN), GaP, InAlGaP, AlInGaAs, InGaNAs, AlInGaSb and combinations thereof.

20. A diode comprising:

a light emitting or absorbing region having height less than about 7 microns;

at least one first terminal coupled to the light emitting or absorbing region on a first side; and

a second terminal coupled to the light emitting or absorbing region on the first side, wherein a contact of the second terminal is spaced apart from a contact of the at least one first terminal by about 1 to 7 microns in height;

wherein the diode has a lateral dimension less than about 50 microns and a height less than about 25 microns.