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Nanowire sized opto-electronic structure and method for manufacturing the same

  • US 9,419,183 B2
  • Filed: 12/16/2014
  • Issued: 08/16/2016
  • Est. Priority Date: 09/26/2011
  • Status: Active Grant
First Claim
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1. An opto-electric structure, comprising:

  • a plurality of nano elements arranged side by side on a support layer, wherein each nano element comprises at least a first conductivity type semiconductor nano sized core, wherein the core and a second conductivity type semiconductor form a pn or pin junction;

    a first electrode layer that comprises a conductive material and extends over the plurality of nano elements and is in electrical contact with at least a portion of the second conductivity type semiconductor wherein the first electrode layer forms an air bridge such that an empty space is located between the support layer, adjacent nano elements and the first electrode layer; and

    a material layer overlying the first electrode layer and contacting the first electrode layer.

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