Light emitting diode chip having wavelength converting layer and method of fabricating the same, and package having the light emitting diode chip and method of fabricating the same

• US 9,419,186 B2
• Filed: 02/05/2014
• Issued: 08/16/2016
• Est. Priority Date: 05/18/2010
• Status: Active Grant

• Current Assignee: Seoul Semiconductor Co., Ltd.
• Original Assignee: Seoul Semiconductor Co., Ltd.
• Inventors: Jung, Jung Hwa, Kim, Bang Hyun
• Primary Examiner(s): ENAD, CHRISTINE A
• Application Number:
  US14/173,287
• Publication Number:
  US 20140151633A1
• Time in Patent Office: 923 Days
• Field of Search: 313/506, 257/13, 257/E33.012, 257/E33.061
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/50 Wavelength conversion elements
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil
• CPC Class Codes: H01L 33/56 Materials, e.g. epoxy or silicone resin

Abstract

An exemplary embodiment of the present invention discloses a light-emitting diode (LED) chip including a semiconductor stacked structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, a first electrode disposed on the semiconductor stacked structure, a wavelength converting layer disposed on the semiconductor stacked structure, and a transparent resin disposed on the wavelength converting layer.

Claims

1. A light-emitting diode (LED) chip, comprising:

a semiconductor stacked structure comprising a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer;

a wavelength converting layer disposed directly on a side surface of the semiconductor stacked structure;

a first insulating layer disposed on the semiconductor stacked structure;

a second insulating layer disposed on the first insulating layer;

a first electrode disposed on the semiconductor stacked structure; and

a second electrode disposed on the semiconductor stacked structure and electrically connected with the second conductivity-type semiconductor layer,

wherein;

the first insulating layer comprises a distributed Bragg reflector;

at least a portion of a side surface of the second insulating layer contacts the wavelength converting layer;

the first electrode is electrically connected with the first conductivity-type semiconductor layer; and

the first insulating layer contacts a side surface of the second electrode and a side surface of the active layer.

2. The LED chip of claim 1, further comprising a transparent conductive layer disposed between the first insulating layer and the semiconductor stacked structure.

3. The LED chip of claim 2, wherein the transparent conductive layer is electrically connected to the second conductivity-type semiconductor layer.

4. The LED chip of claim 1, further comprising:

a lower distributed Bragg reflector (DBR); and

a substrate disposed between the semiconductor stacked structure and the lower DBR.

5. The LED chip of claim 1,

wherein the side surface of the second insulating layer is substantially flush with the side surface of the semiconductor structure.

6. The LED chip of claim 1, wherein the wavelength converting layer is further disposed on an upper surface of the semiconductor stacked structure.

7. The LED chip of claim 6, further comprising a transparent resin disposed on the upper surface of the semiconductor stacked structure,

wherein a portion of the wavelength converting layer is interposed between the semiconductor stacked structure and the transparent resin.

8. The LED chip of claim 7, wherein the transparent resin is further disposed on the side surface of the semiconductor stacked structure,

wherein at least a portion of the wavelength converting layer is interposed between the semiconductor stacked structure and the transparent resin.

9. The LED chip of claim 6, wherein the transparent resin is a material selected from the group consisting of TiO₂, SiO₂, and Y₂O₃.

10. The LED chip of claim 1, wherein the first electrode comprises a lower electrode and an upper electrode disposed on the lower electrode.

11. The LED chip of claim 10, wherein at least a portion of the lower electrode is passing through the first insulating layer and electrically contacts the first conductivity-type semiconductor layer.

12. The LED chip of claim 1, wherein at least a portion of the second electrode is passing through the second insulating layer and electrically connected to the second conductivity-type semiconductor layer.

13. The LED chip of claim 12, further comprising a transparent conductive layer disposed between the second conductivity-type semiconductor layer and the second electrode.

14. A light-emitting diode (LED) package, comprising:

a mount; and

an LED chip disposed on the mount, wherein the LED chip comprises;

a semiconductor stacked structure comprising a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer;

a wavelength converting layer disposed directly on a side surface of the semiconductor stacked structure;

a first insulating layer disposed on the semiconductor stacked structure;

a second insulating layer disposed on the first insulating layer;

a first electrode disposed on the semiconductor stacked structure; and

a second electrode disposed on the semiconductor stacked structure and electrically connected with the second conductivity-type semiconductor layer,

wherein;

the first insulating layer comprises a distributed Bragg reflector;

at least a portion of a side surface of the second insulating layer contacts the wavelength converting layer;

the first electrode is electrically connected with the first conductivity-type semiconductor layer; and

the first insulating layer contacts a side surface of the second electrode and a side surface of the active layer.

15. The LED package of claim 14, wherein the mount comprises a printed circuit board, a lead frame, or a ceramic substrate.

16. The LED package of claim 15, wherein the mount further comprises lead terminals, wherein the lead terminals are electrically connected with the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer.