Low power scheme to protect the low voltage capacitors in high voltage IO circuits

• US 9,419,613 B2
• Filed: 09/18/2014
• Issued: 08/16/2016
• Est. Priority Date: 11/12/2013
• Status: Active Grant

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: P, Venkateswara Reddy, Ghatawade, Vinayak
• Primary Examiner(s): Donovan, Lincoln
• Assistant Examiner(s): Almo, Khareem E
• Application Number:
  US14/490,110
• Publication Number:
  US 20150130527A1
• Time in Patent Office: 698 Days
• Field of Search: None
• US Class Current: 1/1
• CPC Class Codes: H03K 19/0013 in field effect transistor circuits
• CPC Class Codes: H03K 19/00361 in field effect transistor circuits
• CPC Class Codes: H03K 19/018521 of complementary type, e.g. CMOS
• CPC Class Codes: H03K 19/018592 with a bidirectional operation

Abstract

An input/output (IO) circuit includes a first bias circuit and a second bias circuit coupled to a node. A first capacitor and a second capacitor are being cascaded and coupled to the node. The node is defined between the first capacitor and the second capacitor. A pad is coupled to the node. The first bias circuit maintains a voltage at the node below a threshold during a transmit mode and a receive mode of the IO circuit and the second bias circuit maintains the voltage at the node below the threshold during the receive mode. The voltage at the node is dependent on a voltage at the pad during the receive mode.

Claims

1. An input/output (IO) circuit comprising:

a first bias circuit and a second bias circuit coupled to a node;

a first capacitor and a second capacitor being cascaded, coupled to the node, the node being defined between the first capacitor and the second capacitor; and

a pad coupled to the node;

wherein the first bias circuit is configured to maintain a voltage at the node below a threshold during a transmit mode and a receive mode of the IO circuit and the second bias circuit is configured to maintain the voltage at the node below the threshold during the receive mode, wherein the voltage at the node is dependent on a voltage at the pad during the receive mode;

a reference voltage generator configured to receive a supply voltage and configured to generate a set of reference voltages that are supplied to the first bias circuit, the second bias circuit and the driver circuit, the set of reference voltages comprises one of a PMOS reference voltage, an NMOS reference voltage and a divided supply voltage, wherein the first bias circuit comprises;

a first PMOS transistor coupled to a first NMOS transistor configured to be driven by the divided supply voltage and the NMOS reference voltage respectively; and

a second PMOS transistor coupled to a second NMOS transistor configured to be driven by the PMOS reference voltage and the divided supply voltage respectively, wherein the first NMOS transistor and the second PMOS transistor are coupled to the node.

2. The IO circuit of claim 1 further comprising a driver circuit coupled to the node.

3. The IO circuit of claim 1, wherein the second bias circuit comprises:

a third PMOS transistor driven by the divided supply voltage, configured to be activated when the voltage at the node is above a first threshold voltage; and

a third NMOS transistor coupled to the third PMOS transistor and configured to be driven by the voltage at the pad during receive mode, wherein the third NMOS transistor is configured to be activated when the voltage at the pad is above a second threshold voltage.

4. The IO circuit of claim 3, wherein the driver circuit comprises:

a fourth NMOS transistor coupled to the node and configured to be activated when the voltage at the pad is above the second threshold voltage; and

a fifth NMOS transistor coupled to the fourth NMOS transistor, wherein the fourth NMOS transistor and the fifth NMOS transistor having a common node of drains thereof coupled to a gate terminal of the third NMOS transistor.

5. The IO circuit of claim 4, wherein the third PMOS transistor is configured to be activated when the voltage at the node is above the first threshold voltage and the third NMOS transistor and the fourth NMOS transistor are configured to be activated when the voltage at the pad is above the second threshold voltage such that a discharge path is provided to the voltage at the node.

6. A method comprising:

coupling a first capacitor and a second capacitor to a node, the node being defined between the first capacitor and the second capacitor, the first capacitor and the second capacitor being cascaded in an IO (input/output) circuit;

configuring a first bias circuit to maintain a voltage at the node below a threshold during a transmit mode and a receive mode of the IO circuit; and

configuring a second bias circuit to maintain the voltage at the node below the threshold during the receive mode, wherein the first bias circuit comprises;

a first PMOS transistor coupled to a first NMOS transistor configured to be driven by the divided supply voltage and the NMOS reference voltage respectively; and

a second PMOS transistor coupled to a second NMOS transistor configured to be driven by the PMOS reference voltage and the divided supply voltage respectively, wherein the first NMOS transistor and the second PMOS transistor are coupled to the node.

7. The method of claim 6 further comprising:

activating the second bias circuit when a voltage at a pad is above a second threshold voltage and the voltage at the node is above a first threshold voltage; and

activating a driver circuit coupled to the node when the voltage at the pad is above the second threshold voltage.

8. The method of claim 7, wherein the activating the second bias circuit comprises:

activating a third PMOS transistor when the voltage at the node is above the first threshold voltage; and

activating a third NMOS transistor when the voltage at the pad is above the second threshold voltage.

9. The method of claim 8, wherein activating the driver circuit comprises activating a fourth NMOS transistor when the voltage at the pad is above the second threshold voltage, wherein the fourth NMOS transistor and a fifth NMOS transistor having a common node of drains thereof coupled to a gate terminal of the third NMOS transistor.

10. The method of claim 7 further comprising generating a set of reference voltages from a supply voltage, wherein the set of reference voltages are provided to the first bias circuit, second bias circuit and the driver circuit.

11. The method of claim 10, wherein generating a set of reference voltages further comprises generating at least one of a PMOS reference voltage, an NMOS reference voltage and a divided supply voltage.

12. The method of claim 6 further comprising driving the third PMOS transistor by the divided supply voltage and driving the fourth NMOS transistor by the NMOS reference voltage.

13. A computing device comprising:

a processing unit;

a memory module coupled to the processing unit;

a plurality of logic circuits coupled to the processing unit and the memory module; and

an input/output (IO) circuit coupled to atleast one logic circuit, the IO circuit comprising;

a first bias circuit and a second bias circuit coupled to a node;

a first capacitor and a second capacitor being cascaded, coupled to the node, the node being defined between the first capacitor and the second capacitor;

a driver circuit coupled to the node; and

a pad coupled to the node, wherein the first bias circuit is configured to maintain a voltage at the node below a threshold during a transmit mode and a receive mode of the IO circuit and the second bias circuit is configured to maintain the voltage at the node below the threshold during the receive mode, wherein the voltage at the node is dependent on a voltage at the pad during the receive mode.

14. The computing device of claim 13 further comprising a reference voltage generator configured to receive a supply voltage and configured to generate a set of reference voltages that are supplied to the first bias circuit, second bias circuit and the driver circuit, wherein the set of reference voltages comprises one of a PMOS reference voltage, an NMOS reference voltage and a divided supply voltage.

15. The computing device of claim 13, wherein the first bias circuit comprises:

a first PMOS transistor coupled to a first NMOS transistor configured to be driven by the divided supply voltage and the NMOS reference voltage respectively; and

a second PMOS transistor coupled to a second NMOS transistor configured to be driven by the PMOS reference voltage and the divided supply voltage respectively, wherein the first NMOS transistor and the second PMOS transistor are coupled to the node.

16. The computing device of claim 13, wherein the second bias circuit comprises:

a third PMOS transistor driven by the divided supply voltage, configured to be activated when the voltage at the node is above a first threshold voltage; and

a third NMOS transistor coupled to the third PMOS transistor and configured to be driven by the voltage at the pad during receive mode of the IO circuit, wherein the third NMOS transistor is configured to be activated when the voltage at the pad is above a second threshold voltage.

17. The computing device of claim 13, wherein the driver circuit comprises:

a fourth NMOS transistor coupled to the node and configured to be activated when the voltage at the pad is above the second threshold voltage; and

a fifth NMOS transistor coupled to the fourth NMOS transistor, wherein the fourth NMOS transistor and the fifth NMOS transistor having a common node of drains thereof coupled to a gate terminal of the third NMOS transistor.

18. The computing device of claim 13, wherein the third PMOS transistor is activated when the voltage at the node is above the first threshold voltage and the third NMOS transistor and the fourth NMOS transistor are configured to be activated when the voltage at the pad is above the second threshold voltage such that a discharge path is provided to the voltage at the node.