High-k transformers extending into multiple dielectric layers

• US 9,424,970 B2
• Filed: 11/29/2010
• Issued: 08/23/2016
• Est. Priority Date: 11/29/2010
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Jin, Jun-De, Yeh, Tzu-Jin
• Primary Examiner(s): Lian, Mangtin
• Assistant Examiner(s): Hinson, Ronald
• Application Number:
  US12/955,527
• Publication Number:
  US 20120133471A1
• Time in Patent Office: 2,094 Days
• Field of Search: 336/200
• US Class Current: 1/1
• CPC Class Codes: H01F 2017/0046 with a conductive path having a bridge
• CPC Class Codes: H01F 2027/2809 on stacked layers
• CPC Class Codes: H01F 27/2804 Printed windings
• CPC Class Codes: H01F 5/003 Printed circuit coils

Abstract

A device includes a first plurality of dielectric layers over a substrate and a second plurality of dielectric layers over the first plurality of dielectric layers. A metal inductor includes a first metal portion, a second metal portion, a third metal portion, and a fourth metal portion, wherein each of the first, the second, the third, and the fourth metal portions extends into the first and the second plurality of dielectric layers. A first metal bridge connects the first metal portion to the second metal portion, wherein the first metal bridge extends into the first plurality of dielectric layers and not into the second plurality of dielectric layers. A second metal bridge connects the third metal portion to the fourth metal portion, wherein the second metal bridge extends into the second plurality of dielectric layers and not into the first plurality of dielectric layers.

Claims

1. A device comprising:

a substrate;

a first plurality of dielectric layers over the substrate;

a second plurality of dielectric layers over the first plurality of dielectric layers; and

a first metal inductor comprising;

a lower portion comprising a first plurality of ring-like structures, wherein each of the first plurality of ring-like structures extends into each of the first plurality of dielectric layers, wherein each of the first plurality of ring-like structures comprises first metal lines and first vias interconnecting the first metal lines;

an upper portion overlying the lower portion, the upper portion comprising a second plurality of ring-like structures, wherein each of the second plurality of ring-like structures extends into each of the second plurality of dielectric layers, wherein each of the second plurality of ring-like structures comprises second metal lines and second vias interconnecting the second metal lines;

a first metal bridge interconnecting two of the first plurality of ring-like structures wherein the first metal bridge extends into each of the first plurality of dielectric layers and not into the second plurality of dielectric layers, wherein the first metal bridge comprises third metal lines and third vias interconnecting the third metal lines; and

a second metal bridge interconnecting two of the second plurality of ring-like structures, wherein the second metal bridge extends into each of the second plurality of dielectric layers and not into the first plurality of dielectric layers, wherein the second metal bridge comprises fourth metal lines and fourth vias interconnecting the fourth metal lines, and wherein the first metal bridge and the second metal bridge are separated from each other by a dividing dielectric layer.

2. The device of claim 1, wherein the first plurality of ring-like structures forms a concentric pattern, with outer ones of the first plurality of ring-like structures encircling inner ones of the first plurality of ring-like structures, and wherein the second plurality of ring-like structures forms an additional concentric pattern, with outer ones of the second plurality of ring-like structures encircling inner ones of the second plurality of ring-like structures.

3. The device of claim 1, wherein each of the second plurality of ring-like structures overlaps a respective one of the first plurality of ring-like structure with a one-to-one correspondence to form a plurality of semi-turns, wherein each of the semi-turns comprises a first portion in the first plurality of ring-like structure and a second portion in the second plurality of ring-like structure, with the first portion and the second portion interconnected to form an integrated metal feature extends through all dielectric layers occupied by the first metal inductor.

4. The device of claim 1, wherein the first and the second metal bridges cross each other in a top view of the device, and wherein the second metal bridge comprises a portion directly over and overlapping a portion of the first metal bridge.

5. The device of claim 1, wherein each of the first plurality of ring-like structures penetrates through each of the first plurality of dielectric layers, each of the second plurality of ring-like structures penetrates through each of the second plurality of dielectric layers, the first metal bridge penetrates through each of the first plurality of dielectric layers, and the second metal bridge penetrates through each of the second plurality of dielectric layers.

6. The device of claim 1, wherein the first metal bridge comprise lower metal layers over the substrate, with the lower metal layers comprising copper, and the second metal bridges comprise upper metal layers comprising copper, and a redistribution layer comprising aluminum.

7. The device of claim 1, wherein the thickness of the first metal bridge is close to the thickness of the second metal bridge, with the thicknesses of the first and the second metal bridges measured in a direction substantially perpendicular to a major surface of the substrate.

8. The device of claim 1, wherein the first metal inductor is in a first chip, and the device further comprises:

a second chip bonded to the first chip; and

a second metal inductor in the second chip, wherein the second metal inductor substantially vertically overlaps the first metal inductor, and forms a transformer with the first metal inductor.

18. The device of claim 1, wherein one of the first plurality of ring-like structures comprises two semi-turns physically disconnected from each other, with each of the two semi-turns comprising two ends, wherein each of the two ends is connected to a metal bridge, and the two semi-turns in combination form a ring having two breaks on opposite sides of the ring.

9. A device comprising:

a substrate;

a plurality of metal layers over the substrate, wherein the plurality of metal layers is formed of a first metallic material comprising copper;

at least one redistribution metal layer over the plurality of metal layers, wherein the at least one redistribution metal layer is formed of a second metallic material comprising aluminum; and

a first metal inductor comprising;

a lower portion comprising a first plurality of ring-like structures, with outer ones of the first plurality of ring-like structures encircling inner ones of the first plurality of ring-like structures, wherein each of the first plurality of ring-like structures extends into at least two of the plurality of metal layers, and wherein each of the first plurality of ring-like structures comprises first metal lines and first vias interconnecting the first metal lines;

an upper portion comprising a second plurality of ring-like structures, with outer ones of the second plurality of ring-like structures encircling inner ones of the second plurality of ring-like structures, wherein each of the second plurality of ring-like structures extends into the at least one redistribution metal layer, and wherein each of the second plurality of ring-like structures comprises second metal lines and second vias interconnecting the second metal lines;

a first plurality of metal bridges, each connecting two of the first plurality of ring-like structures, wherein each of the first plurality of metal bridges extends into each of the at least two of the plurality of metal layers, and each of the first plurality of metal bridges comprises third metal lines and third vias interconnecting the third metal lines; and

a second plurality of metal bridges, each connecting additional two of the second plurality of ring-like structures, wherein each of the second plurality of metal bridges extends into each of the at least one redistribution metal layer, and each of the second plurality of metal bridges comprises fourth metal lines and fourth vias interconnecting the fourth metal lines, wherein the first plurality of metal bridges and the second plurality of metal bridges cross each other in a top view of the device, and wherein the second plurality of metal bridges comprises portions directly over and overlapping portions of the first plurality of metal bridges.

10. The device of claim 9, wherein a dielectric material of a via layer separates the second plurality of metal bridges from the first plurality of metal bridges.

11. The device of claim 9, wherein the first plurality of metal bridges is formed in low-k dielectric layers, and the second plurality of metal bridges is formed in at least one low-k dielectric layer and at least one non-low-k dielectric layer.

12. The device of claim 9, wherein the first metal inductor is in a first chip, and the device further comprises:

a second chip bonded to the first chip; and

a second metal inductor in the second chip, wherein the second metal inductor substantially vertically overlaps the first metal inductor, and forms a transformer with the first metal inductor.

13. The device of claim 9, wherein each of the second plurality of ring-like structures overlaps a respective one of the first plurality of ring-like structure with a one-to-one correspondence to form a plurality of semi-turns, wherein two of the semi-turns that are physically disconnected from each other form a ring with two breaks, and each of the two of the semi-turns has two ends, each terminating at a metal bridge.

19. The device of claim 9, wherein one of the first plurality of ring-like structures comprises two semi-turns physically disconnected from each other, with each of the two semi-turns comprising two ends, wherein each of the two ends is connected to a metal bridge, and the two semi-turns in combination form a ring having two breaks on opposite sides of the ring.

14. A device comprising:

a substrate;

a plurality of dielectric layers over the substrate, wherein the plurality of dielectric layers comprises;

a first plurality of dielectric layers, with a bottom dielectric layer being a bottommost layer of the first plurality of dielectric layers;

an intermediate dielectric layer over the first plurality of dielectric layers; and

a second plurality of dielectric layers over the intermediate dielectric layer, with a top dielectric layer being a topmost layer of the second plurality of dielectric layers;

a metal inductor comprising;

a plurality of semi-turns, wherein each of the semi-turns continuously extends from a bottom surface of the bottom dielectric layer to a top surface of the top dielectric layer, wherein each of the plurality of semi-turns comprises first metal lines and first vias interconnecting the first metal lines, and wherein two semi-turns in the plurality of semi-turns are physically disconnected from each other, and are in combination form a ring with two breaks, and each of the two semi-turns have two ends, with each of the two ends terminating at a metal bridge;

a first metal bridge interconnecting first two of the plurality of semi-turns, wherein the first metal bridge extends into the first plurality of dielectric layers and not into the second plurality of dielectric layers and the intermediate dielectric layer, and wherein the first metal bridge comprises second metal lines and second vias interconnecting the second metal lines; and

a second metal bridge interconnecting second two of the plurality of semi-turns, wherein the second metal bridge extends into the second plurality of dielectric layers and not into the first plurality of dielectric layers and the intermediate dielectric layer, and wherein the second metal bridge comprises third metal lines and third vias interconnecting the third metal lines.

15. The device of claim 14, wherein a topmost metal feature of the metal inductor is in the top dielectric layer, and a bottommost metal feature of the metal inductor is in the bottom dielectric layer.

16. The device of claim 14, wherein each of the a plurality of semi-turns includes a portion in each of the top dielectric layer, the bottom dielectric layer, and all dielectric layers between the top dielectric layer and the bottom dielectric layer.

17. The device of claim 14, wherein the second metal bridge comprises a portion overlapping a portion of the first metal bridge.