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Semiconductor device including oxide semiconductor and manufacturing method thereof

  • US 9,425,045 B2
  • Filed: 05/13/2011
  • Issued: 08/23/2016
  • Est. Priority Date: 05/21/2010
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device comprising the step of:

  • forming an oxide semiconductor film serving as a channel formation region of a transistor by a sputtering method at a temperature higher than 300°

    C. and lower than or equal to 500°

    C. so that the number of water molecules eliminated from the oxide semiconductor film is 0.5/nm3 or less according to thermal desorption spectroscopy and a carrier density of the oxide semiconductor film is less than 1×

    1012/cm3,wherein the number of water molecules is calculated by comparing a first value of integral of a TDS spectrum of water molecules in the oxide semiconductor film with a second value of integral of a TDS spectrum of hydrogen molecules in a reference sample,wherein the first value of integral and the second value of integral are calculated within a temperature range of higher than or equal to 150°

    C. and lower than or equal to 400°

    C., andwherein the reference sample is a silicon wafer.

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