Mechanisms for semiconductor device structure
First Claim
1. A semiconductor device structure, comprising:
- a substrate;
a metal gate structure formed over the substrate;
a spacer comprising an inner side and an outermost side, wherein the inner side is closer to the metal gate structure than the outermost side, wherein the inner side is formed on the metal gate structure; and
a funnel shaped hard mask structure formed over and directly aligned with the metal gate structure, wherein a portion of a top surface of the funnel shaped hard mask structure extends horizontally past the outmost side of the spacer.
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Accused Products
Abstract
Embodiments of mechanisms of a semiconductor device structure are provided. The semiconductor device structure includes a substrate and a metal gate structure formed over the substrate. The semiconductor device structure further includes a funnel shaped hard mask structure formed over the metal gate structure. Formation of voids, which tend to be formed in a rectangular hard mask structure, is prevented. In addition, formation of a self-aligned contact in the semiconductor device becomes easier, and risks of shortage between the contact and a metal gate structure in the semiconductor device decreased. In addition, a method for forming the semiconductor device structure is also provided. The method may include a gate last process.
8 Citations
16 Claims
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1. A semiconductor device structure, comprising:
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a substrate; a metal gate structure formed over the substrate; a spacer comprising an inner side and an outermost side, wherein the inner side is closer to the metal gate structure than the outermost side, wherein the inner side is formed on the metal gate structure; and a funnel shaped hard mask structure formed over and directly aligned with the metal gate structure, wherein a portion of a top surface of the funnel shaped hard mask structure extends horizontally past the outmost side of the spacer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device structure, comprising:
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a substrate; a metal gate structure formed over the substrate; a spacer comprising an inner side and an outermost side, wherein the inner side is closer to the metal gate structure than the outermost side, wherein the inner side is formed on the metal gate structure; a funnel shaped hard mask structure formed over and directly aligned with the metal gate structure, wherein a portion of a top surface of the funnel shaped hard mask structure extends horizontally past the outmost side of the spacer, wherein the funnel shaped hard mask structure is made of silicon nitride; and a self-aligned contact formed over the substrate. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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Specification