Semiconductor device having strain-relaxed buffer layer and method of manufacturing the same
First Claim
Patent Images
1. A semiconductor device, comprising:
- a substrate;
a strain-relaxed buffer layer having a p-type impurity on the substrate;
a first channel layer on the strain-relaxed buffer layer and located in a first region of the device;
an n-type well in the strain-relaxed buffer layer and located in a second region of the device;
a second channel layer on an upper bound of the n-type well;
a gate dielectric disposed directly on the first and second channel layers;
a device isolation region comprising insulation material in the strain-relaxed buffer layer at a boundary between the first region and the second region; and
wherein a lattice constant of the first channel layer is less than a lattice constant of the strain-relaxed buffer layer, but a lattice constant of the second channel layer is greater than said lattice constant of the strain-relaxed buffer layer,the bottom surface of the device isolation region is disposed above the upper surface of the substrate, andthe lowermost bound of said n-type well is disposed at a level above the substrate and below the level of the bottom surface of the device isolation region.
1 Assignment
0 Petitions
Accused Products
Abstract
A semiconductor device includes a substrate, a strain-relaxed buffer layer on the substrate, at least one well in the strain-relaxed buffer layer, a first channel layer on the strain-relaxed buffer layer, and a second channel layer on the well. A lattice constant of material constituting the first well is less than a lattice constant of the material constituting the strain-relaxed buffer layer, but a lattice constant of material constituting the second well is greater than the lattice constant of the material constituting the strain-relaxed buffer layer.
29 Citations
17 Claims
-
1. A semiconductor device, comprising:
-
a substrate; a strain-relaxed buffer layer having a p-type impurity on the substrate; a first channel layer on the strain-relaxed buffer layer and located in a first region of the device; an n-type well in the strain-relaxed buffer layer and located in a second region of the device; a second channel layer on an upper bound of the n-type well; a gate dielectric disposed directly on the first and second channel layers; a device isolation region comprising insulation material in the strain-relaxed buffer layer at a boundary between the first region and the second region; and wherein a lattice constant of the first channel layer is less than a lattice constant of the strain-relaxed buffer layer, but a lattice constant of the second channel layer is greater than said lattice constant of the strain-relaxed buffer layer, the bottom surface of the device isolation region is disposed above the upper surface of the substrate, and the lowermost bound of said n-type well is disposed at a level above the substrate and below the level of the bottom surface of the device isolation region. - View Dependent Claims (2, 3, 4, 11, 12, 16, 17)
-
-
5. A semiconductor device, comprising:
-
a substrate; a strain-relaxed buffer layer having a p-type impurity on the substrate; a source and a drain of an NMOS transistor, a first channel layer disposed on the strain-relaxed buffer layer and extending in a lengthwise direction between the source and drain of the NMOS transistor, and a gate electrode of the NMOS transistor disposed on the first channel layer; and a source and a drain of a PMOS transistor, a second channel layer disposed on the strain-relaxed buffer layer and extending in a lengthwise direction between the source and drain of the PMOS transistor, and a gate electrode of the PMOS transistor disposed on the second channel layer, and wherein a lattice constant of the first channel layer is less than a lattice constant of the strain-relaxed buffer layer, and a lattice constant of the second channel layer is greater than said lattice constant of the strain-relaxed buffer layer, and the source and drain of the NMOS transistor, the source and drain of the PMOS transistor, the first channel layer, and the second channel layer have upper surfaces, respectively, that are coplanar, the semiconductor device further comprises a device isolation region comprising insulation material in the strain-relaxed buffer layer at a boundary between the NMOS transistor and the PMOS transistor, and the strain-relaxed buffer layer has at least one well containing a dopant of a respective conductivity type, a respective one of said channel layers is disposed on each said well, the bottom surface of the device isolation region is disposed above the upper surface of the substrate, and the lowermost bound of each said well is disposed at a level below the level of the bottom surface of the device isolation region. - View Dependent Claims (6, 7, 8, 9, 10, 13, 14, 15)
-
Specification