Semiconductor device
First Claim
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1. A semiconductor device comprising:
- a signal line;
a first scan line;
a second scan line;
a first transistor comprising a source, a drain, and a gate;
a second transistor comprising a source, a drain, and a gate;
a pixel electrode; and
a capacitor comprising an electrode and the pixel electrode over the electrode,wherein one of the source and the drain of the first transistor is electrically connected to the pixel electrode,wherein the first scan line is electrically connected to the gate of the first transistor,wherein the signal line is electrically connected to the other of the source and the drain of the first transistor and one of the source and the drain of the second transistor,wherein the second scan line is directly connected to the gate of the second transistor,wherein the electrode of the capacitor comprises an oxide film comprising indium and zinc,wherein a first insulating film is provided over the first scan line and the second scan line,wherein the source and the drain of the first transistor are over the first insulating film,wherein the first insulating film comprises an opening, andwherein the electrode of the capacitor is in direct contact with the second scan line in the opening of the first insulating film.
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Abstract
A semiconductor device having a high aperture ratio, including a capacitor with increased capacitance, and consuming low power is provided. The semiconductor device includes pixels defined by x (x is an integer of 2 or more) scan lines and y (y is an integer of 1 or more) signal lines, and each of the pixels includes a transistor, and a capacitor. The transistor includes a semiconductor film having a light-transmitting property. The capacitor includes a dielectric film between a pair of electrodes. In the capacitor between an (m−1)-th (m is an integer of 2 or more and x or less) scan line and an m-th scan line, a semiconductor film on the same surface as the semiconductor film having a light-transmitting property of the transistor serves as one of the pair of electrodes and is electrically connected to the (m−1)-th scan line.
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Citations
21 Claims
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1. A semiconductor device comprising:
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a signal line; a first scan line; a second scan line; a first transistor comprising a source, a drain, and a gate; a second transistor comprising a source, a drain, and a gate; a pixel electrode; and a capacitor comprising an electrode and the pixel electrode over the electrode, wherein one of the source and the drain of the first transistor is electrically connected to the pixel electrode, wherein the first scan line is electrically connected to the gate of the first transistor, wherein the signal line is electrically connected to the other of the source and the drain of the first transistor and one of the source and the drain of the second transistor, wherein the second scan line is directly connected to the gate of the second transistor, wherein the electrode of the capacitor comprises an oxide film comprising indium and zinc, wherein a first insulating film is provided over the first scan line and the second scan line, wherein the source and the drain of the first transistor are over the first insulating film, wherein the first insulating film comprises an opening, and wherein the electrode of the capacitor is in direct contact with the second scan line in the opening of the first insulating film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device comprising:
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a substrate; a first scan line and a second scan line over the substrate; a first insulating film over the first scan line and the second scan line; a first oxide film, a second oxide film, and a third oxide film each over the first insulating film; a signal line over and electrically connected to the first oxide film and the third oxide film; a conductive film over and electrically connected to the first oxide film; a second insulating film over the signal line, the conductive film, and the second oxide film; and a pixel electrode over the second insulating film and electrically connected to the conductive film, wherein each of the first oxide film, the second oxide film, and the third oxide film comprises indium and zinc, wherein the first oxide film overlaps with the first scan line, wherein the second oxide film overlaps with the pixel electrode, wherein the third oxide film overlaps with the second scan line, and wherein the second oxide film is directly connected to the second scan line. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsMiyake, Hiroyuki, Yamazaki, Shunpei
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Primary Examiner(s)HOANG, QUOC DINH
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Application NumberUS14/010,841Publication NumberTime in Patent Office1,092 DaysField of Search257/43, 257/59, 257/68US Class Current1/1CPC Class CodesG02F 1/136213 Storage capacitors associat...G02F 1/136286 Wiring, e.g. gate line, dra...G02F 2201/40 Arrangements for improving ...H01L 27/1255 integrated with passive dev...
