Transistor structure with improved unclamped inductive switching immunity
First Claim
1. A semiconductor transistor structure, comprising:
- a substrate of a first conductivity type;
an epitaxial layer adjacent to said substrate;
a gate structure located above said epitaxial layer,a drain region of a second conductivity type within said epitaxial layer;
a source region of said second conductivity type within said epitaxial layer;
a body structure of said first conductivity type within said epitaxial layer at least partially formed under said gate structure and extending laterally under said source region;
an electrically conductive trench-like feed-through element that passes through said epitaxial layer and contacts said substrate and passes through and contacts said source region; and
a first tub region of said first conductivity type formed under said source region, and adjacent laterally to and in contact with said body structure, and wherein said first tub region is in contact with said trench-like feed-through element.
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Accused Products
Abstract
A laterally diffused metal oxide semiconductor (LDMOS) transistor structure with improved unclamped inductive switching immunity. The LDMOS includes a substrate and an adjacent epitaxial layer both of a first conductivity type. A gate structure is above the epitaxial layer. A drain region and a source region, both of a second conductivity type, are within the epitaxial layer. A channel is formed between the source and drain region and arranged below the gate structure. A body structure of the first conductivity type is at least partially formed under the gate structure and extends laterally under the source region, wherein the epitaxial layer is less doped than the body structure. A conductive trench-like feed-through element passes through the epitaxial layer and contacts the substrate and the source region. The LDMOS includes a tub region of the first conductivity type formed under the source region, and adjacent laterally to and in contact with said body structure and said trench-like feed-through element.
87 Citations
20 Claims
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1. A semiconductor transistor structure, comprising:
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a substrate of a first conductivity type; an epitaxial layer adjacent to said substrate; a gate structure located above said epitaxial layer, a drain region of a second conductivity type within said epitaxial layer; a source region of said second conductivity type within said epitaxial layer; a body structure of said first conductivity type within said epitaxial layer at least partially formed under said gate structure and extending laterally under said source region; an electrically conductive trench-like feed-through element that passes through said epitaxial layer and contacts said substrate and passes through and contacts said source region; and a first tub region of said first conductivity type formed under said source region, and adjacent laterally to and in contact with said body structure, and wherein said first tub region is in contact with said trench-like feed-through element. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor transistor structure comprising:
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a substrate of a first conductivity type; an epitaxial layer adjacent to said substrate; a gate structure adjacent to and located above said epitaxial layer, a drain region of a second conductivity type within said epitaxial layer; a source region of said second conductivity type within said epitaxial layer; a body structure of said first conductivity type within said epitaxial layer at least partially formed under said gate structure and extending laterally under said source region; an electrically conductive trench-like feed-through element that passes through and contacts a first tub region of said first conductivity type formed under said source region and adjacent laterally to and in contact with said body structure; wherein said drain region comprises a first region accessible to a drain contact and spaced apart from said gate structure, and a second region less doped than said first region and located at least partially under said first region within said epitaxial layer, such that said second region extends to at least partially under said gate structure, wherein said second region is coarsely aligned with an edge of said gate structure; and a clamp region of a first conductivity type located under said first region such that said second region separates said first region and said clamp region. - View Dependent Claims (10, 11, 12, 13)
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14. A semiconductor device, comprising:
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an epitaxial layer grown over a doped substrate layer, both of a first conductivity type, said epitaxial layer comprising a source region and a drain region, both of a second conductivity type, said epitaxial layer further comprising a body structure of said first conductivity type; a gate structure above said epitaxial layer; an electrically conductive trench-like feed-through element that passes through said epitaxial layer and contacts said substrate layer and said source region; and a first tub region of said first conductivity type formed under said source region, and adjacent laterally to and in contact with said body structure, and wherein said first tub region is in contact with said trench-like feed-through element. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification