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Structures of and methods of fabricating split gate MIS devices

  • US 9,425,305 B2
  • Filed: 08/26/2010
  • Issued: 08/23/2016
  • Est. Priority Date: 10/20/2009
  • Status: Active Grant
First Claim
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1. A split gate field effect transistor device, comprising:

  • a split gate structure having a trench, a gate electrode and a source electrode;

    a first poly layer disposed within the trench connected to the source electrode;

    a source contact connecting the first poly layer;

    a second poly layer connected to the gate electrode; and

    a gate contact connecting the second poly layer, wherein a top portion of an oxide within said trench, a surface of an active region, the source contact and the gate contact are coplanar.

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