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Through silicon via including multi-material fill

  • US 9,425,328 B2
  • Filed: 09/11/2013
  • Issued: 08/23/2016
  • Est. Priority Date: 09/12/2012
  • Status: Active Grant
First Claim
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1. An apparatus comprising:

  • a substrate including at least one via disposed in the substrate, wherein the substrate comprises;

    a trench having a substantially trapezoidal cross-section, the trench extending through the substrate between a lower surface of the substrate and an upper surface of the substrate, wherein the top of the trench opens to a top opening, and the bottom of the trench opens to a bottom opening, the top opening being larger than the bottom opening; and

    a mouth surrounding the top opening and extending between the upper surface and the top opening, wherein a mouth opening in the upper surface is larger than the top opening of the trench,a second substrate bonded to the substrate;

    wherein the via comprises;

    a dielectric layer disposed on an inside surface of a trench; and

    a fill disposed in the trench, with the dielectric layer sandwiched between the fill and the substrate,wherein the trench defines a circuit in the substrate, with an inner portion of the substrate being in the circuit, and an outer portion surrounding the circuit,wherein the second substrate includes a sense capacitor, wherein one electrode is formed by a device substrate connected through a conductive substrate bond to a first contact coupled to the inner portion and another electrode is formed by a second contact coupled to the outer portion.

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