Semiconductor substrate, semiconductor device, and manufacturing methods thereof

• US 9,425,347 B2
• Filed: 09/12/2014
• Issued: 08/23/2016
• Est. Priority Date: 06/10/2009
• Status: Active Grant

• Current Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Inventors: Sakai, Shiro
• Primary Examiner(s): SANDVIK, BENJAMIN P
• Application Number:
  US14/485,075
• Publication Number:
  US 20150037963A1
• Time in Patent Office: 711 Days
• Field of Search: None
• US Class Current: 1/1
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02639 Preparation of substrate for selective deposition
• CPC Class Codes: H01L 21/02642 Mask materials other than SiO2 or SiN
• CPC Class Codes: H01L 21/0265 Pendeoepitaxy
• CPC Class Codes: H01L 21/02664 Aftertreatments planarisation in general H01L21/304
• CPC Class Codes: H01L 33/0066 with a substrate not being a III-V compound
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/16 with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous

Abstract

A method of manufacturing a semiconductor substrate includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a first portion of a second semiconductor layer on the first semiconductor layer and the metallic material layer, removing the metallic material layer under the first portion of the second semiconductor layer by dipping the substrate in a solution, forming a second portion of the second semiconductor layer on the first portion of the second semiconductor layer, and forming a cavity in a portion of the first semiconductor layer located under where the metallic material layer was removed.

Claims

1. A method of manufacturing a semiconductor substrate, the method comprising:

forming a first semiconductor layer on a substrate;

forming a metallic material layer on a first portion of the first semiconductor layer;

forming a second semiconductor layer on the first semiconductor layer and the metallic material layer; and

forming a cavity in a portion of the first semiconductor layer directly under the metallic material layer along a line perpendicular to the plane of the substrate,

wherein;

the second semiconductor layer directly contacts a second portion of the first semiconductor layer;

the metallic material layer comprises titanium or chromium; and

the semiconductor substrate is formed by separating the substrate from the first semiconductor layer and the second semiconductor layer using the cavity formed in the first semiconductor layer.

2. The method of claim 1, wherein the first semiconductor layer comprises nitrogen.

3. The method of claim 1, wherein the substrate comprises a sapphire substrate or a silicon-based substrate.

4. The method of claim 1, wherein a laser lift-off process is used to separate the substrate.

5. The method of claim 1, wherein a polishing process is used to separate the substrate.