Vertical hall effect device

• US 9,425,385 B2
• Filed: 05/09/2014
• Issued: 08/23/2016
• Est. Priority Date: 05/09/2014
• Status: Expired due to Fees

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Ausserlechner, Udo
• Primary Examiner(s): Aurora, Reena
• Application Number:
  US14/273,807
• Publication Number:
  US 20150323614A1
• Time in Patent Office: 837 Days
• Field of Search: 324/251
• US Class Current: 1/1
• CPC Class Codes: G01R 33/0023 Electronic aspects, e.g. circuits for stimulation, evaluation, control; Treating the measured signals; calibration G01R33/0017 takes precedence
• CPC Class Codes: G01R 33/077 Vertical Hall-effect devices
• CPC Class Codes: H10B 61/00 Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• CPC Class Codes: H10N 52/101 Semiconductor Hall-effect devices
• CPC Class Codes: H10N 52/80 Constructional details
• CPC Class Codes: H10N 59/00 Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00 MRAM devices H10B61/00

Abstract

A vertical Hall effect device includes at least four Hall effect regions which are partly decoupled from each other, and each of the at least four Hall effect regions has first and second opposite faces. Each of the Hall effect regions has on the first face a first contact and a second contact that are placed symmetrically with respect to a plane of symmetry at the respective Hall effect region, wherein the plane of symmetry is orientated perpendicular to a straight line between the first contact and the second contact of the respective Hall effect region. Each of the Hall effect regions has at least one contact area placed in an area around the respective plane of symmetry, wherein low ohmic connection means include at least one low ohmic connecting path connecting the contact areas of the Hall effect regions.

Claims

1. A vertical Hall effect device comprising:

at least four Hall effect regions comprising a first Hall effect region, a second Hall effect region, a third Hall effect region and a fourth Hall effect region, which are at least partly decoupled from each other;

wherein each of the at least four Hall effect regions has a first face and a second face opposite of the first face;

wherein each of the at least four Hall effect regions has on the first face a first contact as well as a second contact, wherein the first contact and the second contact are placed symmetrically with respect to a plane of symmetry at the respective Hall effect region, wherein the plane of symmetry is orientated perpendicular to a straight line between the first contact and the second contact of the respective Hall effect region;

wherein each of the at least four Hall effect regions has at least one contact area, which is placed at least in an area around the respective plane of symmetry, wherein low ohmic connection means comprise at least one low ohmic connecting path connecting the contact areas of the at least four Hall effect regions.

2. A vertical Hall effect device according to claim 1, wherein each of the at least four Hall effect regions has one of said contact areas arranged on the first face, wherein the low ohmic connecting path contacting the areas is arranged on the first face.

3. A vertical Hall effect device according to claim 2, wherein the low ohmic connecting path arranged on the first face comprises a low ohmic connection wire structure.

4. A vertical Hall effect device according to claim 1, wherein each of the at least four Hall effect regions has one of said contact areas arranged on the second face and the contact areas arranged on the second face are connected by a low ohmic connecting path comprising a low ohmic layer structure or wherein each of the at least four Hall effect regions has one of said contact areas arranged between the first and the second face and the contact areas arranged between the first face and the second face are connected by a low ohmic connecting path comprising a low ohmic layer structure.

5. A vertical Hall effect device according to claim 4, wherein the low ohmic layer structure comprises a buried layer.

6. A vertical Hall effect device according to claim 1, wherein at least two of the Hall effect regions are arranged in a row, wherein neighboring Hall effect regions of the row are spaced by a respective resistive bridge portion, wherein resistive ending portions having a similar geometry and/or comprising a similar material as the bridge portion are attached to both ends of the row.

7. A vertical Hall effect device according to claim 1, wherein the first Hall effect region, the second Hall effect region, the third Hall effect region and the fourth Hall effect region are arranged on a common substrate.

8. A vertical Hall effect device according to claim 1, wherein at least two of the Hall effect regions are at least partially decoupled along a minimum distance in a top view between the contacts of the two Hall effect regions by a reverse biased pn-junction and/or by a trench-wall coated with an insulating thin film.

9. A vertical Hall effect device according to claim 1, wherein the first Hall effect region and the second Hall effect region are arranged in such a way that their planes of symmetry are parallel or identical, and wherein the third Hall effect region and the fourth Hall effect region are arranged in such a way that their planes of symmetry are parallel or identical.

10. A vertical Hall effect device according to claim 1, wherein the first contacts of the first Hall effect region and the second Hall effect region are facing away from the respective plane of symmetry in a same direction, wherein the second contacts of the first Hall effect region and the second Hall effect region are facing away from the respective plane of symmetry in an opposite direction, wherein the first contacts of the third Hall effect region and the fourth Hall effect region are facing away from the respective plane of symmetry in a same direction, wherein the second contacts of the third Hall effect region and the fourth Hall effect region are facing away from the respective plane of symmetry in an opposite direction.

11. A vertical Hall effect device according to claim 1, wherein the first Hall effect region, the second Hall effect region, the third Hall effect region and the fourth Hall effect region are arranged in such way that their planes of symmetry are parallel or identical.

12. A vertical Hall effect device according to claim 1, wherein the first contacts of the first Hall effect region, the second Hall effect region, the third Hall effect region and the fourth Hall effect region are facing away from the respective plane of symmetry in a same direction, wherein the second contacts of the first Hall effect region, the second Hall effect region, the third Hall effect region and the fourth Hall effect region are facing away from the respective plane of symmetry in an opposite direction.

13. A vertical Hall effect device according to claim 1, wherein at least one of said low ohmic connection paths is electrically connected to a biasing voltage source.

14. A vertical Hall effect device according to claim 1, wherein at least one of said low ohmic connection paths is electrically floating.

15. A vertical Hall effect device according to claim 1, wherein the vertical Hall effect device comprises an energy supply and measuring circuit configured to supply the at least four Hall effect regions with electrical energy and configured to measure at least one electrical Hall effect output signal responsive to a magnetic field.

16. A vertical Hall effect device according to claim 15, wherein the energy supply and measuring circuit is configured to supply the electrical energy to a first specific contact and a second specific contact of the first contacts and/or second contacts wherein the specific contacts are chosen differently in different modes of operation.

17. A vertical Hall effect device according to claim 15, wherein the energy supply and measuring circuit is configured to measure the at least one electrical Hall signal responsive to a magnetic field at a third specific contact of the first contacts and/or second contacts and at a fourth specific contact of the first contacts and/or second contacts, and wherein the specific contacts are chosen differently in different modes of operation.

18. A vertical Hall effect device according to claim 15, wherein each of the first contacts and each of the second contacts of the at least four Hall effect regions are connected individually to the energy supply and measuring circuit.

19. A vertical Hall effect device according to claim 15, wherein the energy supply and measuring circuit is configured

in such a way that in a first mode of operation

a first current is input to the first contact of the first Hall effect region,

a second current is input to the second contact of the second Hall effect region,

a third current is output at the first contact of the third Hall effect region,

a fourth current is output at the second contact of the fourth Hall effect region,

a first Hall voltage is measured from the first contact of the second Hall effect region to the second contact of the first Hall effect region,

a second Hall voltage is measured from the second contact of the third Hall effect region to the first contact of the fourth Hall effect region, and/or

in such a way that in a second mode of operation

a first current is input to the second contact of the first Hall effect region,

a second current is input to the first contact of the second Hall effect region,

a third current is output at the second contact of the third Hall effect region,

a fourth current is output at the first contact of the fourth Hall effect region,

a first Hall voltage is measured from the first contact of the first Hall effect region to the second contact of the second Hall effect region,

a second Hall voltage is measured from the second contact of the fourth Hall effect region to the first contact of the third Hall effect region, and/or

in such a way that in a third mode of operation

a first current is input to the first contact of the third Hall effect region,

a second current is input to the second contact of the fourth Hall effect region,

a third current is output at the first contact of the first Hall effect region,

a fourth current is output at the second contact of the second Hall effect region,

a first Hall voltage is measured from the second contact of the first Hall effect region to the first contact of the second Hall effect region,

a second Hall voltage is measured from the first contact of the fourth Hall effect region to the second contact of the third Hall effect region, and/or

in such way that in a fourth mode of operation

a first current is input to the second contact of the third Hall effect region,

a second current is input to the first contact of the fourth Hall effect region,

a third current is output at the second contact of the first Hall effect region,

a fourth current is output at the first contact of the second Hall effect region,

a first Hall voltage is measured from the second contact of the second Hall effect region to the first contact of the first Hall effect region,

a second Hall voltage is measured from the first contact of the third Hall effect region to the second contact of the fourth Hall effect region.

20. A vertical Hall effect device according to claim 19, wherein the energy supply and measuring circuit is configured to execute a measuring cycle having a first phase in which the device operates in the first mode of operation and having a second phase in which the device operates in the second mode of operations, wherein measurement results of the first phase and measurement results of the second phase are combined, or

wherein the energy supply and measuring circuit is configured to execute a measuring cycle having a first phase in which the device operates in the third mode of operation and having a second phase in which the device operates in the fourth mode of operations, wherein measurement results of the first phase and measurement results of the second phase are combined,

or wherein the energy supply and measuring circuit is configured to execute a measuring cycle having a first phase in which the device operates in the first mode of operation, having a second phase in which the device operates in the second mode of operations, having a third phase in which the device operates in the third mode of operation and a fourth phase in which the device operates in the fourth mode of operations, wherein measurement results of the first phase and measurement results of the second phase and measurement results of the third phase and measurement results of the fourth phase are combined.

21. A vertical Hall effect device according to claim 15, wherein the energy supply and measuring circuit is configured

in such way that in a first mode of operation

a first supply potential is supplied to the first contact of the first Hall effect region,

a second supply potential is supplied to the second contact of the second Hall effect region,

a third supply potential is supplied to the first contact of the third Hall effect region,

a fourth supply potential is supplied to the second contact of the fourth Hall effect region,

a first output current from the first contact of the second Hall effect region to the second contact of the first Hall effect region is measured,

a second output current from the second contact of the third Hall effect region to the first contact of the fourth Hall effect region is measured, and/or

in such way that in a second mode of operation

a first supply potential is supplied to the second contact of the first Hall effect region,

a second supply potential is supplied to the first contact of the second Hall effect region,

a third supply potential is supplied to the second contact of the third Hall effect region,

a fourth supply potential is supplied to the first contact of the fourth Hall effect region,

a first output current from the first contact of the first Hall effect region to the second contact of the second Hall effect region is measured,

a second output current from the second contact of the fourth Hall effect region to the first contact of the third Hall effect region is measured, and/or

in such way that in a third mode of operation

a first supply potential is supplied to the first contact of the third Hall effect region,

a second supply potential is supplied to the second contact of the fourth Hall effect region

a third supply potential is supplied to the first contact of the first Hall effect region,

a fourth supply potential is supplied to the second contact of the second Hall effect region,

a first output current from the second contact of the first Hall effect region to the first contact of the second Hall effect region is measured,

a second output current from the first contact of the fourth Hall effect region to the second contact of the third Hall effect region is measured, and/or

in such way that in a fourth mode of operation

a first supply potential is supplied to the second contact of the third Hall effect region,

a second supply potential is supplied to the first contact of the fourth Hall effect region,

a third supply potential is supplied to the second contact of the first Hall effect region,

a fourth supply potential is supplied to the first contact of the second Hall effect region,

a first output current is measured from the second contact of the second Hall effect region to the first contact of the first Hall effect region,

a second output current is measured from the first contact of the third Hall effect region to the second contact of the fourth Hall effect region.

22. A vertical Hall effect device according to claim 15, wherein the energy supply and measuring circuit is configured

in such a way that in a first mode of operation

the first terminal and the third terminal are used to supply the Hall effect regions with electrical energy, and the second terminal and the fourth terminal are used for tapping an electrical Hall output signal responsive to the magnetic field, and

in such a way that in a second mode of operation

the second terminal and the fourth terminal are used to supply the Hall effect regions with electrical energy, and the third terminal and the first terminal are used for tapping an electrical Hall output signal responsive to the magnetic field.

23. A vertical Hall effect device according to claim 22, wherein the energy supply and measuring circuit is configured to execute a measuring cycle having a first phase in which the device operates in the first mode of operation and having a second phase in which the device operates in the second mode of operations, wherein measurement results of the first phase and measurement results of the second phase are combined, or

wherein the energy supply and measuring circuit is configured to execute a measuring cycle having a first phase in which the device operates in the third mode of operation and having a second phase in which the device operates in the fourth mode of operations, wherein measurement results of the first phase and measurement results of the second phase are combined,

or wherein the energy supply and measuring circuit is configured to execute a measuring cycle having a first phase in which the device operates in the first mode of operation, having a second phase in which the device operates in the second mode of operations, having a third phase in which the device operates in the third mode of operation and a fourth phase in which the device operates in the fourth mode of operations, wherein measurement results of the first phase and measurement results of the second phase and measurement results of the third phase and measurement results of the fourth phase are combined.

24. A vertical Hall effect device according to claim 1, wherein each of the first contacts and each of the second contacts of the at least four Hall effect regions are connectable or connected via a first terminal, a second terminal, a third terminal and a fourth terminal to the energy supply and measuring circuit, wherein the first terminal is connectable or connected to the second contact of the first Hall effect region and to the first contact of the second Hall effect region, wherein the second terminal is connectable or connected to the second contact of the second Hall effect region and to the first contact of the third Hall effect region, wherein the third terminal is connectable or connected to the second contact of the third Hall effect region and to the first contact of the forth Hall effect region, wherein the fourth terminal is connectable or connected to the second contact of the fourth Hall effect region and to the first contact of the first Hall effect region.

25. A vertical Hall effect device according to claim 1, wherein low ohmic is defined as:

having an electrical conductivity which is at least 10 times, preferred at least 30 times, more preferred at least 100 times of the conductivity of the Hall effect region.

26. A system comprising at least two vertical Hall effect devices, each of the at least two vertical Hall effect devices comprises:

at least four Hall effect regions comprising a first Hall effect region, a second Hall effect region, a third Hall effect region and a fourth Hall effect region, which are at least partly decoupled from each other;

wherein each of the at least four Hall effect regions has a first face and a second face opposite of the first face;

wherein each of the at least four Hall effect regions has on the first face a first contact as well as a second contact, wherein the first contact and the second contact are placed symmetrically with respect to a plane of symmetry at the respective Hall effect region, wherein the plane of symmetry is orientated perpendicular to a straight line between the first contact and the second contact of the respective Hall effect region;

wherein each of the at least four Hall effect regions has at least one contact area, which is placed at least in an area around the respective plane of symmetry, wherein low ohmic connection means comprise at least one low ohmic connecting path connecting the contact areas of the at least four Hall effect regions,

wherein the vertical Hall effect devices are connected in series so that a supply current flowing through a first vertical Hall device of the at least two Hall effect devices is flowing through a second Hall effect device of the at least two Hall effect devices.

27. A system according to the claim 26, wherein each of the at least two vertical Hall effect devices provides at least one electrical Hall output signal, wherein the electrical Hall output signals of the at least two vertical Hall effect devices are combined by a combining unit.