Accoustic resonator having composite electrodes with integrated lateral features

• US 9,425,764 B2
• Filed: 10/25/2012
• Issued: 08/23/2016
• Est. Priority Date: 10/25/2012
• Status: Active Grant

• Current Assignee: Avago Technologies International Sales Pte Limited (Broadcom, Inc.)
• Original Assignee: Avago Technologies General IP PTE Limited (Broadcom, Inc.)
• Inventors: Burak, Dariusz, Nikkel, Phil, Feng, Chris, Choy, John
• Primary Examiner(s): Summons, Barbara
• Application Number:
  US13/660,941
• Publication Number:
  US 20140118088A1
• Time in Patent Office: 1,398 Days
• Field of Search: 333/187, 333/189, 310/312
• US Class Current: 1/1
• CPC Class Codes: H03H 9/02118 of lateral leakage between adjacent resonators
• CPC Class Codes: H03H 9/131 consisting of a multilayered structure
• CPC Class Codes: H03H 9/173 Air-gaps
• CPC Class Codes: H03H 9/175 Acoustic mirrors

Abstract

A bulk acoustic wave (BAW) resonator device includes a bottom electrode on a substrate over one of a cavity and an acoustic reflector, a piezoelectric layer on the bottom electrode, and a top electrode on the piezoelectric layer. At one of the bottom electrode and the top electrode is a composite electrode having an integrated lateral feature, arranged between planar top and bottom surfaces of the composite electrode and configured to create a cut-off frequency mismatch.

Claims

1. A bulk acoustic wave (BAW) resonator device, comprising:

a bottom composite electrode on a substrate over one of a cavity and an acoustic reflector, the bottom composite electrode including a bottom inner portion and a bottom integrated frame, the bottom integrated frame being arranged between planar top and bottom surfaces of the bottom composite electrode and configured to create at least one of a cut-off frequency mismatch and an acoustic impedance mismatch, wherein the bottom integrated frame and the bottom inner portion have substantially the same thickness;

a piezoelectric layer on the bottom electrode; and

a top composite electrode on the piezoelectric layer, the top composite electrode including a top inner portion and a top integrated frame, the top integrated frame being arranged between planar top and bottom surfaces of the top composite electrode and configured to create at least one of a cut-off frequency mismatch and an acoustic impedance mismatch, wherein the top integrated frame and the top inner portion have substantially the same thickness;

wherein the bottom and top integrated frames are positioned adjacent the piezoelectric layer at outer regions of the bottom and top composite electrodes, respectively, and substantially surround the bottom and top inner portions located at center regions of the bottom and top composite electrodes, respectively, and

wherein an inner edge of the bottom integrated frame, adjacent the bottom inner portion, is not vertically aligned with an inner edge of the top integrated frame, adjacent the top inner portion.

2. The BAW resonator device of claim 1, wherein the top integrated frame comprises an integrated low velocity frame, and the bottom integrated frame comprises an integrated high velocity frame.

3. The BAW resonator device of claim 2, wherein the integrated low velocity frame is formed of a first material and the integrated high velocity frame is formed of a second material, the first material having a lower sound velocity than the second material.

4. The BAW resonator device of claim 1, wherein the top integrated frame comprises an integrated high velocity frame, and the bottom integrated frame comprises an integrated low velocity frame.

5. The BAW resonator device of claim 1, wherein the inner edge of the top integrated frame is vertically aligned with an outer edge of bottom integrated frame.

6. A thin film bulk acoustic resonator (FBAR), comprising:

a bottom electrode on a substrate, the bottom electrode being formed of a first material and a second material, wherein the first material has a lower sound velocity than the second material;

a piezoelectric layer on the bottom electrode;

a top electrode on the piezoelectric layer, the top electrode being formed of the first material and the second material;

one of an integrated low velocity frame formed by the first material or an integrated high velocity frame formed by the second material within the bottom electrode at an outer region of the FBAR; and

one of an integrated low velocity frame formed by the first material or an integrated high velocity frame formed by the second material within the top electrode at an outer region of the FBAR.

7. The FBAR of claim 6, wherein a thickness of the integrated low velocity frame is the same as a thickness of the top electrode.

8. The FBAR of claim 6, wherein a thickness of the integrated low velocity frame is less than a thickness of the top electrode.

9. A bulk acoustic wave (BAW) resonator device, comprising:

a bottom electrode on a substrate over one of a cavity and an acoustic reflector;

a piezoelectric layer on the bottom electrode; and

a top electrode on the piezoelectric layer;

wherein at least one of the bottom electrode and the top electrode comprises a composite electrode having an integrated frame, arranged between planar top and bottom surfaces of the composite electrode and configured to create at least one of a cut-off frequency mismatch and an acoustic impedance mismatch, and

wherein the composite electrode comprises an inside layer adjacent the piezoelectric layer and an outside layer adjacent the inside layer, and the integrated frame is located at an outer region of the composite electrode, and extending from the inside layer through the outside layer away from the piezoelectric layer or extending from the outside layer through the inside layer toward the piezoelectric layer.

10. The BAW resonator device of claim 9, wherein the integrated frame comprises an integrated low velocity frame located at the outer region of the composite electrode and extending from the inside layer through the outside layer away from the piezoelectric layer.

11. The BAW resonator device of claim 10, wherein the inside layer is formed of a first material and the outside layer is formed of a second material, the first material having a lower sound velocity than the second material.

12. The BAW resonator device of claim 9, wherein the integrated frame comprises an integrated low velocity frame located at the outer region of the composite electrode and extending from the outside layer through the inside layer toward the piezoelectric layer.

13. The BAW resonator device of claim 12, wherein the outside layer is formed of a first material and the inside layer is formed of a second material, the first material having a lower sound velocity than the second material.

14. The BAW resonator device of claim 9, wherein the integrated frame comprises an integrated high velocity frame located at the outer region of the composite electrode and extending from the inside layer through the outside layer away from the piezoelectric layer.

15. The BAW resonator device of claim 14, wherein the inside layer is formed of a second material and the outside layer is formed of a first material, the first material having a lower sound velocity than the second material.

16. The BAW resonator device of claim 9, wherein the integrated frame comprises an integrated high velocity frame located at the outer region of the composite electrode and extending from the outside layer through the inside layer toward the piezoelectric layer.

17. The BAW resonator device of claim 16, wherein the outside layer is formed of a second material and the inside layer is formed of a first material, the first material having a lower sound velocity than the second material.