Test method and test arrangement
First Claim
1. A test method, comprising:
- providing a workpiece comprising a transistor to be tested, the transistor comprising a plurality of cells electrically connected in parallel, each of the plurality of cells comprising at least one trench, at least one first terminal electrode region and at least one second terminal electrode region, at least one gate electrode, and at least one additional electrode disposed at least partially in the at least one trench, wherein an electrical potential of the at least one additional electrode is separately controllable from electrical potentials of the at least one first terminal electrode region, the at least one second terminal electrode region and the at least one gate electrode; and
applying a plurality of test potentials to at least one of the at least one additional electrodes of the plurality of cells to detect defective cells among the plurality of cellswherein respectively for each of the plurality of cells, a potential of the at least one additional electrode is electrically insulated from potentials of each of the at least one first terminal electrode region, the at least one second terminal electrode region, and the at least one gate electrode,wherein the first terminal electrode region is a source region and the second terminal electrode region is a drain region or the first terminal electrode region is a drain region and the second terminal electrode region is a source region.
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Abstract
A test method in accordance with one or more embodiments may include: providing a semiconductor device to be tested, the semiconductor device including at least one device cell, the at least one device cell having at least one trench, at least one first terminal electrode region and at least one second terminal electrode region, at least one gate electrode, and at least one additional electrode disposed at least partially in the at least one trench, wherein an electrical potential of the at least one additional electrode may be controlled separately from electrical potentials of the at least one first terminal electrode region, the at least one second terminal electrode region and the at least one gate electrode; and applying at least one electrical test potential to at least the at least one additional electrode to detect defects in the at least one device cell.
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Citations
23 Claims
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1. A test method, comprising:
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providing a workpiece comprising a transistor to be tested, the transistor comprising a plurality of cells electrically connected in parallel, each of the plurality of cells comprising at least one trench, at least one first terminal electrode region and at least one second terminal electrode region, at least one gate electrode, and at least one additional electrode disposed at least partially in the at least one trench, wherein an electrical potential of the at least one additional electrode is separately controllable from electrical potentials of the at least one first terminal electrode region, the at least one second terminal electrode region and the at least one gate electrode; and applying a plurality of test potentials to at least one of the at least one additional electrodes of the plurality of cells to detect defective cells among the plurality of cells wherein respectively for each of the plurality of cells, a potential of the at least one additional electrode is electrically insulated from potentials of each of the at least one first terminal electrode region, the at least one second terminal electrode region, and the at least one gate electrode, wherein the first terminal electrode region is a source region and the second terminal electrode region is a drain region or the first terminal electrode region is a drain region and the second terminal electrode region is a source region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A test method, comprising:
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providing a semiconductor device to be tested, the semiconductor device being a diode comprising at least one device cell, the at least one device cell comprising; at least one trench, at least one first terminal electrode region having a first conductivity type, at least one second terminal electrode region having a second conductivity type that is opposite the first conductivity type, a body region formed between the first terminal electrode region and the second terminal electrode region, wherein the body region has the same conductivity type as the first terminal electrode region, and at least one electrode disposed at least partially in the at least one trench, wherein an electrical potential of the at least one electrode is separately controllable from electrical potentials of the at least one first terminal electrode region and the at least one second terminal electrode region; and applying at least one electrical test potential to at least the at least one electrode to detect defects in the at least one device cell, wherein respectively for each of the at least one device cell, a potential of the at least one electrode is electrically insulated from potentials of each of the at least one first terminal electrode region, and the at least one second terminal electrode region. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23)
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Specification