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One-time programmable memory and method for making the same

  • US 9,431,254 B2
  • Filed: 04/08/2015
  • Issued: 08/30/2016
  • Est. Priority Date: 06/21/2010
  • Status: Active Grant
First Claim
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1. A method of manufacturing a one-time programmable non-volatile memory cell comprising:

  • forming a buried bitline in a substrate, the buried bitline of a first conductivity type;

    forming a dielectric layer over at least a portion of the buried bitline;

    forming a polysilicon gate layer over at least a portion of the dielectric layer;

    doping the polysilicon gate layer to cause the polysilicon gate layer to be a second conductivity type; and

    after the doping, etching the polysilicon gate layer to form a conductive gate over the dielectric layer, the conductive gate formed over a channel region under the conductive gate and dielectric layer.

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