Salicided structure to integrate a flash memory device with a high κ, metal gate logic device
First Claim
1. An integrated circuit for an embedded flash memory device, said integrated circuit comprising:
- a semiconductor substrate including a memory region and a logic region adjacent to the memory region;
a logic device arranged over the logic region and including a metal gate separated from the semiconductor substrate by a material having a dielectric constant exceeding 3.9;
a flash memory cell device arranged over the memory region, wherein the flash memory cell device includes a first memory cell gate, a second memory cell gate, and a dielectric region arranged between neighboring sidewalls of the first and second memory cell gates, and wherein a top surface of the first memory cell gate is recessed below a top surface of the metal gate; and
a silicide contact pad arranged on the first memory cell gate, wherein the silicide contact pad is recessed relative to top surfaces of the dielectric region, the second memory cell gate, and the metal gate.
1 Assignment
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Accused Products
Abstract
An integrated circuit for an embedded flash memory device is provided. A semiconductor substrate includes a memory region and a logic region adjacent to the memory region. A logic device is arranged over the logic region and includes a metal gate separated from the semiconductor substrate by a material having a dielectric constant exceeding 3.9. A flash memory cell device is arranged over the memory region. The flash memory cell device includes a first memory cell gate, a second memory cell gate, and a dielectric region arranged between neighboring sidewalls of the first and second memory cell gates. A silicide contact pad is arranged over a top surface of the first memory cell gate. The silicide contact pad is recessed relative to top surfaces of the dielectric region, the second memory cell gate and the metal gate. A method of manufacturing the integrated circuit is also provided.
16 Citations
20 Claims
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1. An integrated circuit for an embedded flash memory device, said integrated circuit comprising:
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a semiconductor substrate including a memory region and a logic region adjacent to the memory region; a logic device arranged over the logic region and including a metal gate separated from the semiconductor substrate by a material having a dielectric constant exceeding 3.9; a flash memory cell device arranged over the memory region, wherein the flash memory cell device includes a first memory cell gate, a second memory cell gate, and a dielectric region arranged between neighboring sidewalls of the first and second memory cell gates, and wherein a top surface of the first memory cell gate is recessed below a top surface of the metal gate; and a silicide contact pad arranged on the first memory cell gate, wherein the silicide contact pad is recessed relative to top surfaces of the dielectric region, the second memory cell gate, and the metal gate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. An integrated circuit for an embedded flash memory device, said integrated circuit comprising:
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a semiconductor substrate including a memory region and a logic region adjacent to the memory region, the memory region including a common source/drain region and a pair of individual source/drain regions arranged on opposite sides of the common source/drain region; a logic device arranged over the logic region and including a metal gate separated from the semiconductor substrate by a material having a dielectric constant exceeding 3.9; and a pair of flash memory cell devices arranged over the memory region, wherein each flash memory cell device corresponds to one of the individual source/drain regions and includes; a select gate and a memory gate arranged between the common source/drain region and the corresponding individual source/drain region; a charge trapping dielectric arranged between neighboring sidewalls of the memory and select gates, and arranged under the memory gate; and a silicide contact pad arranged over a top surface of the memory gate, wherein a top surface of the silicide contact pad is recessed relative to top surfaces of the charge trapping dielectric, the select gate, and the metal gate. - View Dependent Claims (11, 12, 13, 14)
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15. An integrated circuit comprising:
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a logic device arranged on a semiconductor substrate, wherein the logic device comprises a metal gate arranged over and spaced from the semiconductor substrate; a memory cell device arranged on the semiconductor substrate and laterally spaced from the logic device, wherein the memory cell device includes a first memory cell gate laterally spaced from a second memory cell gate; and a silicide contact pad arranged on a top surface of the first memory cell gate and recessed below substantially coplanar top surfaces of the metal and second memory cell gates. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification