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Semiconductor device and manufacturing method of the same

  • US 9,431,260 B2
  • Filed: 12/08/2014
  • Issued: 08/30/2016
  • Est. Priority Date: 12/11/2013
  • Status: Active Grant
First Claim
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1. A manufacturing method of a semiconductor device having an N-type semiconductor layer on a P-type semiconductor layer, the manufacturing method comprising:

  • a dry etching process of performing dry etching to go through the N-type semiconductor layer in a thickness direction in order to expose a surface of the P-type semiconductor layer; and

    an annealing process of annealing the P-type semiconductor layer in an atmosphere comprising oxygen, after the dry etching process,wherein a width of the P-type semiconductor layer exposed by the dry etching process is not less than 1% of a half pitch of the semiconductor device.

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