Semiconductor device

• US 9,431,429 B2
• Filed: 06/10/2015
• Issued: 08/30/2016
• Est. Priority Date: 04/09/2010
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Primary Examiner(s): Harrison, Monica D
• Application Number:
  US14/735,235
• Publication Number:
  US 20150357444A1
• Time in Patent Office: 447 Days
• Field of Search: 438/104
• US Class Current: 1/1
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 21/441 Deposition of conductive or insulating materials for electrodes
• CPC Class Codes: H01L 21/46 Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 manufacture of electrodes thereon H01L21/44
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/42384 for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78606 with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

An object is to provide a semiconductor device using an oxide semiconductor having stable electric characteristics and high reliability. A transistor including the oxide semiconductor film in which a top surface portion of the oxide semiconductor film is provided with a metal oxide film containing a constituent similar to that of the oxide semiconductor film and functioning as a channel protective film is provided. In addition, the oxide semiconductor film used for an active layer of the transistor is an oxide semiconductor film highly purified to be electrically i-type (intrinsic) by heat treatment in which impurities such as hydrogen, moisture, a hydroxyl group, or a hydride are removed from the oxide semiconductor and oxygen which is a major constituent of the oxide semiconductor and is reduced concurrently with a step of removing impurities is supplied.

Claims

1. A method for forming a semiconductor device comprising the steps of:

forming a gate electrode;

forming a gate insulating film over the gate electrode;

forming an oxide semiconductor film comprising a channel formation region over the gate insulating film;

forming a metal oxide film over and in contact with the oxide semiconductor film;

performing a heat treatment after forming the metal oxide film;

forming a source electrode and a drain electrode over the metal oxide film, the source electrode and the drain electrode being in contact with the oxide semiconductor film; and

forming an electrode over the metal oxide film and overlapping with the gate electrode,

wherein the oxide semiconductor film contains one or more metal elements,

wherein the metal oxide film contains at least one of the metal elements contained in the oxide semiconductor film, and

wherein a side surface of the oxide semiconductor film is in contact with the metal oxide film.

2. The method for forming a semiconductor device according to claim 1, further comprising the step of:

performing a dehydration treatment or a dehydrogenation treatment on the oxide semiconductor film,

wherein the dehydration treatment or the dehydrogenation treatment is performed at a temperature of 250°

C. to 700°

C.

3. The method for forming a semiconductor device according to claim 1,

wherein oxygen is supplied to the oxide semiconductor film from the metal oxide film in the step of the heat treatment, and

wherein the channel formation region comprises an intrinsic oxide semiconductor after the heat treatment.

4. The method for forming a semiconductor device according to claim 1,

wherein each of the oxide semiconductor film and the metal oxide film is formed using a sputtering method.

5. The method for forming a semiconductor device according to claim 1, wherein the metal oxide film has a larger band gap than the oxide semiconductor film.

6. The method for forming a semiconductor device according to claim 1,

wherein the oxide semiconductor film contains indium, gallium and zinc, and

wherein the metal oxide film contains at least gallium.

7. A method for forming a semiconductor device comprising the steps of:

forming an oxide semiconductor film comprising a channel formation region;

forming a metal oxide film over and in contact with the oxide semiconductor film;

performing a heat treatment after forming the metal oxide film;

forming a source electrode and a drain electrode over the metal oxide film, the source electrode and the drain electrode being in contact with the oxide semiconductor film; and

forming an electrode over the metal oxide film,

wherein the electrode overlaps with the channel formation region with the metal oxide film interposed therebetween,

wherein the oxide semiconductor film contains one or more metal elements,

wherein the metal oxide film contains at least one of the metal elements contained in the oxide semiconductor film, and

wherein a side surface of the oxide semiconductor film is in contact with the metal oxide film.

8. The method for forming a semiconductor device according to claim 7, further comprising the step of:

performing a dehydration treatment or a dehydrogenation treatment on the oxide semiconductor film,

wherein the dehydration treatment or the dehydrogenation treatment is performed at a temperature of 250°

C. to 700°

C.

9. The method for forming a semiconductor device according to claim 7,

wherein oxygen is supplied to the oxide semiconductor film from the metal oxide film in the step of the heat treatment, and

wherein the channel formation region comprises an intrinsic oxide semiconductor after the heat treatment.

10. The method for forming a semiconductor device according to claim 7,

wherein each of the oxide semiconductor film and the metal oxide film is formed using a sputtering method.

11. The method for forming a semiconductor device according to claim 7, wherein the metal oxide film has a larger band gap than the oxide semiconductor film.

12. The method for forming a semiconductor device according to claim 7,

wherein the oxide semiconductor film contains indium, gallium and zinc, and

wherein the metal oxide film contains at least gallium.

13. A method for forming a semiconductor device comprising the steps of:

forming a gate electrode;

forming a gate insulating film over the gate electrode;

forming a first metal oxide film over the gate insulating film;

forming an oxide semiconductor film comprising a channel formation region over the first metal oxide film;

forming a second metal oxide film over and in contact with the oxide semiconductor film;

performing a heat treatment after forming the second metal oxide film; and

forming a source electrode and a drain electrode over the second metal oxide film, the source electrode and the drain electrode being in contact with the oxide semiconductor film,

wherein the oxide semiconductor film contains one or more metal elements,

wherein each of the first metal oxide film and the second metal oxide film contains at least one of the metal elements contained in the oxide semiconductor film, and

wherein a side surface of the oxide semiconductor film is in contact with the second metal oxide film.

14. The method for forming a semiconductor device according to claim 13, further comprising the step of:

performing a dehydration treatment or a dehydrogenation treatment on the oxide semiconductor film,

wherein the dehydration treatment or the dehydrogenation treatment is performed at a temperature of 250°

C. to 700°

C.

15. The method for forming a semiconductor device according to claim 13,

wherein oxygen is supplied to the oxide semiconductor film from the first metal oxide film and the second metal oxide film in the step of the heat treatment, and

wherein the channel formation region comprises an intrinsic oxide semiconductor after the heat treatment.

16. The method for forming a semiconductor device according to claim 13,

wherein each of the oxide semiconductor film, the first metal oxide film and the second metal oxide film is formed using a sputtering method.

17. The method for forming a semiconductor device according to claim 13, wherein each of the first metal oxide film and the second metal oxide film has a larger band gap than the oxide semiconductor film.

18. The method for forming a semiconductor device according to claim 13,

wherein the oxide semiconductor film contains indium, gallium and zinc, and

wherein each of the first metal oxide film and the second metal oxide film contains at least gallium.

19. The method for forming a semiconductor device according to claim 13, further comprising the steps of:

forming an electrode over the second metal oxide film and overlapping with the gate electrode.