Light-emitting device and method for manufacturing the same

• US 9,431,465 B2
• Filed: 01/06/2015
• Issued: 08/30/2016
• Est. Priority Date: 09/04/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Sakata, Junichiro, Sakakura, Masayuki, Oikawa, Yoshiaki, Okazaki, Kenichi, Maruyama, Hotaka
• Primary Examiner(s): Parker, Kenneth
• Assistant Examiner(s): Cruz, Leslie Pilar
• Application Number:
  US14/590,359
• Publication Number:
  US 20150123125A1
• Time in Patent Office: 602 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/127 with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
• CPC Class Codes: H01L 29/247 Amorphous materials
• CPC Class Codes: H01L 29/78618 characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure silicide contacts, electrodes in general H01L29/458
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621
• CPC Class Codes: H10K 50/80 Constructional details
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs
• CPC Class Codes: H10K 59/131 Interconnections, e.g. wiring lines or terminals
• CPC Class Codes: H10K 59/38 comprising colour filters or colour changing media [CCM]

Abstract

An object is to improve reliability of a light-emitting device. A light-emitting device has a driver circuit portion including a transistor for a driver circuit and a pixel portion including a transistor for a pixel over one substrate. The transistor for the driver circuit and the transistor for the pixel are inverted staggered transistors each including an oxide semiconductor layer in contact with part of an oxide insulating layer. In the pixel portion, a color filter layer and a light-emitting element are provided over the oxide insulating layer. In the transistor for the driver circuit, a conductive layer overlapping with a gate electrode layer and the oxide semiconductor layer is provided over the oxide insulating layer. The gate electrode layer, a source electrode layer, and a drain electrode layer are formed using metal conductive films.

Claims

1. A light emitting device comprising:

a transistor comprising a first gate electrode layer, a first gate insulating layer, an oxide semiconductor layer, a source electrode layer, a drain electrode layer, a second gate insulating layer, and a second gate electrode layer;

a light emitting portion comprising a color filter layer and a light emitting element; and

a connection electrode layer in contact with an electrode layer of the light emitting element,

wherein the first gate electrode layer and the second gate electrode layer overlap each other,

wherein the first gate electrode layer is electrically connected to the second gate electrode layer, and

wherein the connection electrode layer is formed from a same layer as the second gate electrode layer.

2. The light emitting device according to claim 1, wherein the oxide semiconductor layer comprises indium, gallium, and zinc.

3. The light emitting device according to claim 1, wherein the oxide semiconductor layer comprises indium, tin, and zinc.

4. The light emitting device according to claim 1, wherein the oxide semiconductor layer comprises a region being in an oxygen-excess state.

5. The light emitting device according to claim 1, wherein the second gate insulating layer comprises stacked layers selected from a silicon oxide film, a silicon oxynitride film, a silicon nitride film, a silicon nitride oxide film, an aluminum oxide film, and an aluminum oxynitride film.

6. The light emitting device according to claim 1, wherein the light emitting element is over the color filter layer.

7. The light emitting device according to claim 1, wherein emission color of the light emitting element is white.

8. The light emitting device according to claim 1,

wherein the light emitting element comprises a first light emitting unit and a second light emitting unit, and

wherein a charge generation layer is provided between the first light emitting unit and the second light emitting unit.

9. The light emitting device according to claim 1,

wherein the light emitting element comprises a first light emitting unit and a second light emitting unit,

wherein emission color of the first light emitting unit is blue, and

wherein emission color of the second light emitting unit is yellow.

10. The light emitting device according to claim 1, wherein the transistor is included in a driver circuit portion.

11. A light emitting device comprising:

a transistor comprising a first gate electrode layer, a first gate insulating layer, an oxide semiconductor layer, a source electrode layer, a drain electrode layer, a second gate insulating layer, and a second gate electrode layer;

a light emitting portion comprising a color filter layer and a light emitting element over the color filter layer; and

a connection electrode layer in contact with an electrode layer of the light emitting element,

wherein the first gate electrode layer and the second gate electrode layer overlap each other,

wherein the first gate electrode layer is electrically connected to the second gate electrode layer, and

wherein the connection electrode layer is formed from a same layer as the second gate electrode layer.

12. The light emitting device according to claim 11, wherein the oxide semiconductor layer comprises indium, gallium, and zinc.

13. The light emitting device according to claim 11, wherein the oxide semiconductor layer comprises indium, tin, and zinc.

14. The light emitting device according to claim 11, wherein the oxide semiconductor layer comprises a region being in an oxygen-excess state.

15. The light emitting device according to claim 11, wherein the second insulating gate layer comprises stacked layers selected from a silicon oxide film, a silicon oxynitride film, a silicon nitride film, a silicon nitride oxide film, an aluminum oxide film, and an aluminum oxynitride film.

16. The light emitting device according to claim 11, wherein emission color of the light emitting element is white.

17. The light emitting device according to claim 11,

wherein the light emitting element comprises a first light emitting unit and a second light emitting unit, and

wherein a charge generation layer is provided between the first light emitting unit and the second light emitting unit.

18. The light emitting device according to claim 11,

wherein the light emitting element comprises a first light emitting unit and a second light emitting unit,

wherein emission color of the first light emitting unit is blue, and

wherein emission color of the second light emitting unit is yellow.