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Light-emitting device and method for manufacturing the same

  • US 9,431,465 B2
  • Filed: 01/06/2015
  • Issued: 08/30/2016
  • Est. Priority Date: 09/04/2009
  • Status: Active Grant
First Claim
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1. A light emitting device comprising:

  • a transistor comprising a first gate electrode layer, a first gate insulating layer, an oxide semiconductor layer, a source electrode layer, a drain electrode layer, a second gate insulating layer, and a second gate electrode layer;

    a light emitting portion comprising a color filter layer and a light emitting element; and

    a connection electrode layer in contact with an electrode layer of the light emitting element,wherein the first gate electrode layer and the second gate electrode layer overlap each other,wherein the first gate electrode layer is electrically connected to the second gate electrode layer, andwherein the connection electrode layer is formed from a same layer as the second gate electrode layer.

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