Light-emitting device and method for manufacturing the same
First Claim
1. A light emitting device comprising:
- a transistor comprising a first gate electrode layer, a first gate insulating layer, an oxide semiconductor layer, a source electrode layer, a drain electrode layer, a second gate insulating layer, and a second gate electrode layer;
a light emitting portion comprising a color filter layer and a light emitting element; and
a connection electrode layer in contact with an electrode layer of the light emitting element,wherein the first gate electrode layer and the second gate electrode layer overlap each other,wherein the first gate electrode layer is electrically connected to the second gate electrode layer, andwherein the connection electrode layer is formed from a same layer as the second gate electrode layer.
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Abstract
An object is to improve reliability of a light-emitting device. A light-emitting device has a driver circuit portion including a transistor for a driver circuit and a pixel portion including a transistor for a pixel over one substrate. The transistor for the driver circuit and the transistor for the pixel are inverted staggered transistors each including an oxide semiconductor layer in contact with part of an oxide insulating layer. In the pixel portion, a color filter layer and a light-emitting element are provided over the oxide insulating layer. In the transistor for the driver circuit, a conductive layer overlapping with a gate electrode layer and the oxide semiconductor layer is provided over the oxide insulating layer. The gate electrode layer, a source electrode layer, and a drain electrode layer are formed using metal conductive films.
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Citations
18 Claims
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1. A light emitting device comprising:
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a transistor comprising a first gate electrode layer, a first gate insulating layer, an oxide semiconductor layer, a source electrode layer, a drain electrode layer, a second gate insulating layer, and a second gate electrode layer; a light emitting portion comprising a color filter layer and a light emitting element; and a connection electrode layer in contact with an electrode layer of the light emitting element, wherein the first gate electrode layer and the second gate electrode layer overlap each other, wherein the first gate electrode layer is electrically connected to the second gate electrode layer, and wherein the connection electrode layer is formed from a same layer as the second gate electrode layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A light emitting device comprising:
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a transistor comprising a first gate electrode layer, a first gate insulating layer, an oxide semiconductor layer, a source electrode layer, a drain electrode layer, a second gate insulating layer, and a second gate electrode layer; a light emitting portion comprising a color filter layer and a light emitting element over the color filter layer; and a connection electrode layer in contact with an electrode layer of the light emitting element, wherein the first gate electrode layer and the second gate electrode layer overlap each other, wherein the first gate electrode layer is electrically connected to the second gate electrode layer, and wherein the connection electrode layer is formed from a same layer as the second gate electrode layer. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18)
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Specification