Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE)

• US 9,431,477 B2
• Filed: 08/05/2013
• Issued: 08/30/2016
• Est. Priority Date: 07/17/2009
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Kryliouk, Olga, Melnik, Yuriy, Kojiri, Hidehiro, Ishikawa, Tetsuya
• Primary Examiner(s): LUKE, DANIEL M
• Application Number:
  US13/959,469
• Publication Number:
  US 20130320353A1
• Time in Patent Office: 1,121 Days
• Field of Search: 257/E29.105
• US Class Current: 1/1
• CPC Class Codes: H01L 21/0237 Materials
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/0243 Surface structure
• CPC Class Codes: H01L 21/02433 Crystal orientation
• CPC Class Codes: H01L 21/02439 Materials
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/02488 Insulating materials
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02639 Preparation of substrate for selective deposition
• CPC Class Codes: H01L 21/02647 Lateral overgrowth
• CPC Class Codes: H01L 29/04 characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes characterised by physical imperfections H01L29/30
• CPC Class Codes: H01L 29/045 by their particular orientation of crystalline planes
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/16 with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

A method of depositing a high quality low defect single crystalline Group III-Nitride film. A patterned substrate having a plurality of features with inclined sidewalls separated by spaces is provided. A Group III-Nitride film is deposited by a hydride vapor phase epitaxy (HVPE) process over the patterned substrate. The HVPE deposition process forms a Group III-Nitride film having a first crystal orientation in the spaces between features and a second different crystal orientation on the inclined sidewalls. The first crystal orientation in the spaces subsequently overgrows the second crystal orientation on the sidewalls and in the process turns over and terminates treading dislocations formed in the first crystal orientation.

Claims

1. A semiconductor device comprising:

a patterned substrate having a plurality of spaced apart features separated by a space wherein said plurality of features have inclined sidewalls, wherein said plurality of features is above a surface of the substrate in said space; and

a Group III-Nitride film formed on said patterned substrate wherein said Group III-Nitride film has a first crystal orientation in said space between said plurality of features and wherein said Group III-Nitride film has a second crystal orientation on said inclined sidewalls of said features wherein the second crystal orientation is different than the first crystal orientation, and wherein said first crystal orientation formed in said space is formed on and over said second crystal orientation formed on said inclined sidewalls of said features.

2. The semiconductor device of claim 1 wherein a plurality of voids are formed between said first crystal orientation and said second crystal orientation.

3. The semiconductor device of claim 1 wherein said Group III-Nitride film having said second crystal orientation has a thickness between 0.1-1.0 microns.

4. The semiconductor device of claim 1 wherein said inclined sidewalls of said features are inclined at an angle between 30°

-60°

from said substrate.

5. The semiconductor device of claim 1 wherein said patterned substrate is a patterned sapphire substrate.

6. The semiconductor device of claim 5 wherein the sapphire substrate is a sapphire substrate with an off-cut angle from the c-plane greater than 0.35°

.

7. The semiconductor device of claim 1 further comprising a buffer layer formed between said patterned substrate and said Group III-Nitride.

8. The semiconductor device of claim 7 wherein said substrate is a sapphire substrate wherein said buffer layer comprises aluminum nitride, and wherein said Group III-Nitride is gallium nitride.

9. A semiconductor device comprising:

a patterned substrate having a plurality of spaced apart features separated by a space wherein said plurality of features have inclined sidewalls; and

a Group III-Nitride film formed on said patterned substrate wherein said Group III-Nitride film has a first crystal orientation in said space between said plurality of features and wherein said Group III-Nitride film has a second crystal orientation on said inclined sidewalls of said features, wherein said Group III-Nitride film having said second crystal orientation on said inclined sidewalls is a micro/nanocrystalline film and wherein said first crystal orientation is formed on said second crystal orientation.

10. The semiconductor device of claim 9 wherein a plurality of voids are formed between said first crystal orientation and said second crystal orientation.

11. The semiconductor device of claim 9 wherein said Group III-Nitride film having said second crystal orientation has a thickness between 0.1-1.0 microns.

12. The semiconductor device of claim 9 wherein said inclined sidewalls of said features are inclined at an angle between 30°

-60°

from said substrate.

13. The semiconductor device of claim 9 wherein said patterned substrate is a patterned sapphire substrate.

14. The semiconductor device of claim 13 wherein the sapphire substrate is a sapphire substrate with an off-cut angle from the c-plane greater than 0.35°

.

15. The semiconductor device of claim 9 further comprising a buffer layer formed between said patterned substrate and said Group III-Nitride.

16. The semiconductor device of claim 15 wherein said substrate is a sapphire substrate wherein said buffer layer comprises aluminum nitride, and wherein said Group III-Nitride is gallium nitride.