×

Superjunction structures for power devices and methods of manufacture

  • US 9,431,481 B2
  • Filed: 09/19/2014
  • Issued: 08/30/2016
  • Est. Priority Date: 09/19/2008
  • Status: Active Grant
First Claim
Patent Images

1. A power device comprising:

  • at least one epitaxial layer of a first conductivity type;

    an active region;

    a termination region surrounding the active region;

    a plurality of trenches disposed in the at least one epitaxial layer; and

    silicon material of a second conductivity type disposed in the plurality of trenches, the silicon material of the second conductivity type, together with a plurality of mesas defined in the at least one epitaxial layer by the plurality of trenches, defining a plurality of concentric octagon-shaped pillars of alternating conductivity type, at least a first portion of the concentric octagon-shaped pillars being disposed in the active region and at least a second portion of the concentric octagon-shaped pillars being disposed in the termination region,sidewalls of the plurality of trenches defining a first four legs and a second four legs of each of the plurality of concentric octagon-shaped pillars, the sidewalls having a same crystallographic plane direction, the first four legs including at least two legs of a first length and the second four legs including at least two legs of a second length, the second length being different than the first length.

View all claims
  • 7 Assignments
Timeline View
Assignment View
    ×
    ×