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Method for producing an optoelectronic component, and an optoelectronic component

  • US 9,431,580 B2
  • Filed: 09/26/2007
  • Issued: 08/30/2016
  • Est. Priority Date: 09/26/2006
  • Status: Active Grant
First Claim
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1. A method for producing an optoelectronic component, comprising:

  • providing a semiconductor layer sequence having at least one active region, wherein the at least one active region emits electromagnetic radiation during operation; and

    applying, with an ion assisted application method, at least one layer directly on a first surface of the semiconductor layer sequence such that the at least one layer has a peak-to-peak roughness of less than approximately 4 nm,applying, with an ion assisted application method, at least one layer directly on a second surface of the semiconductor layer sequence such that the at least one layer has a peak-to-peak roughness of less than approximately 4 nm, the second surface arranged on a side of the semiconductor layer sequence that is remote from the first surface,wherein material applied by the ion assisted application method is one of;

    ionized and accelerated in an electric field towards the semiconductor layer sequence, andaccelerated by at least one of an ionized gas and an ionized gas beam,wherein the second surface comprises a radiation exit area,wherein the applying the at least one layer on the first surface consists of applying a plurality of layer pairs, each of said layer pairs consisting of a first layer and a second layer,wherein the applying the at least one layer on the second surface consists of applying a plurality of layer pairs, each of said layer pairs consisting of a first layer and a second layer,wherein each first layer consists of tantalum pentoxide,wherein each second layer comprises silicon dioxide,wherein each of the first and second layers has a thickness of approximately a quarter of the wavelength of the electromagnetic radiation emitted by the active region of the semiconductor layer sequence, andwherein a number of layer pairs on the second surface is less than a number of layer pairs on the first surface.

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