Method for producing an optoelectronic component, and an optoelectronic component

• US 9,431,580 B2
• Filed: 09/26/2007
• Issued: 08/30/2016
• Est. Priority Date: 09/26/2006
• Status: Active Grant

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Hss, Christine, Hrle, Volker, Lell, Alfred, Strauss, Uwe
• Primary Examiner(s): Nguyen, Ha Tran T
• Assistant Examiner(s): KLEIN, JORDAN M
• Application Number:
  US11/904,203
• Publication Number:
  US 20080121923A1
• Time in Patent Office: 3,261 Days
• Field of Search: 257/81, 257/82, 257/91, 257/98, 257/99, 257/100, 257/116, 257432-437, 257/749, 257/E33.059, 438 25- 35
• US Class Current: 1/1
• CPC Class Codes: H01L 2933/0025 relating to coatings
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01S 2301/176 Specific passivation layers on surfaces other than the emission facet
• CPC Class Codes: H01S 5/0282 Passivation layers or treatments
• CPC Class Codes: H01S 5/0287 Facet reflectivity

Abstract

A method for producing an optoelectronic component comprising the steps of providing a semiconductor layer sequence having at least one active region, wherein the active region is suitable for emitting electromagnetic radiation during operation, and applying at least one layer on a first surface of the semiconductor layer sequence by means of an ion assisted application method.

Claims

1. A method for producing an optoelectronic component, comprising:

providing a semiconductor layer sequence having at least one active region, wherein the at least one active region emits electromagnetic radiation during operation; and

applying, with an ion assisted application method, at least one layer directly on a first surface of the semiconductor layer sequence such that the at least one layer has a peak-to-peak roughness of less than approximately 4 nm,

applying, with an ion assisted application method, at least one layer directly on a second surface of the semiconductor layer sequence such that the at least one layer has a peak-to-peak roughness of less than approximately 4 nm, the second surface arranged on a side of the semiconductor layer sequence that is remote from the first surface,

wherein material applied by the ion assisted application method is one of;

ionized and accelerated in an electric field towards the semiconductor layer sequence, and

accelerated by at least one of an ionized gas and an ionized gas beam,

wherein the second surface comprises a radiation exit area,

wherein the applying the at least one layer on the first surface consists of applying a plurality of layer pairs, each of said layer pairs consisting of a first layer and a second layer,

wherein the applying the at least one layer on the second surface consists of applying a plurality of layer pairs, each of said layer pairs consisting of a first layer and a second layer,

wherein each first layer consists of tantalum pentoxide,

wherein each second layer comprises silicon dioxide,

wherein each of the first and second layers has a thickness of approximately a quarter of the wavelength of the electromagnetic radiation emitted by the active region of the semiconductor layer sequence, and

wherein a number of layer pairs on the second surface is less than a number of layer pairs on the first surface.

2. The method of claim 1, wherein the first surface is a side surface of the semiconductor layer sequence.

3. The method of claim 2, wherein the at least one layer applied on the first surface is applied to each of the side surfaces.

4. The method of claim 1, wherein the first surface is adjacent to the at least one active region.

5. The method of claim 1, wherein the at least one layer applied on the first surface is different from the another at least one layer applied to the second surface.

6. The method of claim 1, wherein the applying the at least one layer to the first surface and the applying the another at least one layer to the second surface are carried out simultaneously.

7. The method of claim 1, wherein the ion assisted application method is one of ion plating and reactive ion plating.

8. The method of claim 1, wherein the at least one layer is applied on the first surface of the semiconductor layer sequence by the ion assisted application method such that the at least one layer has a refractive index of greater than or equal to 2.25.

9. The method of claim 1, wherein the number of layer pairs on the first surface is five or seven to ten, and wherein the number of layer pairs on the second surface is one or two.

10. The method of claim 9, wherein the number of layer pairs on the second surface is one.