Optoelectronic device containing at least one active device layer having a wurtzite crystal structure, and methods of making same

• US 9,431,794 B2
• Filed: 09/10/2014
• Issued: 08/30/2016
• Est. Priority Date: 04/06/2011
• Status: Expired due to Fees

• Current Assignee: VerLASE Technologies, LLC
• Original Assignee: VerLASE Technologies, LLC
• Inventors: Jain, Ajaykumar R.
• Primary Examiner(s): PERT, EVAN T
• Application Number:
  US14/482,203
• Publication Number:
  US 20140376583A1
• Time in Patent Office: 720 Days
• US Class Current: 1/1
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 21/0237 Materials
• CPC Class Codes: H01L 21/024 Group 12/16 materials
• CPC Class Codes: H01L 21/02417 Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
• CPC Class Codes: H01L 21/02521 Materials
• CPC Class Codes: H01L 21/02551 Group 12/16 materials
• CPC Class Codes: H01L 21/02557 Sulfides
• CPC Class Codes: H01L 21/02568 Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
• CPC Class Codes: H01L 31/02325 the optical elements not being integrated nor being directly associated with the device
• CPC Class Codes: H01L 31/0296 including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
• CPC Class Codes: H01L 31/032 including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
• CPC Class Codes: H01L 31/0324 comprising only AIVBVI or AIIBIVCVI chalcogenide compounds, e.g. Pb Sn Te
• CPC Class Codes: H01L 31/035236 Superlattices; Multiple quantum well structures
• CPC Class Codes: H01L 31/036 characterised by their crystalline structure or particular orientation of the crystalline planes
• CPC Class Codes: H01L 33/005 Processes
• CPC Class Codes: H01L 33/0083 for devices with an active region comprising only II-VI compounds
• CPC Class Codes: H01L 33/0087 with a substrate not being a II-VI compound
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/18 within the light emitting region
• CPC Class Codes: H01L 33/26 : Materials of the light emitting region
• CPC Class Codes: H01L 33/28 : containing only elements of Group II and Group VI of the Periodic Table
• CPC Class Codes: H01L 33/32 : containing nitrogen
• CPC Class Codes: H01L 33/46 : Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01S 5/0206 : Substrates, e.g. growth, shape, material, removal or bonding; specific crystal orientation H01S5/3202
• CPC Class Codes: H01S 5/0217 : Removal of the substrate
• CPC Class Codes: H01S 5/125 : Distributed Bragg reflector [DBR] lasers
• CPC Class Codes: H01S 5/183 : having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
• CPC Class Codes: H01S 5/187 : using Bragg reflection
• CPC Class Codes: H01S 5/327 : in AIIBVI compounds, e.g. ZnCdSe-laser
• CPC Class Codes: H01S 5/347 : in AIIBVI compounds, e.g. ZnCdSe- laser

Abstract

Optoelectronic devices, such as light-emitting diodes, laser diodes, image sensors, optical detectors, etc., made by depositing (growing) one or more epitaxial semiconductor layers on a monocrystalline lamellar/layered substrate so that each layer has a wurtzite crystal structure. In some embodiments, the layers are deposited and then one or more lamellas of the starting substrate are removed from the rest of the substrate. In one subset of such embodiments, the removed lamella(s) is/are partially or entirely removed. In other embodiments, one or more lamellas of the starting substrate are removed prior to depositing the one or more wurtzite-crystal-structure-containing layer(s).

Claims

1. A semiconductor structure, comprising:

an optoelectronic device that includes;

an active device region comprising a semiconductor coating having a wurtzite crystal structure, wherein said semiconductor coating is selected from a group consisting of a II-VI semiconductor material or a I-VI semiconductor material, said active device region having a first side and a second side opposite said first side;

a first ohmic contact located on said first side of said active device region and in operative relation to said active device region; and

a second ohmic contact located on said second side of said active device region and in operative relation to said active device region and said first ohmic contact;

wherein said wurtzite crystal structure results from epitaxial growth of said semiconductor coating on a naturally lamellar single crystal substrate selected to promote said wurtzite crystal structure.

2. A semiconductor structure according to claim 1, wherein said naturally lamellar single crystal substrate includes a substrate having a base material selected from the group consisting of GaTe, GaSe, WS₂, ZnIn₂S₄, SnS₂, Bi₂Se₃, Bi₂Te₃, GeSe, and PbI₂.

3. A semiconductor structure according to claim 1, wherein said wurtzite crystal structure coating from a group consisting of a II-VI semiconductor material includes a coating layer wherein the coating layer has a II-VI semiconductor base material selected from a group consisting of ZnS, ZnSSe, ZnSe, CdS, CdSSe, HgS, CdSe, ZnTe, HgSe, CdTe, and HgTe.

4. A semiconductor structure according to claim 1, wherein said wurtzite crystal structure coating from a group consisting of a I-VI semiconductor material includes a coating layer wherein the coating layer has a I-VI semiconductor base material selected from a group consisting of Copper Sulfide.

5. A semiconductor structure according to claim 1, wherein said optoelectronic device comprises a remnant of the lamellar substrate.

6. A semiconductor structure according to claim 1, further comprising a first and second distributed Bragg reflectors, wherein said active device region and said first and second ohmic contacts are sandwiched between said first and second distributed Bragg reflectors.

7. A semiconductor structure according to claim 1, further comprising a heteroepitaxial layer adjacent to said semiconductor coating.

8. A semiconductor structure according to claim 7, wherein said heteroepitaxial layer is an intrinsic layer of a p-i-n structure.

9. A semiconductor structure according to claim 7, wherein said heteroepitaxial layer is a quantum confining layer.

10. A semiconductor structure according to claim 1, further comprising a handle substrate secured to said optoelectronic device.

11. A semiconductor structure according to claim 1, wherein said optoelectronic device is an electromagnetic radiation emitter.

12. A semiconductor structure according to claim 11, wherein said optoelectronic device is a light emitter.

13. A semiconductor structure according to claim 1, wherein said optoelectronic device is an electromagnetic radiation detector.

14. A semiconductor structure according to claim 13, wherein said optoelectronic device is a light detector.

15. A structure, comprising:

a surface-emitting laser that includes;

a pair of spaced mirrors defining a resonator cavity; and

a light-emitting structure located within said resonator cavity, said light-emitting structure comprising a plurality of differently doped semiconductor layers composed of at least one II-VI semiconductor material, each of said differently doped semiconductor layers having a wurtzite crystal structure;

wherein said resonator cavity is configured, and said at least one II-VI semiconductor material is selected, so that said surface-emitting laser emits visible light.

16. A structure according to claim 15, wherein said resonator cavity is configured, and said at least one II-VI semiconductor material is selected, so that said surface-emitting laser emits substantially only green light.

17. A structure according to claim 15, wherein said surface-emitting laser further includes a remnant of a substrate on which said plurality of differently doped semiconductor layers are formed.

18. A structure according to claim 17, wherein said remnant is a remnant of a naturally lamellar single crystal substrate.

19. A structure according to claim 18, further comprising a permanent substrate.

20. A structure according to claim 19, wherein said permanent substrate is flexible.

21. A structure according to claim 15, wherein said plurality of differently doped semiconductor layers were grown on a primary substrate, said surface-emitting laser further comprising a secondary substrate.

22. A structure according to claim 21, wherein said secondary substrate is flexible relative to said primary substrate.

23. A structure according to claim 22, wherein said primary substrates has been substantially removed from said surface-emitting laser.

24. A structure according to claim 15, wherein said pair of spaced mirrors are formed integrally with said light-emitting structure.

25. A structure according to claim 24, wherein said pair of spaced mirrors are distributed Bragg reflectors.

26. A structure according to claim 15, wherein said plurality of differently doped semiconductor layers comprise multiple quantum-confining layers.