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Optoelectronic device containing at least one active device layer having a wurtzite crystal structure, and methods of making same

  • US 9,431,794 B2
  • Filed: 09/10/2014
  • Issued: 08/30/2016
  • Est. Priority Date: 04/06/2011
  • Status: Expired due to Fees
First Claim
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1. A semiconductor structure, comprising:

  • an optoelectronic device that includes;

    an active device region comprising a semiconductor coating having a wurtzite crystal structure, wherein said semiconductor coating is selected from a group consisting of a II-VI semiconductor material or a I-VI semiconductor material, said active device region having a first side and a second side opposite said first side;

    a first ohmic contact located on said first side of said active device region and in operative relation to said active device region; and

    a second ohmic contact located on said second side of said active device region and in operative relation to said active device region and said first ohmic contact;

    wherein said wurtzite crystal structure results from epitaxial growth of said semiconductor coating on a naturally lamellar single crystal substrate selected to promote said wurtzite crystal structure.

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