Phosphor, preparing method for phosphor, and light emitting device

• US 9,434,878 B2
• Filed: 10/23/2014
• Issued: 09/06/2016
• Est. Priority Date: 12/26/2013
• Status: Expired due to Fees

• Current Assignee: CHI MEI Corporation
• Original Assignee: CHI MEI Corporation
• Inventors: Chuang, Yao-Tsung, Uen, Jen-Shrong
• Primary Examiner(s): CHOI, CALVIN Y
• Application Number:
  US14/521,530
• Publication Number:
  US 20150184072A1
• Time in Patent Office: 684 Days
• Field of Search: None
• US Class Current: 1/1
• CPC Class Codes: C09K 11/7774 Aluminates
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/8592 Applying permanent coating, e.g. protective coating
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 33/502 Wavelength conversion materials

Abstract

A phosphor, a preparing method for the phosphor, and a light emitting device are provided. The phosphor has a formula of A_3−xCe_xQ₅O₁₂. A and Q are independently comprise Al, Ga, In, Sc, Y, La, Gd, Tb, Lu elements or combinations thereof. Ce represents a cerium element. O represents an oxygen element. 0<x≦3. The phosphor contains 100 ppm˜2000 ppm of Ba element.

Claims

1. A phosphor, comprising a formula of A₃₋

xCe_xQ₅O₁₂, wherein the A and the Q independently comprise aluminum (Al), gallium (Ga), indium (In), scandium (Sc), yttrium (Y), lanthanun (La), gadolinium (Gd), terbium (Tb), lutetium (Lu), or a combination thereof, Ce is cerium, O is oxygen, 0<

x≦

3, and the phosphor contains 100 ppm˜

2000 ppm of barium (Ba).

2. The phosphor according to claim 1, wherein the phosphor contains 200 ppm˜

800 ppm of silicon (Si).

3. The phosphor according to claim 1, wherein the phosphor contains 200 ppm˜

1800 ppm of Ba.

4. The phosphor according to claim 1, wherein the phosphor contains 300 ppm˜

700 ppm of Si.

5. The phosphor according to claim 1, wherein A comprises at least one of elements Y, Gd, Tb and Lu.

6. The phosphor according to claim 1, wherein Q comprises at least one of elements Al, Ga, In and Sc.

7. The phosphor according to claim 1, wherein 1≧

x≧

0.025.

8. The phosphor according to claim 1, wherein Q is Al_yGa₁₋

y, and 1≧

y≧

0.4.

9. A light emitting device, comprising:

a semiconductor light emitting element; and

the phosphor according to claim 1, wherein the phosphor is excited by a light emitted from the semiconductor light emitting element and converts the light emitted from the semiconductor light emitting element to emit a light having a wavelength different from a wavelength of light emitted from the semiconductor light emitting element.

10. A preparing method for a phosphor according to claim 1, comprising:

sintering a raw material mixture to obtain a sintered phosphor material, mixing the sintered phosphor material with an alkali metal silicate aqueous solution to obtain a phosphor mixture, and then a subsequent treating process performing to the phosphor mixture to obtain the phosphor, wherein the subsequent treating process comprises a water-washing step.

11. A phosphor, comprising a formula of A₃₋

xCe_xQ₅O₁₂, wherein the A and the Q independently comprise aluminum (Al), gallium (Ga), indium (In), scandium (Sc), yttrium (Y), lanthanun (La), gadolinium (Gd), terbium (Tb), lutetium (Lu), or a combination thereof, Ce is cerium, O is oxygen, 0<

x≦

3, and the phosphor contains 200 ppm˜

800 ppm of Si.

12. The phosphor according to claim 11, wherein the phosphor contains 300 ppm˜

700 ppm of Si.

13. The phosphor according to claim 11, wherein A comprises at least one of elements Y, Gd, Tb and Lu.

14. The phosphor according to claim 11, wherein Q comprises at least one of elements Al, Ga, In and Sc.

15. The phosphor according to claim 11, wherein 1≧

x≧

0.025.

16. The phosphor according to claim 11, wherein Q is Al_yGa₁₋

y, and 1≧

y≧

0.4.

17. A preparing method for a phosphor according to claim 11, comprising:

sintering a raw material mixture to obtain a sintered phosphor material, mixing the sintered phosphor material with an alkali metal silicate aqueous solution to obtain a phosphor mixture, and then a subsequent treating process performing to the phosphor mixture to obtain the phosphor, wherein the subsequent treating process comprises a water-washing step.