Wafer chucking system for advanced plasma ion energy processing systems

• US 9,435,029 B2
• Filed: 07/28/2011
• Issued: 09/06/2016
• Est. Priority Date: 08/29/2010
• Status: Active Grant

• Current Assignee: AES Global Holdings Pte Ltd. (Advanced Energy Industries, Inc. (China))
• Original Assignee: Advanced Energy Industries Incorporated
• Inventors: Brouk, Victor, Hoffman, Daniel J.
• Primary Examiner(s): BRAYTON, JOHN JOSEPH
• Application Number:
  US13/193,299
• Publication Number:
  US 20120052599A1
• Time in Patent Office: 1,867 Days
• Field of Search: 204/298.08, 438/5, 118/708, 257/E21.525
• US Class Current: 1/1
• CPC Class Codes: C23C 14/345 using substrate bias
• CPC Class Codes: C23C 16/50 using electric discharges generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34
• CPC Class Codes: H01J 37/32009 Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources plasma generation in general H05H1/24
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32174 Circuits specially adapted for controlling the RF discharge
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H01J 37/3299 Feedback systems

Abstract

Systems, methods and apparatus for regulating ion energies in a plasma chamber and chucking a substrate to a substrate support are disclosed. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a desired distribution of energies of ions at the surface of the substrate so as to effectuate the desired distribution of ion energies on a time-averaged basis.

Claims

1. A system for plasma-based processing, comprising:

a plasma processing chamber configured to contain a plasma;

an electrostatic chuck positioned within the plasma processing chamber and coupled to a substrate,

an ion-energy control portion, the ion-energy control portion including a controllable DC voltage source to provide a DC output voltage defined by a potential difference between a first voltage and a ground potential, wherein the potential difference has a magnitude that is determined by at least one ion-energy distribution setting, wherein the ion-energy distribution setting is indicative of a desired ion energy distribution of the ions at the surface of the substrate;

a first switching component disposed to switchably couple the first voltage of the DC voltage source to the electrostatic chuck;

a second switching component disposed to switchably couple the ground potential of the DC voltage source to the electrostatic chuck;

a first controller to alternately open and close the first and second switching components to alternately apply the first voltage and the ground potential of the DC voltage source to the electrostatic chuck;

a DC offset supply coupled to the electrostatic chuck;

a DC offset controller to control a DC offset voltage applied by the DC offset supply; and

an ion current compensation component coupled to the electrostatic chuck, the ion current compensation component, including a controllable DC current source coupled to the electrostatic chuck to provide an uninterrupted compensation current, which is fixed in magnitude to the substrate support, wherein DC power including the DC voltage source, the DC offset supply, and the DC current source is the sole source of power applied to the electrostatic chuck.

2. The system of claim 1, wherein the DC voltage source is floating.

3. The system of claim 1, wherein the first and second switching components respectively couple the first and second voltages to the electrostatic chuck via a first conductor, and the DC offset voltage is provided to the electrostatic chuck via a second conductor.

10. The system of claim 1 wherein the ion current compensation component is configured to enable a user to define a spread of a uniform distribution of ion energy.

4. An apparatus for plasma-based processing, comprising:

a controller configured to provide at least two separate gate drive-control signals, the at least two separate gate drive control signals are either high or low and are not simultaneously high;

a switch mode power supply adapted to provide a periodic voltage function, responsive to the at least two gate drive-control signals, to an electrostatic chuck of a plasma processing chamber, the switch mode power supply having at least two field effect transistor (FET) switching components configured to alternately couple a DC voltage and a ground potential to the electrostatic chuck in response to the gate drive control signals to generate a pulsed voltage, each of the FET switching components including a gate disposed to receive a corresponding one of the at least two gate drive control signals;

a DC offset supply disposed to apply a DC offset to the pulsed voltage; and

a DC current source coupled to the switch mode power supply, the DC current source is configured to provide constant uninterrupted current that is fixed in magnitude, and the output from the DC current source is combined with the pulsed voltage before reaching the electrostatic chuck and DC power including the DC voltage, the DC offset supply, and the DC current source is a sole source of power output from the apparatus, and where an amplitude of the constant uninterrupted current output from the DC current source controls a width of an ion energy distribution of a plasma in the plasma processing chamber.

5. The apparatus of claim 4, wherein the switch mode power supply is floating.

6. The apparatus of claim 4, wherein the pulsed voltage and the current output of the DC current source are combined in parallel within the switch mode power supply.

7. The apparatus of claim 4, wherein the DC offset supply is coupled in series with the switch mode power supply.

8. The apparatus of claim 4, wherein the pulsed voltage from the switch mode power supply and the current output of the DC current source are combined in parallel outside the switch mode power supply.

9. An apparatus for plasma-based processing, comprising:

a DC power supply that provides a positive DC voltage that is fixed at a magnitude responsive to an ion-energy setting, wherein the ion-energy setting is indicative of a desired ion energy at the surface of a substrate;

an output disposed to couple to a substrate support;

two switching components including a first switching component coupled to the positive DC power supply and a second switching component coupled to a ground terminal, the two switching components configured to alternately couple the positive DC voltage and the ground terminal to the output;

a DC offset supply disposed to apply a DC offset to the output; and

an ion current compensation component coupled to the output, the ion current compensation component including;

a controllable DC current source, separate from the DC power supply, that is consistently coupled to the output; and

a current controller configured to monitor a rate of change of a voltage of the output and maintain an uninterrupted DC current, which is fixed in magnitude, to the output based upon the rate of change of the voltage.