Temperature sensor circuit and semiconductor device including temperature sensor circuit
First Claim
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1. A temperature sensor circuit comprising:
- a first constant current circuit;
a first semiconductor element where a first voltage is generated between a pair of terminals in accordance with a first current supplied from the first constant current circuit;
a second constant current circuit;
a second semiconductor element where a second voltage is generated between a pair of terminals in accordance with a second current supplied from the second constant current circuit; and
an amplifier circuit which amplifies a difference between the first voltage and the second voltage,wherein a rate of change in the first voltage with a first temperature of the first semiconductor element is greater than a rate of change in the second voltage with a second temperature of the second semiconductor element,wherein a value of the first temperature is the same as a value of the second temperature,wherein the second semiconductor element comprises an oxide semiconductor, andwherein the first semiconductor element comprises a semiconductor other than the oxide semiconductor.
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Abstract
To provide a highly accurate temperature sensor circuit. The temperature sensor circuit includes a first constant current circuit; a first diode in which a first voltage reflecting the temperature of an object to be detected is generated between an anode and a cathode in accordance with a first current supplied from the first constant current circuit; a second constant current circuit; a second diode which includes an oxide semiconductor and in which a second voltage is generated between an anode and a cathode in accordance with a second current supplied from the second constant current circuit; and an amplifier circuit which amplifies a difference between the first voltage and the second voltage.
122 Citations
10 Claims
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1. A temperature sensor circuit comprising:
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a first constant current circuit; a first semiconductor element where a first voltage is generated between a pair of terminals in accordance with a first current supplied from the first constant current circuit; a second constant current circuit; a second semiconductor element where a second voltage is generated between a pair of terminals in accordance with a second current supplied from the second constant current circuit; and an amplifier circuit which amplifies a difference between the first voltage and the second voltage, wherein a rate of change in the first voltage with a first temperature of the first semiconductor element is greater than a rate of change in the second voltage with a second temperature of the second semiconductor element, wherein a value of the first temperature is the same as a value of the second temperature, wherein the second semiconductor element comprises an oxide semiconductor, and wherein the first semiconductor element comprises a semiconductor other than the oxide semiconductor. - View Dependent Claims (2, 3, 4)
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5. A semiconductor device comprising:
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a temperature sensor circuit which generates a signal; an output device; and a signal processing circuit which controls operation of the output device using the signal, wherein the temperature sensor circuit comprises; a first constant current circuit; a first semiconductor element where a first voltage is generated between a pair of terminals in accordance with a first current supplied from the first constant current circuit; a second constant current circuit; a second semiconductor element where a second voltage is generated between a pair of terminals in accordance with a second current supplied from the second constant current circuit; and an amplifier circuit which amplifies a difference between the first voltage and the second voltage and generates the signal, and wherein a rate of change in the first voltage with a first temperature of the first semiconductor element is greater than a rate of change in the second voltage with a second temperature of the second semiconductor element, wherein a value of the first temperature is the same as a value of the second temperature, wherein the second semiconductor element comprises an oxide semiconductor, and wherein the first semiconductor element comprises a semiconductor other than the oxide semiconductor. - View Dependent Claims (6, 7, 8, 9, 10)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsKoyama, Jun, Yamazaki, Shunpei
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Primary Examiner(s)Caputo, Lisa
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Assistant Examiner(s)Cotey, Philip
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Application NumberUS13/873,550Publication NumberTime in Patent Office1,225 DaysField of Search374/163US Class Current1/1CPC Class CodesG01K 7/01 using semiconducting elemen...
