Stack with wide seed layer

• US 9,437,224 B2
• Filed: 08/19/2014
• Issued: 09/06/2016
• Est. Priority Date: 04/30/2012
• Status: Active Grant

• Current Assignee: Seagate Technology LLC (Seagate Technology Holdings Plc)
• Original Assignee: Seagate Technology LLC (Seagate Technology Holdings Plc)
• Inventors: Singleton, Eric Walter, Yi, Jae-Young, Nikolaev, Konstantin, Sapozhnikov, Victor Boris, Wakeham, Stacey Christine, McKinlay, Shaun Eric
• Primary Examiner(s): BERNATZ, KEVIN M
• Application Number:
  US14/463,331
• Publication Number:
  US 20140356648A1
• Time in Patent Office: 749 Days
• Field of Search: None
• US Class Current: 1/1
• CPC Class Codes: G01R 33/093 using multilayer structures, e.g. giant magnetoresistance sensors thin magnetic films H01F10/00
• CPC Class Codes: G11B 5/3906 Details related to the use of magnetic thin film layers or to their effects
• CPC Class Codes: G11B 5/3909 Arrangements using a magnetic tunnel junction
• CPC Class Codes: G11B 5/3912 Arrangements in which the active read-out elements are transducing in association with active magnetic shields, e.g. magnetically coupled shields G11B5/3916 takes precedence
• CPC Class Codes: G11B 5/3932 Magnetic biasing films
• CPC Class Codes: G11B 5/398 Specially shaped layers
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: Y10T 428/1114 having tunnel junction effect
• CPC Class Codes: Y10T 428/1121 Multilayer
• CPC Class Codes: Y10T 428/1143 with defined structural feature

Abstract

A stack having a seed layer structure with a first part having a first cross-track width and a free layer deposited over the seed layer structure and with a second cross-track width, wherein the first cross-track width is greater than the second cross-track width. In one implementation, the seed layer structure further comprises an antiferromagnetic (AFM) layer and a synthetic antiferromagnetic (SAF) layer. In one alternate implementation, the cross-track width of the seed layer structure is substantially equal to the combined cross-track width of the free layer and cross-track width of two permanent magnets.

Claims

1. A magnetoresistive sensor comprising:

a seed layer structure comprising an antiferromagnetic (AFM) layer and a synthetic antiferromagnetic (SAF) layer;

a free layer deposited over the seed layer structure and with a second cross-track width; and

wherein the AFM layer has a tapering thickness away from a center of the magnetoresistive sensor.

2. The magnetoresistive sensor of claim 1 wherein height of the AFM layer is graded in the cross-track direction.

3. The magnetoresistive sensor of claim 2, further comprising a shield layer and wherein the height of the AFM layer is graded in the cross-track direction such that at least part of a shield layer has a cross-track width that is substantially similar to the cross-track width of the free layer.

4. The magnetoresistive sensor of claim 2 wherein the height of the AFM layer is graded in the cross-track direction such that the height of the AFM layer increases away from the free layer.

5. The magnetoresistive sensor of claim 1 wherein the free layer is configured between at least one of (1) permanent magnets (PMs) and (2) side shields in the cross-track direction.

6. The magnetoresistive sensor of claim 5 wherein the PMs and the AFM layer overlap in the cross-track direction.

7. The magnetoresistive sensor of claim 5 wherein at least part of a shield layer is located between two sections of the AFM layer in the cross-track direction.

8. A magnetoresistive sensor comprising:

a free layer between a first permanent magnet and a second permanent magnet;

an antiferromagnetic (AFM) layer, wherein the AFM layer has a trapezoidal shape with a wider side close to the free layer and wherein the AFM layer has a tapering thickness away from a center of the magnetoresistive sensor.

9. The magnetoresistive sensor of claim 8 wherein the AFM layer is located between a seed layer and a synthetic antiferromagnetic (SAF) layer.

10. The magnetoresistive sensor of claim 9 further comprising a shield layer below the AFM layer wherein the shield layer is substantially in contact with the SAF layer at each of two edges of the magnetoresistive sensor.

11. The magnetoresistive sensor of claim 9 wherein the AFM layer structure further comprising a tunneling barrier layer located between the free layer and the AFM layer structure.

12. The magnetoresistive sensor of claim 9 wherein at least part of the SAF layer being adjacent to a shield layer.

13. The magnetoresistive sensor of claim 9 wherein the height of the AFM layer is graded in the cross-track direction such that the height of the AFM layer increases away from the free layer.

14. A magnetoresistive sensor comprising:

a free layer;

a synthetic antiferromagnetic (SAF) layer; and

an antiferromagnetic (AFM) layer, wherein the AFM layer has a trapezoidal shape with a wider side close to the free layer and is located on a shield layer and wherein the shield layer is substantially in contact with the SAF layer at each of two edges of the magnetoresistive sensor.

15. The magnetoresistive sensor of claim 14 wherein cross-track width of at least a part of the AFM layer structure is greater than cross-track width of the free layer.

16. The magnetoresistive sensor of claim 14 wherein the AFM structure has graded height along the cross-track direction.

17. The magnetoresistive sensor of claim 14, wherein the AFM structure does not overlap the free layer along the cross-track direction.

18. The magnetoresistive sensor of claim 14 wherein at least part of the shield layer has a cross-track width that is substantially similar to the cross-track width of the free layer.