Stack with wide seed layer
First Claim
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1. A magnetoresistive sensor comprising:
- a seed layer structure comprising an antiferromagnetic (AFM) layer and a synthetic antiferromagnetic (SAF) layer;
a free layer deposited over the seed layer structure and with a second cross-track width; and
wherein the AFM layer has a tapering thickness away from a center of the magnetoresistive sensor.
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Abstract
A stack having a seed layer structure with a first part having a first cross-track width and a free layer deposited over the seed layer structure and with a second cross-track width, wherein the first cross-track width is greater than the second cross-track width. In one implementation, the seed layer structure further comprises an antiferromagnetic (AFM) layer and a synthetic antiferromagnetic (SAF) layer. In one alternate implementation, the cross-track width of the seed layer structure is substantially equal to the combined cross-track width of the free layer and cross-track width of two permanent magnets.
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Citations
18 Claims
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1. A magnetoresistive sensor comprising:
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a seed layer structure comprising an antiferromagnetic (AFM) layer and a synthetic antiferromagnetic (SAF) layer; a free layer deposited over the seed layer structure and with a second cross-track width; and wherein the AFM layer has a tapering thickness away from a center of the magnetoresistive sensor. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A magnetoresistive sensor comprising:
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a free layer between a first permanent magnet and a second permanent magnet; an antiferromagnetic (AFM) layer, wherein the AFM layer has a trapezoidal shape with a wider side close to the free layer and wherein the AFM layer has a tapering thickness away from a center of the magnetoresistive sensor. - View Dependent Claims (9, 10, 11, 12, 13)
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14. A magnetoresistive sensor comprising:
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a free layer; a synthetic antiferromagnetic (SAF) layer; and an antiferromagnetic (AFM) layer, wherein the AFM layer has a trapezoidal shape with a wider side close to the free layer and is located on a shield layer and wherein the shield layer is substantially in contact with the SAF layer at each of two edges of the magnetoresistive sensor. - View Dependent Claims (15, 16, 17, 18)
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Specification