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Self-storing and self-restoring non-volatile static random access memory

  • US 9,437,298 B1
  • Filed: 03/25/2015
  • Issued: 09/06/2016
  • Est. Priority Date: 03/25/2015
  • Status: Active Grant
First Claim
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1. An apparatus comprising:

  • a Static Random Access Memory (SRAM) cell with at least two non-volatile (NV) resistive memory elements integrated within the SRAM cell; and

    first logic to self-store data stored in the SRAM cell to the at least two NV resistive memory elements, wherein the first logic is to self-store the data by discharging voltages on both a bit-line and a complementary bit-line to ground.

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