Self-storing and self-restoring non-volatile static random access memory

• US 9,437,298 B1
• Filed: 03/25/2015
• Issued: 09/06/2016
• Est. Priority Date: 03/25/2015
• Status: Active Grant

• Current Assignee: Tahoe Research Limited (f/k/a Learndale Limited) (Vector Capital Corporation)
• Original Assignee: Intel Corporation
• Inventors: Karpov, Elijah V. Ilya, Tomishima, Shigeki, Nikonov, Dmitri E., Young, Ian A., Chau, Robert S.
• Primary Examiner(s): Luu, Pho M
• Application Number:
  US14/668,896
• Publication Number:
  US 20160284406A1
• Time in Patent Office: 531 Days
• Field of Search: 365/154, 365/155, 365/156
• US Class Current: 1/1
• CPC Class Codes: G11C 11/4116 with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
• CPC Class Codes: G11C 11/412 using field-effect transistors only
• CPC Class Codes: G11C 11/413 Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
• CPC Class Codes: G11C 11/416 Read-write [R-W] circuits
• CPC Class Codes: G11C 11/419 Read-write [R-W] circuits
• CPC Class Codes: G11C 13/0097 Erasing, e.g. resetting, circuits or methods
• CPC Class Codes: G11C 14/009 and the nonvolatile element is a resistive RAM element, i.e. programmable resistors, e.g. formed of phase change or chalcogenide material

Abstract

An apparatus is provided which comprises: a Static Random Access Memory (SRAM) cell with at least two non-volatile (NV) resistive memory elements integrated within the SRAM cell; and first logic to self-store data stored in the SRAM cell to the at least two NV resistive memory elements. A method is provided which comprises performing a self-storing operation, when a voltage applied to a SRAM cell decreases to a threshold voltage, to store voltage states of the SRAM cell to at least two NV resistive memory elements, wherein the at least two NV resistive memory elements are integrated with the SRAM cell; and performing self-restoring operation, when the voltage applied to the SRAM cell increases to the threshold voltage, by copying data from the at least two NV resistive memory elements to storage nodes of the SRAM cell.

Claims

1. An apparatus comprising:

a Static Random Access Memory (SRAM) cell with at least two non-volatile (NV) resistive memory elements integrated within the SRAM cell; and

first logic to self-store data stored in the SRAM cell to the at least two NV resistive memory elements, wherein the first logic is to self-store the data by discharging voltages on both a bit-line and a complementary bit-line to ground.

2. The apparatus of claim 1, wherein the first logic is operable to self-store the data when the voltage applied to the SRAM cell decreases to a threshold voltage or gets close to the threshold voltage.

3. The apparatus of claim 1 comprises second logic to self-restore data from the at least two NV resistive memory elements back to the SRAM cell.

4. The apparatus of claim 1, wherein the second logic is operable to self-restore data from the at least two NV resistive memory elements when the voltage applied to the SRAM cell increases to a threshold voltage.

5. The apparatus of claim 1, wherein the second logic is operable to self-restore data from the at least two NV resistive memory elements when the voltage applied to the SRAM cell is close to a power supply level.

6. The apparatus of claim 1, wherein the second logic is operable to apply ground voltages to the bit-line, complementary bit-line, and a word-line during power-up.

7. The apparatus of claim 1 comprises third logic which is operable to reset the at least two NV resistive memory elements.

8. The apparatus of claim 7, wherein the third logic is operable to reset the at least two NV resistive memory elements by setting bit-line and complementary bit-line to logic high.

9. The apparatus of claim 1, wherein the at least two NV resistive elements are coupled in series.

10. The apparatus of claim 9, comprises a source transistor coupled to a common node of the at least two NV resistive elements.

11. The apparatus of claim 10 comprises logic to bypass the at least two NV resistive elements during normal memory operation.

12. The apparatus of claim 11, wherein the logic causes current to flow from bit-line and complementary bit-line through the at least two NV resistive elements and the source transistor.

13. The apparatus of claim 9 comprises:

a first transistor coupled to one of the at least two NV resistive elements and a first access device; and

a second transistor coupled to another of the at least two NV resistive elements and a second access device.

14. The apparatus of claim 13 comprises:

a third transistor coupled to a common node of the first transistor and the one of the at least two NV resistive elements; and

a fourth transistor coupled to a common node of the second transistor and the other of the at least two NV resistive elements.

15. The apparatus of claim 14, wherein the second and fourth transistors are controllable by a second control signal.

16. The apparatus of claim 13, wherein the first and third transistors are controllable by a first control signal.

17. The apparatus of claim 1, wherein the NV resistive memory elements are integrated with the SRAM cell such that states of the NV resistive memory elements are preserved during normal operations of the SRAM cell.

18. A system comprising:

a processor;

a memory coupled to the processor, the memory including;

a Static Random Access Memory (SRAM) cell with at least two non-volatile (NV) resistive memory elements integrated within the SRAM cell; and

first logic to self-store data stored in the SRAM cell to the at least two NV resistive memory elements, wherein the first logic is to self-store the data by discharging voltages on both a bit-line and a complementary bit-line to ground; and

a wireless interface for allowing the processor to communicate with another device.

19. The system of claim 18, wherein the first logic is operable to self-store the data when a memory having the SRAM cell is being powered down, and wherein the memory comprises second logic to self-restore data from the at least two NV resistive memory elements back to the SRAM cell.

20. A method comprising:

performing a self-storing operation, when a voltage applied to a Static Random Access Memory (SRAM) cell decreases to a threshold voltage, to store voltage states of the SRAM cell to at least two non-volatile (NV) resistive memory elements, wherein the at least two NV resistive memory elements are integrated with the SRAM cell; and

performing self-restoring operation, when the voltage applied to the SRAM cell increases to the threshold voltage, by copying data from the at least two NV resistive memory elements to storage nodes of the SRAM cell, wherein performing the self-storing operation comprises setting bit-line and complementary bit-line associated with the SRAM cell to ground.

21. The method of claim 20 comprises performing reset operation on the at least two NV resistive memory elements.

22. The method of claim 21, wherein performing the reset operation comprises setting bit-line and complementary bit-line to logic high.

23. The method of claim 20, wherein the NV resistive memory elements are integrated with the SRAM cell such that states of the NV resistive memory elements are preserved during normal operations of the SRAM cell.