Adaptive program pulse duration based on temperature
First Claim
1. A method for operating a memory device, comprising:
- obtaining data indicating a temperature of the memory device;
determining a program pulse duration which is at least as long as a minimum allowable program pulse duration, the minimum allowable program pulse duration is relatively long when the temperature is relatively high and compensates for a temperature-based change in a time constant of a selected word line in the memory device;
programming a set of memory cells connected to the selected word line using program pulses having the program pulse duration, wherein the set of memory cells comprises memory cells which are to be programmed to a highest target data state of a plurality of target data states by the programming; and
adjusting a bit ignore number for the highest target data state based on the temperature, wherein the bit ignore number is relatively high when the temperature is relatively high, and the bit ignore number is a number of the memory cells which are to be programmed to the highest target data state which are permitted to fail a verify test of the highest target data state while still allowing the programming to be successfully completed.
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Abstract
Techniques are provided for reducing program disturb in a memory device. The techniques include compensating for a temperature in the memory device to reduce the upshift in the threshold voltage (Vth) of erased-state memory cells. A minimum allowable program pulse duration increases with temperature to account for an increase in the attenuation of a program pulse along a word line. A program pulse duration which accounts for reduced channel boosting at relatively high temperatures is reduced as the temperature increases. An optimum program pulse duration is based on the larger of these durations. The optimum program pulse duration can also be based on factors such as a measure of program disturb or a memory hole width. Program disturb can also be reduced by easing the requirements of a verify test for the highest data state.
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Citations
17 Claims
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1. A method for operating a memory device, comprising:
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obtaining data indicating a temperature of the memory device; determining a program pulse duration which is at least as long as a minimum allowable program pulse duration, the minimum allowable program pulse duration is relatively long when the temperature is relatively high and compensates for a temperature-based change in a time constant of a selected word line in the memory device; programming a set of memory cells connected to the selected word line using program pulses having the program pulse duration, wherein the set of memory cells comprises memory cells which are to be programmed to a highest target data state of a plurality of target data states by the programming; and
adjusting a bit ignore number for the highest target data state based on the temperature, wherein the bit ignore number is relatively high when the temperature is relatively high, and the bit ignore number is a number of the memory cells which are to be programmed to the highest target data state which are permitted to fail a verify test of the highest target data state while still allowing the programming to be successfully completed. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A memory device, comprising:
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a set of memory cells connected to a selected word line; a driver at one end of the selected word line; and a control circuit, the control circuit is configured to; obtain data indicating a temperature of the memory device; set a program pulse duration based on the temperature, wherein for temperatures below a breakpoint temperature, the program pulse duration increases with a decrease in the temperature and for temperatures above the breakpoint temperature, the program pulse duration increases with an increase in the temperature; and program a set of memory cells connected to the selected word line using program pulses having the program pulse duration. - View Dependent Claims (14, 15, 16)
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17. A method for operating a memory device, comprising:
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obtaining data indicating a temperature of the memory device; determining a program pulse duration which is at least as long as a minimum allowable program pulse duration, the minimum allowable program pulse duration is relatively long when the temperature is relatively high and compensates for a temperature-based change in a time constant of a selected word line in the memory device; and programming a set of memory cells connected to the selected word line using program pulses having the program pulse duration, wherein; the selected word line is in a set of word lines; each word line of the set of word lines is at a different height in the memory device and is adjacent to a portion of a vertical memory hole; a width of the vertical memory hole varies along a height of the memory hole; and the program pulse duration is based on a height of the selected word line in the memory device and is relatively short when a portion of the memory hole to which the selected word line is adjacent is relatively narrow.
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Specification