Method of manufacturing a semiconductor device having an oxide semiconductor layer with increased hydrogen concentration

• US 9,437,428 B2
• Filed: 11/24/2014
• Issued: 09/06/2016
• Est. Priority Date: 11/29/2013
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Oota, Masashi, Ishihara, Noritaka, Nakashima, Motoki, Kurosawa, Yoichi, Yamazaki, Shunpei, Hosaka, Yasuharu, Obonai, Toshimitsu, Koezuka, Junichi
• Primary Examiner(s): Garber, Charles
• Assistant Examiner(s): PATERSON, BRIGITTE A
• Application Number:
  US14/552,064
• Publication Number:
  US 20150155169A1
• Time in Patent Office: 652 Days
• Field of Search: None
• US Class Current: 1/1
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02422 Non-crystalline insulating materials, e.g. glass, polymers
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 21/425 producing ion implantation
• CPC Class Codes: H01L 21/477 Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering H01L21/38 - H01L21/449 and H01L21/461 - H01L21/475 take precedence
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/127 with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
• CPC Class Codes: H01L 28/20 Resistors
• CPC Class Codes: H01L 28/60 Electrodes
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous

Abstract

To provide a method for manufacturing a semiconductor device including an oxide semiconductor film having conductivity, or a method for manufacturing a semiconductor device including an oxide semiconductor film having a light-transmitting property and conductivity. The method for manufacturing a semiconductor device includes the steps of forming an oxide semiconductor film over a first insulating film, performing first heat treatment in an atmosphere where oxygen contained in the oxide semiconductor film is released, and performing second heat treatment in a hydrogen-containing atmosphere, so that an oxide semiconductor film having conductivity is formed.

Claims

1. A method for manufacturing a semiconductor device, comprising the steps of:

forming an oxide semiconductor film over a first insulating film;

performing a first heat treatment in a vacuum atmosphere where oxygen in the oxide semiconductor film is released;

performing a second heat treatment in a hydrogen-containing atmosphere to form an oxide semiconductor film having conductivity after the first heat treatment, and wherein a hydrogen concentration in the oxide semiconductor film having conductivity is increased to higher than or equal to 5×

10²⁰ atoms/cm³.

2. The method for manufacturing a semiconductor device according to claim 1,

wherein the first heat treatment is performed at a temperature higher than or equal to 350°

C. and lower than or equal to 800°

C., and

wherein the first heat treatment is performed in the vacuum atmosphere with a pressure greater than or equal to 1×

10<sup>−

7</sup> Pa and less than or equal to 10 Pa.

3. The method for manufacturing a semiconductor device according to claim 1,

wherein a resistivity of the oxide semiconductor film having conductivity is greater than or equal to 1×

10<sup>−

3</sup> Ω

cm and less than 1×

10⁴ Ω

cm.

4. The method for manufacturing a semiconductor device according to claim 1,

wherein the oxide semiconductor film having conductivity includes a crystal part, and an angle formed between a c-axis of the crystal part and a normal vector of a surface over which the oxide semiconductor film is formed is greater than or equal to −

30° and

less than or equal to 30°

.

5. The method for manufacturing a semiconductor device according to claim 1,

wherein the oxide semiconductor film having conductivity includes at least one of an In-Ga oxide, an In-Zn oxide, and an In-M-Zn oxide (M is Al, Ga, Y, Zr, Sn, La, Ce, or Nd).

6. The method for manufacturing a semiconductor device according to claim 1,

wherein the semiconductor device includes a resistor, and

wherein the resistor includes the oxide semiconductor film having conductivity.

7. The method for manufacturing a semiconductor device according to claim 1,

wherein the semiconductor device includes a capacitor, and

wherein the capacitor includes the oxide semiconductor film having conductivity.

8. A method for manufacturing a semiconductor device, comprising the steps of:

forming an oxide semiconductor film over a first insulating film;

adding a rare gas to the oxide semiconductor film by a doping method or an ion implantation method;

performing a heat treatment in a hydrogen-containing atmosphere to form an oxide semiconductor film having conductivity, and wherein a hydrogen concentration in the oxide semiconductor film having conductivity is increased to higher than or equal to 5×

10²⁰ atoms/cm³.

9. The method for manufacturing a semiconductor device according to claim 8,

wherein the rare gas is at least one of helium, neon, argon, krypton, and xenon.

10. The method for manufacturing a semiconductor device according to claim 8,

wherein a resistivity of the oxide semiconductor film having conductivity is greater than or equal to 1×

10<sup>−

3</sup> Ω

cm and less than 1×

10⁴ Ω

cm.

11. The method for manufacturing a semiconductor device according to claim 8,

wherein the oxide semiconductor film having conductivity includes a crystal part, and an angle formed between a c-axis of the crystal part and a normal vector of a surface over which the oxide semiconductor film is formed is greater than or equal to −

30° and

less than or equal to 30°

.

12. The method for manufacturing a semiconductor device according to claim 8,

wherein the oxide semiconductor film having conductivity includes at least one of an In-Ga oxide, an In-Zn oxide, and an In-M-Zn oxide (M is Al, Ga, Y, Zr, Sn, La, Ce, or Nd).

13. The method for manufacturing a semiconductor device according to claim 8,

wherein the semiconductor device includes a resistor, and

wherein the resistor includes the oxide semiconductor film having conductivity.

14. The method for manufacturing a semiconductor device according to claim 8,

wherein the semiconductor device includes a capacitor, and

wherein the capacitor includes the oxide semiconductor film having conductivity.