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Solid-state imaging element, manufacturing method, and electronic device

  • US 9,437,636 B2
  • Filed: 11/21/2014
  • Issued: 09/06/2016
  • Est. Priority Date: 11/29/2013
  • Status: Active Grant
First Claim
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1. A solid-state imaging element comprising:

  • a semiconductor substrate where a plurality of photodiodes are arranged in a plane; and

    a separation section which separates the photodiodes,wherein the separation section has a photoelectric conversion section formed by filling a material which has a high light absorption coefficient and a high quantum efficiency in trenches which are formed in the semiconductor substrate.

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