×

High-density power MOSFET with planarized metalization

  • US 9,437,729 B2
  • Filed: 01/08/2007
  • Issued: 09/06/2016
  • Est. Priority Date: 01/08/2007
  • Status: Active Grant
First Claim
Patent Images

1. A method for producing a power MOSFET, comprising:

  • fabricating a plurality of layers of a power MOSFET and an integrated Schottky device to produce an upper surface active area;

    performing a chemical mechanical polishing process on the upper surface active area to produce a substantially planar surface, wherein a gate contact is coplanar with an oxide deposit, wherein the oxide deposit comprises a source region, and wherein the oxide deposit comprises a drain region;

    performing a metalization deposition process on the substantially planar surface, wherein a portion of the metallization deposition is in contact with the gate contact; and

    completing fabrication of the power MOSFET and Schottky device.

View all claims
  • 6 Assignments
Timeline View
Assignment View
    ×
    ×