Semiconductor device
First Claim
1. A semiconductor device comprising:
- a first insulating film over a substrate;
a first oxide insulating film over the first insulating film;
an oxide semiconductor film including a channel formation region over and in contact with the first oxide insulating film;
a second oxide insulating film over and in contact with the oxide semiconductor film; and
a second insulating film over the second oxide insulating film,wherein the first insulating film and the second insulating film are in physical contact with each other, andwherein the oxide semiconductor film, the second oxide insulating film, and a part of the first oxide insulating film are provided on an inner side of the first insulating film and the second insulating film.
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Accused Products
Abstract
A semiconductor device including a transistor having excellent electrical characteristics is provided. Alternatively, a semiconductor device having a high aperture ratio and including a capacitor capable of increasing capacitance is provided. The semiconductor device includes a gate electrode, an oxide semiconductor film overlapping the gate electrode, an oxide insulating film in contact with the oxide semiconductor film, a first oxygen barrier film between the gate electrode and the oxide semiconductor film, and a second oxygen barrier film in contact with the first oxygen barrier film. The oxide semiconductor film and the oxide insulating film are provided on an inner side of the first oxygen barrier film and the second oxygen barrier film.
148 Citations
20 Claims
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1. A semiconductor device comprising:
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a first insulating film over a substrate; a first oxide insulating film over the first insulating film; an oxide semiconductor film including a channel formation region over and in contact with the first oxide insulating film; a second oxide insulating film over and in contact with the oxide semiconductor film; and a second insulating film over the second oxide insulating film, wherein the first insulating film and the second insulating film are in physical contact with each other, and wherein the oxide semiconductor film, the second oxide insulating film, and a part of the first oxide insulating film are provided on an inner side of the first insulating film and the second insulating film. - View Dependent Claims (2, 3, 4, 5)
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6. A semiconductor device comprising:
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a transistor comprising; a first insulating film over a substrate; a first oxide insulating film over the first insulating film; an oxide semiconductor film over and in contact with the first oxide insulating film; source and drain electrodes in contact with the oxide semiconductor film; a second oxide insulating film over and in contact with the oxide semiconductor film; and a second insulating film over the second oxide insulating film; a pixel electrode over the second insulating film; and a capacitor comprising; a film having conductivity over the first oxide insulating film; the second insulating film over and in contact with the film having conductivity; and the pixel electrode, wherein the first insulating film and the second insulating film are in physical contact with each other, and wherein the pixel electrode is in contact with one of the source and drain electrodes in an opening in the second insulating film. - View Dependent Claims (7, 8, 9, 10, 11, 12)
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13. A semiconductor device comprising:
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a transistor comprising; a first gate electrode over a substrate; a first insulating film over the first gate electrode; a first oxide insulating film over the first insulating film; an oxide semiconductor film over and in contact with the first oxide insulating film; source and drain electrodes in contact with the oxide semiconductor film; a second oxide insulating film over and in contact with the oxide semiconductor film; a second insulating film over the second oxide insulating film; and a second gate electrode over the second insulating film; a pixel electrode over the second insulating film; and a capacitor comprising; a film having conductivity over the first oxide insulating film; the second insulating film over and in contact with the film having conductivity; and the pixel electrode, wherein the first insulating film and the second insulating film are in physical contact with each other, wherein the first gate electrode and the second gate electrode overlap each other with the oxide semiconductor film provided therebetween, and wherein the pixel electrode is in contact with one of the source and drain electrodes in a first opening in the second insulating film. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification