Semiconductor device

• US 9,437,741 B2
• Filed: 05/08/2014
• Issued: 09/06/2016
• Est. Priority Date: 05/16/2013
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Miyake, Hiroyuki, Okazaki, Kenichi, Hayakawa, Masahiko, Matsuda, Shinpei
• Primary Examiner(s): Toledo, Fernando L
• Assistant Examiner(s): Bowen, Adam S
• Application Number:
  US14/272,759
• Publication Number:
  US 20140339539A1
• Time in Patent Office: 852 Days
• Field of Search: 257/43
• US Class Current: 1/1
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/78606 with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A semiconductor device including a transistor having excellent electrical characteristics is provided. Alternatively, a semiconductor device having a high aperture ratio and including a capacitor capable of increasing capacitance is provided. The semiconductor device includes a gate electrode, an oxide semiconductor film overlapping the gate electrode, an oxide insulating film in contact with the oxide semiconductor film, a first oxygen barrier film between the gate electrode and the oxide semiconductor film, and a second oxygen barrier film in contact with the first oxygen barrier film. The oxide semiconductor film and the oxide insulating film are provided on an inner side of the first oxygen barrier film and the second oxygen barrier film.

Claims

1. A semiconductor device comprising:

a first insulating film over a substrate;

a first oxide insulating film over the first insulating film;

an oxide semiconductor film including a channel formation region over and in contact with the first oxide insulating film;

a second oxide insulating film over and in contact with the oxide semiconductor film; and

a second insulating film over the second oxide insulating film,

wherein the first insulating film and the second insulating film are in physical contact with each other, and

wherein the oxide semiconductor film, the second oxide insulating film, and a part of the first oxide insulating film are provided on an inner side of the first insulating film and the second insulating film.

2. The semiconductor device according to claim 1, further comprising:

a first gate electrode between the substrate and the first insulating film; and

a second gate electrode over the second insulating film,

wherein the first gate electrode and the second gate electrode are in contact with each other in an opening in the first insulating film and the second insulating film.

3. The semiconductor device according to claim 2, wherein a side surface of the oxide semiconductor film faces the second gate electrode with the second oxide insulating film and the second insulating film provided therebetween.

4. The semiconductor device according to claim 1, wherein each of the first insulating film and the second insulating film is one selected from a silicon nitride film, a silicon nitride oxide film, an aluminum nitride film, an aluminum nitride oxide film, an aluminum oxide film, an aluminum oxynitride film, a gallium oxide film, a gallium oxynitride film, an yttrium oxide film, an yttrium oxynitride film, a hafnium oxide film, and a hafnium oxynitride film.

5. The semiconductor device according to claim 1,

wherein the second oxide insulating film includes an oxide film containing more oxygen than that in a stoichiometric composition,

wherein a released amount of oxygen atoms from the oxide film in thermal desorption spectroscopy analysis is greater than or equal to 1.0×

10¹⁸ atoms/cm³, and

wherein a surface temperature of the oxide film in the thermal desorption spectroscopy is higher than or equal to 100°

C. and lower than or equal to 700°

C.

6. A semiconductor device comprising:

a transistor comprising;

a first insulating film over a substrate;

a first oxide insulating film over the first insulating film;

an oxide semiconductor film over and in contact with the first oxide insulating film;

source and drain electrodes in contact with the oxide semiconductor film;

a second oxide insulating film over and in contact with the oxide semiconductor film; and

a second insulating film over the second oxide insulating film;

a pixel electrode over the second insulating film; and

a capacitor comprising;

a film having conductivity over the first oxide insulating film;

the second insulating film over and in contact with the film having conductivity; and

the pixel electrode,

wherein the first insulating film and the second insulating film are in physical contact with each other, and

wherein the pixel electrode is in contact with one of the source and drain electrodes in an opening in the second insulating film.

7. The semiconductor device according to claim 6,

wherein the film having conductivity is a metal oxide film including a metal element contained in the oxide semiconductor film and an impurity.

8. The semiconductor device according to claim 7, wherein the impurity is hydrogen.

9. The semiconductor device according to claim 6, further comprising a gate electrode over the second insulating film,

wherein the gate electrode and the pixel electrode include a same material.

10. The semiconductor device according to claim 9, wherein a side surface of the oxide semiconductor film faces the gate electrode with the second oxide insulating film and the second insulating film provided therebetween.

11. The semiconductor device according to claim 6, wherein each of the first insulating film and the second insulating film is one selected from a silicon nitride film, a silicon nitride oxide film, an aluminum nitride film, an aluminum nitride oxide film, an aluminum oxide film, an aluminum oxynitride film, a gallium oxide film, a gallium oxynitride film, an yttrium oxide film, an yttrium oxynitride film, a hafnium oxide film, and a hafnium oxynitride film.

12. The semiconductor device according to claim 6,

wherein the second oxide insulating film includes an oxide film containing more oxygen than that in a stoichiometric composition,

wherein a released amount of oxygen atoms from the oxide film in thermal desorption spectroscopy analysis is greater than or equal to 1.0×

10¹⁸ atoms/cm³, and

wherein a surface temperature of the oxide film in the thermal desorption spectroscopy is higher than or equal to 100°

C. and lower than or equal to 700°

C.

13. A semiconductor device comprising:

a transistor comprising;

a first gate electrode over a substrate;

a first insulating film over the first gate electrode;

a first oxide insulating film over the first insulating film;

an oxide semiconductor film over and in contact with the first oxide insulating film;

source and drain electrodes in contact with the oxide semiconductor film;

a second oxide insulating film over and in contact with the oxide semiconductor film;

a second insulating film over the second oxide insulating film; and

a second gate electrode over the second insulating film;

a pixel electrode over the second insulating film; and

a capacitor comprising;

a film having conductivity over the first oxide insulating film;

the second insulating film over and in contact with the film having conductivity; and

the pixel electrode,

wherein the first insulating film and the second insulating film are in physical contact with each other,

wherein the first gate electrode and the second gate electrode overlap each other with the oxide semiconductor film provided therebetween, and

wherein the pixel electrode is in contact with one of the source and drain electrodes in a first opening in the second insulating film.

14. The semiconductor device according to claim 13, wherein the first gate electrode and the second gate electrode are in contact with each other in a second opening in the first insulating film and the second insulating film.

15. The semiconductor device according to claim 13,

wherein the film having conductivity is a metal oxide film including a metal element contained in the oxide semiconductor film and an impurity.

16. The semiconductor device according to claim 15, wherein the impurity is hydrogen.

17. The semiconductor device according to claim 13, wherein the second gate electrode and the pixel electrode include a same material.

18. The semiconductor device according to claim 13, wherein a side surface of the oxide semiconductor film faces the second gate electrode with the second oxide insulating film and the second insulating film provided therebetween.

19. The semiconductor device according to claim 13, wherein each of the first insulating film and the second insulating film is one selected from a silicon nitride film, a silicon nitride oxide film, an aluminum nitride film, an aluminum nitride oxide film, an aluminum oxide film, an aluminum oxynitride film, a gallium oxide film, a gallium oxynitride film, an yttrium oxide film, an yttrium oxynitride film, a hafnium oxide film, and a hafnium oxynitride film.

20. The semiconductor device according to claim 13,

wherein the second oxide insulating film includes an oxide film containing more oxygen than that in a stoichiometric composition,

wherein a released amount of oxygen atoms from the oxide film in thermal desorption spectroscopy analysis is greater than or equal to 1.0×

10¹⁸ atoms/cm³, and

wherein a surface temperature of the oxide film in the thermal desorption spectroscopy is higher than or equal to 100°

C. and lower than or equal to 700°

C.